2SD1470 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1470 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A 2 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 60 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 60 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 60 V, IE = 0 Emitter cutoff current I EBO — — 10 µA VEB = 7 V, IC = 0 DC current transfer ratio hFE 2000 — 100000 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 500 mA, IB = 0.5 mA*1 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 500 mA, IB = 0.5 mA*1 Notes: 1. Pulse test 2. Marking is “AT”. 2 VCE = 3 V, IC = 0.5 A*1 2SD1470 Maximum Collector Dissipation Curve Area of Safe Operation 10 µs 0.4 1 0.8 iC(peak) 1.0 µs 0 s s 10 m m 1 10 = Collector Current IC (A) 3 PW Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 0.3 Ta = 25°C 1Shot Pulse 0.1 0.03 0.01 0 3 50 100 150 Ambient Temperature Ta (°C) 10 30 100 1,000 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 0.5 Collector Current IC (A) 0.2 0.1 W 0.3 =1 0.4 PC Ta = 25°C 20 18 16 14 12 10 8 6 4 2 µA IB = 0 0 1 2 3 4 5 Collectot to Emitter Voltage VCE (V) DC Current Transfer Ratio hFE (×103) Typical Output Characteristics 300 100 Ta = 75°C 25 –25 30 10 3 10 VCE = 3 V Pulse 30 100 300 Collector Current IC (mA) 1,000 3 2SD1470 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Curret 10 3 VBE(sat) 1.0 VCE(sat) 0.3 Ta = 25°C IC/IB = 1,000 0.1 10 30 100 300 Collector Current IC (mA) 1,000 Transient Thermal Resistance Thermal Resistance θj-a (°C/W) 300 100 30 10 3 1.0 0.3 1m 4 Ta = 25°C On the alumina ceramic board(12.5 × 30 × 0.7 mm) 10 m 100 m 1 Time t (s) 10 100 1,000 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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