HITACHI 2SD1521

2SD1521
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1
ID
1. Emitter
2. Collector
3. Base
2
2 kΩ
(Typ)
3
0.5 kΩ
(Typ)
1
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1.5
A
Collector peak current
I C (peak)
3.0
A
Collector power dissipation
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
1.5
A
C to E diode forward current
Note:
1. Value at TC = 25°C.
ID*
1
2SD1521
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
(Zener breakdown voltage)
V(BR)CBO
[V Z]
50
60
70
V
I C = 0.1 mA, IE = 0
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CEO
—
—
10
µA
VCE = 50 V, RBE = ∞
DC current transfer ratio
hFE
2000
—
30000
Collector to emitter saturation
VCE (sat)1
—
—
1.5
V
I C = 1 A, IB = 1 mA*1
voltage
VCE (sat)2
—
—
2.0
V
I C = 1.5 A, IB = 1.5 mA*1
Base to emitter saturation
VBE (sat)1
—
—
2.0
V
I C = 1 A, IB = 1 mA*1
voltage
VBE (sat)2
—
—
2.5
V
I C = 1.5 A, IB = 1.5 mA*1
C to E diode forward voltage
VD
—
—
3.0
V
I D = 1.5 A
Turn on time
Ton
—
0.5
—
µs
I C = 1 A, IB1 = –IB2 = 1 mA
Turn off time
Toff
—
2.0
—
µs
Note:
VCE = 3 V, IC = 1 A*1
1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
1 µs
5
IC (max)
s
s
)
m
m
°C
1 10
25
=
=
(T C
10
3
1.0
0.3
0.1
0.03
50
100
Case temperature TC (°C)
150
100 µs
DC
Collector current IC (A)
iC (peak)
0
2
10
PW
Collector power dissipation Pc (W)
15
Ta = 25°C
1 shot pulse
0.01
3
10
30
100
300
Collector to emitter voltage VCE (V)
2SD1521
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
5
30,000
Collector current IC (A)
5
4
3
P
1
0.5
3
DC current transfer ratio hFE
10
C
=
0.3
20
W
0.2
2
0.1 mA
1
TC = 25°C
10,000
IB = 0
2
4
6
8
Collector to emitter voltage VCE (V)
TC
=7
C
5
–2
1,000
25
300
VCE = 3 V
100
30
0.03
10
Saturation Voltage vs. Collector Current
0.1
0.3
1.0
Collector current IC (A)
3
Switching Time vs. Collector Current
10
10
3
VBE (sat)
Switching time t (µs)
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
0
5°
3,000
1.0
VCE (sat)
lC/lB = 500
200
0.1
0.01
0.03
0.1
0.3
1.0
Collector current IC (A)
1.0
ton
0.3
tf
0.1
0.03
Ta = 25°C
Pulse test
3
tstg
0.01
0.03
Ta = 25°C
VCC = 30 V
IC = 500 IB1 = –500 IB2
0.1
0.3
1.0
Collector current IC (A)
3
3
2SD1521
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
100
30
10
3
0.1 to 100 s
0.1 to
1.0
0.3
TC = 25°C
0.1
0.1
1.0
0.1
1.0
Time t
4
s
100 m
10
100 (s)
10
100 (ms)
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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