2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2922 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 10 V Gate to source voltage VGSS ±6 V Drain current ID 0.7 A 1.4 A 3 W Drain peak current I D(pulse) Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. PW ≤ 10ms, duty cycle ≤ 50 % 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current I DSS — — 100 µA VDS = 10 V, VGS = 0 Gate to source leak current I GSS — — ±5.0 µA VGS = ±6V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.4 — 1.2 V I D = 3mA, VDS = 5V Input capacitance Ciss — 27 — pF VGS = 2V, VDS = 0, f = 1MHz Output capacitance Coss — 13 — pF VDS = 5, VGS = 0, f = 1MHz Output Power Pout 31 — — dBm VDS = 4.7V, f =836.5Mhz Pin = 23dBm Drain Rational ηD 57 — — % VDS = 4.7V, f =836.5Mhz Pin = 23dBm Note: 2 1. Marking is “HX”. 2SK2922 Main Characteristics Typical Output Characteristics 5 4 I D (A) 2 1 5V 3 4V 3.5 V 2 3V 2.5 V 1 2V V GS = 1 V 50 100 150 Case Temperature Tc (°C) 0 200 25°C 75°C 0.6 0.4 0.2 0 1.0 1.5 Gate to Source Voltage 2.0 V GS (V) 10 3 25°C 1 Tc = –25°C 0.3 75°C 0.1 0.03 V DS = 5 V Pulse Test 0.5 Forward Transfer Admittance |y fs | (S) Tc = –25°C 0.8 6 2 3 4 5 1 Drain to Source Voltage V DS (V) Forward Transfer Admittance vs. Drain Current 1.0 (A) 5.5 V 4.5 V Typical Transfer Characteristics ID 6V 1.5 V 0 Drain Current Pulse Test 4 3 Drain Current Channel Power Dissipation Pch (W) Maximum Channel Power Dissipation Curve V DS = 5 V Pulse Test 0.01 2.5 0.001 0.003 0.01 0.3 0.1 0.3 1 Drain Current I D (A) 3 1 Drain to Source Saturation Voltage vs. Drain Current Gate to Source Cutoff Voltage vs. Ambient Temperature 1.0 0.3 Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Saturation Voltage VDS(sat) (V) 2SK2922 25°C 0.1 75°C 0.03 Tc = –25°C 0.01 0.003 V GS = 6 V Pulse Test 0.001 0.001 0.003 0.01 0.03 0.1 0.3 0.1 mA V DS = 5 V 0 25 50 75 100 125 Ambient Temperature Ta (°C) Output Capacitance vs. Drain to Source Voltage 35 100 30 25 20 V DS = 0 f = 1 MHz –2 0 2 4 6 –4 Gate to Source Voltage VGS (V) Output Capacitance Coss (pF) Input Capacitance Ciss (pF) 1 mA 0.2 Input Capacitance vs. Gate to Source Voltage 4 ID = 0.4 Drain Current I D (A) 15 –6 A 0.6 0 –25 1 10 m 0.8 V GS = 0 f = 1 MHz 50 20 10 5 2 1 0.1 0.2 0.5 1 2 Drain to Source V DS (V) 5 10 Output Power, Drain Rational vs. Input Power 10 100 2.5 V GS = 0 f = 1 MHz 5 2 1 0.1 0.2 0.5 1 2 5 Drain to Gate Voltege VDG (V) 10 ηD 2.0 80 Po Drain Rational η D (%) Reverse Transfer Capacitance vs. Drain to Gate Votage Output Power Po (W) Reverse Transfer Capacitance Crss (pF) 2SK2922 1.5 60 1.0 40 V DS = 4.7 V I DO = 150 mA f = 836.5MHz 0.5 0 100 200 300 400 20 0 500 Input power Pin (mW) 5 2SK2922 Package Dimensions Unit: mm 4.5 ± 0.1 φ 1.0 0.53 max 0.48 max 1 2 1.5 1.5 3.0 3 0.8 min 4 1.5 ± 0.1 0.44 max 2.5 ± 0.1 4.25 max 0.4 1.8 max 0.44 max Hitachi Code EIAJ JEDEC 6 UPAK SC–62 — Cautions 1. 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