2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –1.0 A Collector peak current iC(peak) –1.5 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –25 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –20 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –1.0 µA VCB = –20 V, IE = 0 85 — 240 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — –0.2 –0.5 V I C = –0.8 A, I B = –0.08 A (Pulse test) Base to emitter voltage VBE — –0.8 –1.0 V VCE = –2 V, I C = –0.5 A (Pulse test) Gain bandwidth product fT — 350 — MHz VCE = –2 V, I C = –0.5 A (Pulse test) Collector output capacitance Cob — 38 — pF VCB = –10 V, IE = 0 f = 1 MHz Note: 1. The 2SB562 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = –2 V, I C = –0.5 A (Pulse test) 2SB562 Typical Output Characteristics Maximum Collector Dissipation Curve –1,000 Collector Current IC (mA) –4 –3 –400 –2 –200 –1 mA IB = 0 0 0 100 150 50 Ambient Temperature Ta (°C) 3,000 VCE = –2 V –100 –30 Ta = 75°C 25°C –10 –3 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE –300 –1 –0.4 –0.8 –1.2 –1.6 –2.0 Collector Emitter Voltage VCE (V) DC Current Transfer Ratio vs.Collector Current Typical Transfer Characteristics –1,000 Collector Current IC (mA) –5 W –600 9 0. 0.4 –8 –7 –6 = 0.8 –800 PC Collector Power Dissipation PC (W) 1.2 VCE = –2 V Pulse 1,000 300 Ta = 75°C 100 25°C 30 10 –1 –3 –10 –30 –100 –300 Collector Current IC (mA) –1,000 3 –0.20 IC = 10 IB Pulse test –0.15 Ta = 75°C –0.10 25°C –0.05 0 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) –1.0 –0.8 –0.6 –0.2 0 –1 –3 –10 –30 Base Current IB (mA) Collector Output Capacitance Cob (pF) 4 300 f = 1 MHz IE = 0 50 30 10 –1 Pulse test –0.4 Collector Output Capacitance vs. Collector to Base Voltage 100 –800 mA –0.25 Collector to Emitter Saturation Voltage vs. Base Current IC = –500 mA Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SB562 –3 –10 –30 Collector to Base Voltage VCB (V) –100 Unit: mm 4.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.5 ± 0.1 10.1 Min 2.3 Max 8.0 ± 0.5 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. 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