2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “YH-”. 1. Emitter 2. Base 3. Collector 2SC5554 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9 V Emitter to base voltage VEBO 1.5 V Collector current IC 20 mA Collector power dissipation Pc 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector cutoff current I CBO — — 10 µA VCB = 15V , IE = 0 Collector cutoff current I CEO — — 1 mA VCE = 9V , RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 1.5V , IC = 0 DC current transfer ratio hFE 50 120 250 V VCE = 1V , IC = 5mA Collector output capacitance Cob — 0.6 0.9 pF VCB = 1V , IE = 0 f = 1MHz Gain bandwidth product fT 3.5 7 — GHz VCE = 1V , IC = 5mA Power gain PG 9 12 — dB VCE = 1V, IC = 5mA f = 900MHz Noise figure NF — 1.4 3 dB VCE = 1V, IC = 5mA f = 900MHz 2 2SC5554 DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio h FE 160 120 80 40 (pF) 100 0 50 0 Collector Output Capacitance Cob VCE = 1 V 1.0 100 150 200 2 5 10 20 50 Ambient Temperature Ta (°C) Collector Current I C (mA) Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 10 IE = 0 f = 1MHz 0.8 0.6 0.4 0.2 0 0.1 1 Gain Bandwidth Product f T (GHz) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 0.2 0.5 1 2 5 Collector to Base Voltage V CB (V) 10 100 VCE = 1 V 8 6 4 2 0 1 2 5 10 20 50 100 Collector Current I C (mA) 3 2SC5554 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 1 V f = 900MHz 12 8 4 0 1 5 10 20 50 100 2 1 VCE = 1 V 16 f = 1GHz 12 8 4 0 1 2 5 10 20 50 Collector Current I C (mA) 1 2 5 10 20 50 Collector Current I C (mA) S21 Parameter vs. Collector Current 20 S21 parameter |S 21| 2 (dB) 3 0 2 Collector Current I C (mA) 4 f = 900MHz 4 Noise Figure NF (dB) 16 Power Gain PG (dB) VCE = 1 V 100 100 2SC5554 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 4 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Condition : V CE = 1 V , I C = 5mA Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.04 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° –2 –.6 –.8 –1 –1.5 Condition : V CE = 1 V , I C = 5mA Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) 5 2SC5554 Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω) S11 f (MHz) MAG S21 ANG S12 S22 MAG ANG MAG ANG MAG ANG 100 0.715 –25.4 13.06 161.3 0.0279 76.6 0.947 –16.1 200 0.647 –50.1 11.47 144.2 0.0517 65.6 0.828 –30.2 300 0.559 –71.5 9.74 131.0 0.0681 58.4 0.697 –40.4 400 0.501 –88.2 8.28 121.3 0.0798 54.6 0.587 –47.0 500 0.453 –102.5 7.08 113.7 0.0882 52.4 0.501 –51.3 600 0.416 –114.8 6.16 108.1 0.0955 51.8 0.433 –54.3 700 0.393 –125.4 5.43 103.1 0.102 51.7 0.378 –56.2 800 0.378 –134.4 4.84 99.3 0.109 52.1 0.333 –57.3 900 0.369 –142.8 4.37 95.7 0.115 52.7 0.295 –58.0 1000 0.357 –149.5 3.99 92.5 0.122 53.5 0.266 –58.4 1100 0.361 –156.6 3.66 89.7 0.128 54.2 0.240 –58.6 1200 0.358 –162.2 3.38 87.2 0.135 55.1 0.217 –58.5 1300 0.358 –167.5 3.15 84.9 0.141 56.0 0.199 –58.0 1400 0.362 –172.5 2.96 82.7 0.148 56.9 0.180 –58.0 1500 0.362 –177.3 2.78 80.9 0.155 57.2 0.166 –57.2 1600 0.369 178.8 2.64 78.6 0.163 58.1 0.151 –56.9 1700 0.373 174.7 2.50 77.2 0.169 58.8 0.137 –56.6 1800 0.377 171.1 2.38 75.1 0.177 59.2 0.126 –56.4 1900 0.388 168.3 2.28 73.3 0.183 59.6 0.113 –56.2 2000 0.395 165.3 2.18 71.8 0.191 60.1 0.102 –55.7 6 2SC5554 Package Dimensions As of January, 2001 0.15 +0.1 –0.05 (0.1) 3-0.2 +0.1 -0.05 0.45 0.45 (0.1) 0.2 0.8 ± 0.1 1.4 ± 0.05 0.9 ± 0.1 0.6 MAX 1.2 ± 0.05 0.2 Unit: mm Hitachi Code JEDEC EIAJ Mass (reference value) MFPAK — — 0.0016 g 7 2SC5554 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8