2SB1025 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1418 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1025 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Collector current IC –1 A –2 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –120 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –80 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –10 µA VCB = –100 V, IE = 0 60 — 320 VCE = –5 V, IC = –150 mA hFE2 30 — — VCE = –5 V, I C = –500 mA (Pulse test) Collector to emitter saturation voltage VCE(sat) — — –1 V I C = –500 mA, I B = –50 mA (Pulse test) Base to emitter voltage VBE — — –0.9 V VCE = –5 V, IC = –150 mA Gain bandwidth product fT — 140 — MHz VCE = –5 V, IC = –150 mA Collector output capacitance Cob — 20 — pF VCB = –10 V, IE = 0, f = 1 MHz DC current transfer ratio Note: hFE1* 1 1. The 2SB1025 is grouped by hFE1 as follows. Mark DH DJ DK hFE1 60 to 120 100 to 200 160 to 320 2 2SB1025 Typical Output Characteristics Maximum Collector Dissipation Curve –1.0 Collector Current IC (A) Collector Power Dissipation Pc (W) (on the alumina ceramic board) 1.2 0.8 0.4 –0.8 –0.6 –0.4 –40 –30 0 –2 –10 5 – –2 –1 –0.5 mA –0.2 IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) 600 –200 75°C –100 Ta = –50 –20 25 –25 –10 –5 –2 –1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE –500 VCE = –5 V Pulse –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics Collector Current IC (mA) 0 –12 0 0 1 – –80 –60 500 VCE = –5 V Pulse 400 300 200 Ta = 75°C 25 –25 100 0 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) 3 2SB1025 –0.5 –0.4 –0.3 –0.2 –0.1 Base to Emitter Saturation Voltage VBE (sat) (V) Collector to Emitter Saturation Voltage VCE (sat) (V) Saturation Voltage vs. Collector Current –1.2 –0.6 IC = 10 IB Pulse –1.0 VBE (sat) –0.8 –0.6 Ta = 25 75 –0.2 VCE (sat) 0 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) 4 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current VCE = –5 V 300 200 100 –10 –30 –100 –300 Collector Current IC (mA) C Ta = 75°C 25 –25 –0.4 0 –25° –1,000 200 100 f = 1 MHz IE = 0 50 20 10 5 2 –1 –2 –5 –10 –20 –50 –100 Collector to Base Voltage VCB (V) Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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