2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8 V Collector current IC 1.5 A Collector peak current I C(peak) 3 A 10 W 150 °C –55 to +150 °C 1.5 A 1 Collector power dissipation PC * Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: ID* 1 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 150 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 80 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 50 mA, IC = 0 Collector cutoff current I CBO — — 5 µA VCB = 120 V, IE = 0 I CEO — — 5 µA VCE = 65 V, RBE = ∞ hFE 2000 — — VCE = 2 V, IC = 0.15 A*1 hFE 5000 — 30000 VCE = 2 V, IC = 1 A*1 hFE 1000 — — VCE = 2 V, IC = 1.5 A*1 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 1 A, IB = 1 mA*1 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 1 A, IB = 1 mA*1 C to E diode forward voltage VD — — 3.0 V I D = 1.5 A*1 DC current transfer ratio Note: 2 1. Pulse test. 2SD2019 Maximum Collector Dissipation Curve Area of Safe Operation 10 iC (peak) Collector current IC (A) 4 IC (max) 1.0 0.3 0.1 0.03 Ta = 25°C 1 shot pulse 0.01 0 50 100 Case temperature TC (°C) s 0µ 8 10 3 s s m 1 m 10 on = ati er ) PW Op 25°C DC = (T C Collector power dissipation Pc (W) 12 1 150 3 10 30 100 Collector to emitter voltage VCE (V) Transient Thermal Resistance 10 Typical Output Characteristics 2.0 180 3 1.0 10 o st 10 Collector current IC (A) Thermal resistance θj-c (°C/W) 10 ms to 10 s ms µ 0.3 0.1 0.01 0.1 1.0 10 (s) 0.01 0.1 1.0 10 (ms) Time t 1.6 1.2 0.8 200 160 140 120 100 80 60 µA 0.4 Ta = 25°C IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 3 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 100,000 30,000 10,000 3,000 1,000 300 VCE = 2 V 100 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) 10 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD2019 Saturation Voltage vs. Collector Current 10 3 VBE (sat) 1.0 VCE (sat) 0.3 lC = 100 lB Ta = 25°C 0.1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) Typical Characteristics of Emitter to Collector Diode 2.0 Diode current ID (A) 1.6 1.2 0.8 0.4 Ta = 25°C 0 4 0.4 0.8 1.2 1.6 1.8 Emitter to collector diode forward voltage VECF (V) 10 Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. 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