HITACHI 2SD970K

2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
2 kΩ
(Typ)
200 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
8
A
Collector peak current
I C(peak)
12
A
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SD970(K)
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
I C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CBO
—
—
100
µA
VCB = 120 V, IE = 0
I CEO
—
—
10
µA
VCE = 100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
VCE(sat)1
—
—
1.5
V
I C = 4 A, IB = 8 mA*1
voltage
VCE(sat)2
—
—
3.0
V
I C = 8 A, IB = 80 mA*1
Base to emitter saturation
VBE(sat)1
—
—
2.0
V
I C = 4 A, IB = 8 mA*1
voltage
VBE(sat)2
—
—
3.5
V
I C = 8 A, IB = 80 mA*1
Turn on time
t on
—
0.4
—
µs
I C = 4 A, IB1 = –IB2 = 8 mA
Storage time
t stg
—
5.4
—
µs
Fall time
tf
—
1.1
—
µs
Note:
Symbol
VCE = 3 V, IC = 4 A*1
1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
30
s
1m
s
Op
tio
era
0.3
TC
n(
0.1
1
C)
Ta = 25°C
1 shot pulse
5°
=2
Collector current IC (A)
0µ
s
DC
150
10
m
1.0
0.03
50
100
Case temperature TC (°C)
10
20
3
IC max
(Continuous)
=
40
0
2
1 µs
iC (peak)
10
PW
Collector power dissipation Pc (W)
60
3
10
30
100 300 1,000
Collector to emitter voltage VCE (V)
2SD970(K)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
2.0
W
Collector current IC (A)
25
1.6
1.4
=
1.8
8
10,000
PC
TC = 25°C
DC current transfer ratio hFE
10
6
.6 mA
0
4
0.8
1.2 1.0
2
IB = 0
TC
1,000
=
°C
75
°C °C
25 –25
VCE = 3 V
300
100
0.1
1
2
3
4
5
Collector to emitter voltage VCE (V)
Saturation Voltage vs. Collector Current
0.3
1.0
3
Collector current IC (A)
10
Switching Time vs. Collector Current
10
10
tstg
5
3
lC/lB = 200
500
2
VBE (sat)
1.0
0.5
VCE (sat)
lC/lB = 500
200
1.0
TC = 25°C
0.2
0.5 1.0
2
5
Collector current IC (A)
10
tf
ton
0.3
0.1
0.03
0.2
0.1
0.1
Switching time t (µs)
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
0
3,000
0.01
0.1
Ta = 25°C
VCC = 30 V
IC = 500 IB1 = –500 IB2
0.3
1.0
3
Collector current IC (A)
10
3
2SD970(K)
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
10
1 to 1,000 s
3
1 to 1,000 ms
1.0
0.3
0.1
TC = 25°C
0.03
0.01
1
10
1
10
Time t
4
100
1,000 (s)
100
1,000 (ms)
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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