HITACHI 2SC4196

2SC4196
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4196
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
25
V
Collector to emitter voltage
VCEO
15
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
0.3
µA
VCB = 15 V, IE = 0
I CEO
—
—
10
µA
VCE = 15 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
1.0
µA
VEB = 3 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.3
V
I C = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
50
—
180
Collector output capacitance
Cob
—
0.7
1.0
pF
VCB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product
fT
1.8
2.4
—
GHz
VCE = 5 V, IC = 20 mA
Oscillating output voltage
VOSC
—
200
—
mV
VCC = 5 V, IC = 5 mA,
f = 930 MHz
Note: Marking is “QI–”.
2
VCE = 5 V, IC = 5 mA
2SC4196
DC Current Transfer Ratio vs.
Collector Current
200
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
VCE = 5 V
Pulse
160
120
80
40
0
0
1
100
150
50
Ambient Temperature Ta (°C)
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
4
VCE = 5 V
Pulse
3
2
1
0
10
20
2
5
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1
10
20
2
5
Collector Current IC (mA)
50
1.1
IE = 0
f = 1 MHz
1.0
0.9
0.8
0.7
0.6
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC4196
Oscillating Output Voltage vs.
Collector Current
1,000
f = 930 MHz
500
IC = 8 mA
5
200
3
100
50
20
10
0
4
Oscillating Output Voltage Vosc (mV)
Oscillating Output Voltage Vosc (mV)
Oscillating Output Voltage vs.
Supply Voltage
6
8
2
4
Supply Voltage VCC (V)
10
1,000
500
f = 930 MHz
VCC = 8 V
5
200
100
3
50
20
10
0.5
5
10
1.0
2
Collector Current IC (mA)
20
2SC4196
S Parameters (Emitter Common)
VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP), ZO = 50 Ω
Test condition
IC = 5 mA
IC = 10 mA
S21-Frequency
S11-Frequency
0.8
1
Scale : 4/div
90°
1.5
0.6
60°
120°
2
0.4
3
150°
4
5
0.2
30°
10
0.2
0
0.4
0.6 0.8 1
1.5 2
3 4 5
10
∞
180°
0°
–10
–0.2
–5
–4
–150°
–30°
–3
–0.4
–2
–0.6
–0.8
–60°
–120°
–1.5
–1
–90°
S12-Frequency
90°
S22-Frequency
Scale : 0.04/div
0.8
1
0.6
60°
120°
1.5
2
0.4
3
150°
30°
4
5
0.2
10
180°
0°
0.2
0
0.4 0.6 0.8 1
1.5 2
3 4 5
10
∞
–10
–0.2
–150°
–5
–4
–30°
–3
–0.4
–60°
–120°
–90°
–2
–0.6
–0.8
–1.5
–1
5
2SC4196
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.718
–44.8
12.498
144.9
0.026
68.8
0.895
–14.6
200
0.549
–78.8
9.123
122.0
0.042
59.3
0.756
–20.3
300
0.439
–102.0
6.788
108.4
0.051
57.6
0.671
–21.3
400
0.381
–120.8
5.348
99.3
0.060
58.5
0.626
–21.5
500
0.351
–135.5
4.396
92.4
0.068
60.6
0.600
–21.8
600
0.340
–148.2
3.732
86.7
0.076
62.5
0.582
–22.5
700
0.337
–157.8
3.240
81.7
0.085
64.3
0.569
–23.3
800
0.337
–165.2
2.875
77.3
0.094
66.0
0.558
–24.4
900
0.343
–173.1
2.575
73.4
0.103
67.3
0.547
–25.8
1000
0.359
–177.9
2.355
70.0
0.112
68.4
0.538
–27.2
Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Ω
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.553
–65.2
17.540
133.2
0.022
64.8
0.809
–18.0
200
0.401
–103.4
11.066
111.3
0.033
61.3
0.659
–20.0
300
0.337
–127.4
7.723
99.9
0.043
63.9
0.598
–18.6
400
0.314
–143.9
5.939
92.5
0.052
66.3
0.570
–18.1
500
0.313
–155.7
4.816
86.7
0.063
68.6
0.555
–18.2
600
0.314
–165.5
4.052
81.8
0.073
70.1
0.545
–18.9
700
0.327
–172.2
3.496
77.6
0.083
71.4
0.536
–19.9
800
0.335
–177.7
3.090
73.8
0.093
72.4
0.530
–21.0
900
0.349
176.8
2.753
70.1
0.103
73.0
0.523
–22.4
1000
0.354
172.8
2.515
67.0
0.113
74.0
0.516
–24.0
6
S21
S12
S22
2SC4196
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
3.035
5.491
152.256
–40.168
–0.005
–0.334
0.048
0.613
200
6.463
10.003
131.145
–71.318
–0.015
–0.679
0.100
1.238
300
10.768
12.356
103.025
–90.187
–0.036
–1.034
0.191
1.804
400
15.089
13.186
77.334
–98.666
–0.065
–1.397
0.232
2.386
500
18.776
12.837
55.039
–99.977
–0.090
–1.767
0.270
2.947
600
22.098
11.913
37.290
–98.247
–0.128
–2.134
0.347
3.555
700
24.568
10.731
22.802
–93.799
–0.163
–2.515
0.417
4.133
800
26.291
9.416
11.686
–88.266
–0.193
–2.890
0.516
4.703
900
28.112
7.683
2.225
–82.972
–0.260
–3.305
0.614
5.354
1000
29.685
6.751
–3.931
–78.720
–0.291
–3.746
0.629
5.908
Test Condition VCE = 5 V, IC = 10 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
5.903
7.347
243.307
–103.091
–0.008
–0.338
0.026
0.591
200
11.583
10.820
168.225
–150.806
–0.022
–0.682
0.128
1.254
300
16.546
10.993
103.210
–155.623
–0.045
–1.041
0.216
1.797
400
20.055
10.038
61.965
–145.393
–0.074
–1.387
0.320
2.394
500
22.491
8.943
35.421
–131.365
–0.093
–1.766
0.316
2.917
600
24.417
7.556
16.762
–118.513
–0.133
–2.138
0.378
3.544
700
26.086
6.620
5.096
–107.291
–0.155
–2.531
0.424
4.086
800
27.193
5.569
–3.874
–97.359
–0.185
–2.923
0.469
4.659
900
28.543
4.340
–11.095
–88.952
–0.248
–3.349
0.563
5.307
1000
28.955
3.253
–15.953
–81.466
–0.270
–3.737
0.650
5.861
7
2SC4196
VOSC Test Circuit
Vosc Test Circuit
L3
Ferrite
Bead
D.U.T.
VCC
470
9p
L1
1.2 p
330
1n
47 k
L2
2.2 n
Unit R : Ω
C:F
1n
Vosc
Output
VBB
15
10
L1 : φ0.8 mm Enameled Copper Wire.
10
5
15
15
L3 : Inside dia 3 mm, φ0.3 mm Enameled Copper Wire 10 Turns.
8
VT
ISV188
6.8 k
L2 : φ0.8 mm Enameled Copper Wire.
1n
Unit : mm
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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