HITACHI 2SC4994

2SC4994
Silicon NPN Epitaxial
ADE-208-012
1st. Edition
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10.5 GHz Typ
• High gain, low noise figure
PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
CMPAK–4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4994
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
20
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I CBO
—
—
10
µA
VCB = 15 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
0.4
0.75
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
7.5
10.5
—
GHz
VCE = 5 V, IC = 10 mA
Power gain
PG
14.0
17.0
—
dB
VCE = 5 V, IC = 10 mA,
f = 900 MHz
Noise figure
NF
—
1.2
2.5
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
VCE = 5 V, IC = 10 mA
Note: Marking is “YS–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC4994
100
160
80
VCE = 5V
120
60
40
20
0
200
DC Current Transfer Ratio h FE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
120
DC Current Transfer Ratio vs.
Collector Current
80
40
0
0.1 0.2
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product
10
8
VCE = 1 V
4
2
0
50
Collector Output Capacitance Cob (pF)
f T (GHz)
VCE = 5 V
2
5
10
20
Collector Current I C (mA)
2
5
10 20
50
Collector Output Capacitance vs.
Collector to Base Voltage
12
1
0.5 1
Collector Current I C (mA)
Gain Bandwidth Product vs.
Collector Current
6
VCE = 1V
0.52
IE = 0
0.48
f = 1 MHz
0.44
0.40
0.36
0.32
1
2
5
10
20
0.5
Collector to Base Voltage VCB (V)
3
2SC4994
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
5
VCE = 5V
VCE = 1V
12
8
4
0
0.3
4
3
2
1
1
3
10
Collector Current I C (mA)
4
f = 900 MHz
16
Noise Figure NF (dB)
Power Gain PG (dB)
f = 900 MHz
30
0
0.3
VCE = 5V
VCE = 1V
1
3
10
Collector Current I C (mA)
30
2SC4994
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
Scale: 4 / div.
90°
1.5
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
S22 Parameter vs. Frequency
S12 Parameter vs. Frequency
90°
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
5
2SC4994
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
Scale: 2 / div.
90°
1.5
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 1 mA)
(I C = 2 mA)
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 1 mA)
(I C = 2 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.05 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 1 mA)
(I C = 2 mA)
6
–2
–.6
–.8
–1
–1.5
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 1 mA)
(I C = 2 mA)
2SC4994
S Parameters (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.794
–33.7
12.47
155.5
0.0338
71.9
0.919
–20.5
400
0.689
–62.1
10.61
136.9
0.0569
58.9
0.786
–34.9
600
0.586
–84.6
8.73
123.2
0.0706
51.5
0.659
–44.4
800
0.511
–103.0
7.31
113.0
0.0795
47.5
0.558
–51.4
1000
0.457
–119.6
6.16
105.0
0.0867
45.6
0.486
–55.8
1200
0.430
–133.7
5.33
98.6
0.0918
44.9
0.432
–59.2
1400
0.401
–146.8
4.67
93.7
0.0975
44.9
0.395
–62.0
1600
0.400
–158.5
4.16
88.9
0.103
45.3
0.364
–64.5
1800
0.394
–167.9
3.77
84.4
0.108
46.0
0.340
–67.0
2000
0.397
–176.9
3.42
80.6
0.113
46.8
0.321
–69.4
S Parameters (VCE = 5 V, IC = 10 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.659
–50.5
18.28
146.8
0.0297
66.3
0.850
–27.1
400
0.547
–88.0
13.90
126.0
0.0456
55.4
0.658
–42.4
600
0.478
–113.4
10.66
113.0
0.0549
51.0
0.519
–50.7
800
0.441
–132.4
8.53
104.3
0.0611
50.2
0.430
–54.9
1000
0.419
–148.9
7.00
97.5
0.0680
50.5
0.370
–57.3
1200
0.420
–160.3
5.96
91.9
0.0735
51.9
0.330
–58.9
1400
0.404
–171.6
5.17
87.8
0.0804
53.6
0.303
–60.7
1600
0.413
–179.3
4.59
83.3
0.0875
54.9
0.282
–62.3
1800
0.426
172.2
4.13
80.1
0.0942
56.3
0.266
–64.4
2000
0.431
165.2
3.73
76.8
0.101
56.9
0.252
–66.7
7
2SC4994
S Parameters (VCE = 1 V, IC = 1 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.939
–17.2
3.35
165.1
0.0525
78.0
0.978
–11.8
400
0.895
–33.7
3.25
151.8
0.0977
67.7
0.933
–22.5
600
0.834
–47.9
2.79
139.8
134
58.4
0.873
–32.0
800
0.761
–61.5
2.77
128.9
0.163
50.6
0.805
–40.8
1000
0.693
–74.3
2.51
119.0
0.185
44.4
0.743
–48.0
1200
0.642
–86.5
2.30
110.5
0.200
38.9
0.687
–54.4
1400
0.582
–97.0
2.08
103.9
0.212
34.7
0.644
–59.5
1600
0.544
–107.2
1.93
97.2
0.220
31.2
0.602
–64.1
1800
0.507
–117.4
1.79
91.0
0.227
28.1
0.568
–68.8
2000
0.489
–127.2
1.66
85.7
0.230
25.0
0.538
–73.5
S Parameters (VCE = 1 V, IC = 2 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.889
–24.3
6.20
161.2
0.0508
74.6
0.955
–17.2
400
0.814
–46.0
5.69
145.2
0.0906
62.5
0.871
–31.4
600
0.724
–65.4
4.99
131.7
0.119
52.7
0.773
–42.8
800
0.646
–81.9
4.42
120.8
0.138
45.2
0.678
–52.7
1000
0.572
–97.0
3.85
111.7
0.151
40.4
0.604
–59.2
1200
0.531
–110.2
3.42
104.0
0.160
36.7
0.540
–65.3
1400
0.484
–123.1
3.04
98.2
0.167
34.1
0.494
–70.6
1600
0.463
–134.4
2.75
92.3
0.173
32.2
0.454
–74.9
1800
0.441
–144.5
2.51
87.2
0.177
30.3
0.423
–79.3
2000
0.434
–154.7
2.30
82.6
0.180
29.1
0.396
–83.4
8
S21
S12
S22
Unit: mm
0.1
0.3 +– 0.05
0.2
0.65 0.6
1.25 ± 0.2
0.9 ± 0.1
0.1
0.4 +– 0.05
0 – 0.1
0.425
0.1
0.3 +– 0.05
+ 0.1
0.16– 0.06
2.1 ± 0.3
0.65 0.65
1.25 ± 0.1
0.1
0.3 +– 0.05
0.425
2.0 ± 0.2
1.3 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CMPAK-4(T)
—
Conforms
0.006 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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URL
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: http://www.hitachi.co.jp/Sicd/indx.htm
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