2SD970(K) Silicon NPN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Collector peak current I C(peak) 12 A 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SD970(K) Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 50 mA, IC = 0 Collector cutoff current I CBO — — 100 µA VCB = 120 V, IE = 0 I CEO — — 10 µA VCE = 100 V, RBE = ∞ DC current transfer ratio hFE 1000 — 20000 Collector to emitter saturation VCE(sat)1 — — 1.5 V I C = 4 A, IB = 8 mA*1 voltage VCE(sat)2 — — 3.0 V I C = 8 A, IB = 80 mA*1 Base to emitter saturation VBE(sat)1 — — 2.0 V I C = 4 A, IB = 8 mA*1 voltage VBE(sat)2 — — 3.5 V I C = 8 A, IB = 80 mA*1 Turn on time t on — 0.4 — µs I C = 4 A, IB1 = –IB2 = 8 mA Storage time t stg — 5.4 — µs Fall time tf — 1.1 — µs Note: Symbol VCE = 3 V, IC = 4 A*1 1. Pulse test. Maximum Collector Dissipation Curve Area of Safe Operation 30 s 1m s Op tio era 0.3 TC n( 0.1 1 C) Ta = 25°C 1 shot pulse 5° =2 Collector current IC (A) 0µ s DC 150 10 m 1.0 0.03 50 100 Case temperature TC (°C) 10 20 3 IC max (Continuous) = 40 0 2 1 µs iC (peak) 10 PW Collector power dissipation Pc (W) 60 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) 2SD970(K) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 2.0 W Collector current IC (A) 25 1.6 1.4 = 1.8 8 10,000 PC TC = 25°C DC current transfer ratio hFE 10 6 .6 mA 0 4 0.8 1.2 1.0 2 IB = 0 TC 1,000 = °C 75 °C °C 25 –25 VCE = 3 V 300 100 0.1 1 2 3 4 5 Collector to emitter voltage VCE (V) Saturation Voltage vs. Collector Current 0.3 1.0 3 Collector current IC (A) 10 Switching Time vs. Collector Current 10 10 tstg 5 3 lC/lB = 200 500 2 VBE (sat) 1.0 0.5 VCE (sat) lC/lB = 500 200 1.0 TC = 25°C 0.2 0.5 1.0 2 5 Collector current IC (A) 10 tf ton 0.3 0.1 0.03 0.2 0.1 0.1 Switching time t (µs) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 0 3,000 0.01 0.1 Ta = 25°C VCC = 30 V IC = 500 IB1 = –500 IB2 0.3 1.0 3 Collector current IC (A) 10 3 2SD970(K) Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 1 to 1,000 s 3 1 to 1,000 ms 1.0 0.3 0.1 TC = 25°C 0.03 0.01 1 10 1 10 Time t 4 100 1,000 (s) 100 1,000 (ms) Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.