HITACHI 2SA1194

2SA1194(K)
Silicon PNP Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
2
3
1
1. Emitter
2. Collector
3. Base
2
3
1
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–60
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–1
A
Collector peak current
I C(peak)
–2
A
Collector power dissipation
PC
1
W
8
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C
2SA1194(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
–60
—
—
V
I C = –1 mA, RBE = ∞
Collector cutoff current
I CBO
—
—
–1.0
µA
VCB = –60 V, IE = 0
Emitter cutoff current
I EBO
—
—
–1.0
µA
VEB = –7 V, IC = 0
DC current transfer ratio
hFE
1000
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
–2.0
V
Base to emitter saturation
voltage
VBE(sat)
—
—
–2.0
V
Turn on time
t on
—
0.7
—
µs
I C = –500 mA
Turn off time
t off
—
0.8
—
µs
I B1 = –IB2 = –1 mA
Note:
VCE = –3 V, IC = –500 mA*1
1. Pulse test
Maximum Collector Dissipation Curve
Area of Safe Operation
–1.0
)
D
(T C O
C = pe
25 rat
°C ion
)
hot
–0.3
IC (max) PW = 10 ms (1 Shot)
(1 S
4
–3 iC (peak)
ms
8
=1
Collector Current IC (A)
–10
PW
Collector power dissipation Pc (W)
12
–0.1
–0.03
0
2
I C = –500 mA, IB = –1 mA*1
50
100
Case Temperature TC (°C)
150
Ta = 25°C
–0.01
–0.1 –0.3 –1.0
–3
–10 –30 –100
Collector to emitter Voltage VCE (V)
2SA1194(K)
–800
100,000
DC current transfer ratio hFE
–1,000
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
P
c =
.0 –0.8
8W
–1
6
.
0
TC = 25°C
–
4
–0.
–0.2
–0.1 –0.08
–0.06
.0
–0 4
–600
–400
–0.02
–200
–0.01 mA
30,000
Ta = 75°C
10,000
25°C
3,000
1,000
IB = 0
–0.01
0
VCE = –3 V
Pulse
300
100
–10
–2
–4
–6
–8
–10
Collector to emitter Voltage VCE (V)
–1,000
Switching Time vs. Collector Current
Saturation Voltage vs. Collector Current
10
–10
lC = 500 lB
Pulse
3
Switching time t (µs)
Collector to emitter saturation voltage
VCE (sat) (V)
Base to emitter saturation voltage
VBE (sat) (V)
–30
–100
–300
Collector current IC (mA)
–3
VBE (sat)
Ta = 25°C
–1.0
VCE (sat)
75°C
–0.3
tstg
0.3
ton
0.1
td
0.03
–0.1
–10
–30
–100
–300
Collector current IC (mA)
–1,000
toff
1.0
IC = 500 IB
Ta = 25°C
0.01
–10
–30
–100
–300
Collector current IC (mA)
–1,000
Switching Time Test Circuit
IC
VIN
R1
tr, tf ≤ 10ns
VIN
PW ≥ 10µs
duty ratio ≤ 10%
Response Waveform
0
lB1
lB2
D.U.T.
RL
R2 0.002 µ 0.002 µ
+
50
VBB
6V
–
50 µ
+
10%
Input
–10 V
0
Output
90%
tstg
10%
–
50 µ
VCC
90%
90%
td
ton
10%
toff
3
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.