HITACHI 2SD768

2SD768(K)
Silicon NPN Epitaxial
Application
Medium speed and power switching complementary pair with 2SB727(K)
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
3 kΩ
(Typ)
200 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
6
A
Collector peak current
I C(peak)
10
A
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SD768(K)
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
I C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CBO
—
—
100
µA
VCB = 120 V, IE = 0
I CEO
—
—
10
µA
VCE = 100 V, RBE=∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
VCE(sat)1
—
—
1.5
V
I C = 3 A, IB = 6 mA*1
voltage
VCE(sat)2
—
—
3
V
I C = 6A, IB = 60 mA*1
Base to emitter saturation
VBE(sat)1
—
—
2
V
I C = 3 A, IB = 6 mA*1
voltage
VBE(sat)2
—
—
3.5
V
I C = 6 A, IB = 60 mA*1
Turn on time
t on
—
1.0
—
µs
I C = 3 A, IB1 = –IB2 = 6 mA
Turn off time
t off
—
3.0
—
µs
I C = 3 A, IB1 = –IB2 = 6 mA
Note:
Symbol
VCE = 3 V, IC = 3 A*1
1. Pulse test.
Maximum Collector Dissipation
Curve
Area of Safe Operation
0µ
s
IC(max)
5°C
s
=2
1 m 0 ms
C
n(T
tio
=1
1.0
era
Op
20
3
10
40
1 µs
iC(peak)
10
PW
Collector current IC (A)
30
DC
Collector power dissipation PC (W)
60
0.3
Ta = 25°C
1 shot pulse
0.1
)
0.03
0
2
50
100
Case temperature TC (°C)
150
1
3
10
30
100 300 1,000
Collector to emitter voltage VCE (V)
2SD768(K)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
10,000
10
DC current transfer ratio hFE
Collector current IC (A)
TC = 25°C
8
6
1.2
1.0
0.8
0.6
4
0.4
2
3,000
Ta
=
°C
75
25
1,000
°C
C
5°
–2
VCE = 3 V
Pulse
300
0.2 mA
IB = 0
0
100
0.1
1
2
3
4
5
Collector to emitter voltage VCE (V)
Switching Time vs. Collector Current
3
TC = 25°C
3
IC/IB = 200
500
00
5
=
I C/I B
200
VBE(sat)
1.0
10
10
10
Switching time t (µs)
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter sauration voltage VBE(sat) (V)
Saturation Voltage
vs. Collector Current
0.3
1.0
3
Collector current IC (A)
VCE(sat)
0.3
1.0
0.3
0.1
tstg
ton
tf
VCC = 30V
IC = 500 IB1 = –500 IB2
Ta = 25°C
0.03
0.1
0.1
1.0
3
0.3
Collector current IC (A)
10
0.01
0.1
3
0.3
1.0
Collector current IC (A)
10
3
2SD768(K)
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
10
1 to 1,000 s
3
1 to 1,000 ms
1.0
0.3
TC = 25°C
0.1
0.03
0.01
1
10
1
10
Time t
4
100
1,000 (s)
100
1,000 (ms)
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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