2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –7 V Collector current IC –1 A Collector peak current I C(peak) –2 A Collector power dissipation PC 1 W 8 W PC * 1 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C 2SA1194(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage –60 — — V I C = –1 mA, RBE = ∞ Collector cutoff current I CBO — — –1.0 µA VCB = –60 V, IE = 0 Emitter cutoff current I EBO — — –1.0 µA VEB = –7 V, IC = 0 DC current transfer ratio hFE 1000 — — Collector to emitter saturation voltage VCE(sat) — — –2.0 V Base to emitter saturation voltage VBE(sat) — — –2.0 V Turn on time t on — 0.7 — µs I C = –500 mA Turn off time t off — 0.8 — µs I B1 = –IB2 = –1 mA Note: VCE = –3 V, IC = –500 mA*1 1. Pulse test Maximum Collector Dissipation Curve Area of Safe Operation –1.0 ) D (T C O C = pe 25 rat °C ion ) hot –0.3 IC (max) PW = 10 ms (1 Shot) (1 S 4 –3 iC (peak) ms 8 =1 Collector Current IC (A) –10 PW Collector power dissipation Pc (W) 12 –0.1 –0.03 0 2 I C = –500 mA, IB = –1 mA*1 50 100 Case Temperature TC (°C) 150 Ta = 25°C –0.01 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector to emitter Voltage VCE (V) 2SA1194(K) –800 100,000 DC current transfer ratio hFE –1,000 Collector Current IC (mA) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics P c = .0 –0.8 8W –1 6 . 0 TC = 25°C – 4 –0. –0.2 –0.1 –0.08 –0.06 .0 –0 4 –600 –400 –0.02 –200 –0.01 mA 30,000 Ta = 75°C 10,000 25°C 3,000 1,000 IB = 0 –0.01 0 VCE = –3 V Pulse 300 100 –10 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) –1,000 Switching Time vs. Collector Current Saturation Voltage vs. Collector Current 10 –10 lC = 500 lB Pulse 3 Switching time t (µs) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) –30 –100 –300 Collector current IC (mA) –3 VBE (sat) Ta = 25°C –1.0 VCE (sat) 75°C –0.3 tstg 0.3 ton 0.1 td 0.03 –0.1 –10 –30 –100 –300 Collector current IC (mA) –1,000 toff 1.0 IC = 500 IB Ta = 25°C 0.01 –10 –30 –100 –300 Collector current IC (mA) –1,000 Switching Time Test Circuit IC VIN R1 tr, tf ≤ 10ns VIN PW ≥ 10µs duty ratio ≤ 10% Response Waveform 0 lB1 lB2 D.U.T. RL R2 0.002 µ 0.002 µ + 50 VBB 6V – 50 µ + 10% Input –10 V 0 Output 90% tstg 10% – 50 µ VCC 90% 90% td ton 10% toff 3 Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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