HITACHI 2SJ351

2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143
1st. Edition
Application
Low frequency power amplifier
Complementary pair with 2SK2220, 2SK2221
Features
•
•
•
•
•
•
•
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Ordering Information
Type No.
VDSX
2SJ351
–180 V
2SJ352
–200 V
2SJ351, 2SJ352
Outline
TO-3P
D
1
G
2
3
1. Gate
2. Source
(Flange)
3. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SJ351
Symbol
Ratings
Unit
VDSX
–180
V
2SJ352
–200
Gate to source voltage
VGSS
±20
V
Drain current
ID
–8
A
Body to drain diode reverse drain current
I DR
–8
A
1
Channel dissipation
Pch*
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. Value at TC = 25°C
2SJ351, 2SJ352
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SJ351
breakdown voltage
2SJ352
V(BR)DSX
Typ
Max
Unit
Test conditions
–180
—
—
V
I D = –10 mA, VGS = 10 V
–200
—
—
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source cutoff voltage
VGS(off)
–0.15
—
–1.45
V
I D = –100 mA, VDS = –10 V
Drain to source saturation
voltage
VDS(sat)
—
—
–12
V
I D = –8 A, VGD = 0*1
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
I D = –3 A, VDS = –10 V*1
Input capacitance
Ciss
—
800
—
pF
VGS = 5 V, VDS = –10 V,
Output capacitance
Coss
—
1000
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
18
—
pF
Turn-on time
t on
—
320
—
ns
Turn-off time
t off
—
120
—
ns
Note:
VDD = –30 V, ID = –4 A
1. Pulse test
3
2SJ351, 2SJ352
Power vs. Temperature Derating
Maximum Safe Operation Area
–20
Channel Dissipation
100
50
–5
–2
–1.0
–0.5
2SJ351
0
50
100
Case Temperature
–0.2
–5
150
Tc (°C)
Typical Output Characteristics
0V
= –1
–9
TC = 25°C
TC = 25°C
–8
–7
–6
Pc
h=
–5
–4
12
5W
–4
–3
–2
VGS = –10 V
–7
–6
–6
–5
–4
–4
–3
–2
–2
–2
–1
0
4
–9
–8
–1
0
–500
–8
Drain Current ID (A)
VG
–6
–10 –20
–50 –100 –200
Drain to Source Voltage VDS (V)
–10
S
–8
2SJ352
Typical Output Characteristics
–10
Drain Current ID (A)
Ta = 25°C
D
Drain Current ID (A)
–10
IDmax (Continuous)
ot
Sh hot
1
S
s
m s1
10 m
)
0
=
ot
°C
10
Sh 25
PW =
=
1
s TC
PW
1
(
= on
ti
PW era
p
O
C
Pch (W)
150
–10
–20
–30
–40
Drain to Source Voltage VDS (V)
–50
0
–2
–4
–6
–8
Drain to Source Voltage VDS (V)
–10
Drain Current ID (A)
Forward Transfer Admittance yfs (S)
–10
75
Typical Transfer Characteristics
VDS = –10 V
°C
–10
10 M 20 M
Forward Transfer Admittance vs. Frequency
–2
–4
–6
–8
Gate to Source Voltage VGS (V)
25
100 k
1M
Frequency f (Hz)
TC = 25°C
VDS = –10 V
ID = –2 A
10 k
–1.0
–0.8
–0.6
–0.4
–0.2
0
500
200
100
50
20
10
5
–0.1
ton
toff
–0.5 –1.0 –2
Drain Current ID (A)
–5
–2.0
–10
5
2SJ351, 2SJ352
Typical Transfer Characteristics
–0.2
Switching Time vs. Drain Current
–0.4
–0.8
–1.2
–1.6
Gate to Source Voltage VGS (V)
VDS = –10 V
25
°C
25
75
=–
C
T
–8
–6
–4
–2
0
5
1.0
100 m
10 m
1m
0.5 m
2k
Drain Current ID (A)
Switching Time ton, toff (ns)
25
=–
C
T
2SJ351, 2SJ352
Waveforms
Switching Time Test Circuit
Output
10%
RL
Input
Input
PW = 50 µs
duty ratio
= 1%
90%
VDD .=.
–30V
50 Ω
ton
toff
90%
Output
10%
6
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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