2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO–3P•FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 6 V Collector current IC 15 A Collector peak current IC(peak) 30 A 50 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. TC = 25°C Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 800 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 mA, IC = 0 Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 DC current transfer ratio hFE1 8 — 35 VCE = 5 V, IC = 1 A DC current transfer ratio hFE2 3 — 6 VCE = 5 V, IC = 8 A Collector to emitter saturation voltage VCE(sat) — — 5 V IC = 10 A, IB = 3 A Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 10 A, IB = 3 A Fall time tf — 0.15 0.3 µsec ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz 2 Symbol 2SC5252 Collector Power Dissipation Pc (W) Collector Power Dissipation vs. Case Temperature 80 60 40 20 0 50 100 Case Temperature 150 Tc (°C) 200 Areaof Safe Operaion I C (A) 40 Collector Current 50 30 (400 V, 30 A) I B1 = –1 A L = 180 µH duty < 1 % Tc = 25°C 20 10 (600 V, 8 A) (800 V, 4 A) (1500 V, 0.5 mA) 0 400 800 1200 1600 2000 Collector to Emitter Voltage VCE (V) 3 2SC5252 Typical Output Characteristics 10 Tc = 25 °C Pulse Test Collector Current I C (A) 2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 5 0.4 A 0.2 A IB = 0 0 5 10 Collector to Emitter Voltage V CE (V) DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio h FE 100 50 75°C 25°C 20 10 5 2 Tc = –25°C V CE = 5 V Pulse Test 1 0.1 0.2 0.5 1 2 5 10 Collector Current I C (A) 4 20 2SC5252 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 IC / I B = 3 Pulse Test 2 1 75 °C 0.5 25 °C 0.2 0.1 0.05 0.1 0.2 Tc = –25 °C 0.5 1 2 5 10 20 Collector Current I C (A) Base to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage V BE(sat) (V) 10 IC / I B = 3 Pulse Test 5 2 Tc = –25 °C 25 °C 1 0.5 75 °C 0.2 0.1 0.1 0.2 0.5 1 2 5 10 Collector Current I C (A) 20 5 2SC5252 Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Base Current 10 Tc = 25°C Pulse Test 8 6 IC = 6 A 8A 4 10 A 12 A 2 0 0.1 1.0 0.2 0.5 1 Base Current 10 Fall Time vs. Base Current Icp = 7 A f H = 31.5 kHz Tc = 25°C 0.8 Fall Time t f (µs) 2 5 I B (A) 0.6 0.4 0.2 0 0.8 1.6 2.4 3.2 Base Current I B1 (A) 6 4.0 2SC5252 When using this document, keep the following in mind: 1. 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