HITACHI 2SD1470

2SD1470
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
3
2SD1470
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1
A
2
A
1
W
Collector peak current
iC(peak)*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
60
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
60
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 60 V, IE = 0
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 7 V, IC = 0
DC current transfer ratio
hFE
2000
—
100000
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 500 mA, IB = 0.5 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 500 mA, IB = 0.5 mA*1
Notes: 1. Pulse test
2. Marking is “AT”.
2
VCE = 3 V, IC = 0.5 A*1
2SD1470
Maximum Collector Dissipation
Curve
Area of Safe Operation
10
µs
0.4
1
0.8
iC(peak)
1.0
µs
0 s
s
10 m
m
1
10
=
Collector Current IC (A)
3
PW
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
1.2
0.3
Ta = 25°C
1Shot Pulse
0.1
0.03
0.01
0
3
50
100
150
Ambient Temperature Ta (°C)
10
30
100
1,000
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
0.5
Collector Current IC (A)
0.2
0.1
W
0.3
=1
0.4
PC
Ta = 25°C
20
18
16
14
12
10
8
6
4
2 µA
IB = 0
0
1
2
3
4
5
Collectot to Emitter Voltage VCE (V)
DC Current Transfer Ratio hFE (×103)
Typical Output Characteristics
300
100
Ta = 75°C
25
–25
30
10
3
10
VCE = 3 V
Pulse
30
100
300
Collector Current IC (mA)
1,000
3
2SD1470
Collector to Emitter Saturation Voltage VCE(sat) (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
Saturation Voltage vs.
Collector Curret
10
3
VBE(sat)
1.0
VCE(sat)
0.3
Ta = 25°C
IC/IB = 1,000
0.1
10
30
100
300
Collector Current IC (mA)
1,000
Transient Thermal Resistance
Thermal Resistance θj-a (°C/W)
300
100
30
10
3
1.0
0.3
1m
4
Ta = 25°C
On the alumina ceramic board(12.5 × 30 × 0.7 mm)
10 m
100 m
1
Time t (s)
10
100
1,000
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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