HAT2036R Silicon N Channel Power MOS FET Power Switching ADE-208-665B(Z) Target specification 3rd. Edition May 1998 Features • Low on-resistance R DS(on) =12mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf=60ns typ. Outline SOP–8 8 5 6 7 8 D D D D 4 G 5 7 6 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2036R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 12 A 1 Drain peak current I D(pulse) * 96 A Body-drain diode reverse drain current I DR 12 A 2.5 W 2 Channel dissipation Pch* Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±20V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 3.0 V VDS = 10V, I D = 1mA Static drain to source on state RDS(on) — 12 15 mΩ I D = 6A, VGS = 10V *1 resistance RDS(on) — 20 30 mΩ I D = 6A, VGS = 4.5V *1 Forward transfer admittance |yfs| 12 20 — S I D = 6A, VDS = 10V *1 Input capacitance Ciss — 1200 — pF VDS = 10V Output capacitance Coss — 380 — pF VGS = 0 Reverse transfer capacitance Crss — 200 — pF f = 1MHz Total gate charge Qg — 23 — nc VDD = 10V Gate to source charge Qgs — 4.0 — nc VGS = 10V Gate to drain charge Qgd — 6.0 — nc I D = 12A Turn-on delay time t d(on) — 40 — ns VGS = 4.5V, ID = 6A Rise time tr — 300 — ns VDD ≈ 10V Turn-off delay time t d(off) — 35 — ns Fall time tf — 60 — ns Body–drain diode forward voltage VDF — 0.9 — V IF = 12A, VGS = 0 *1 Body–drain diode reverse recovery time t rr — 35 — ns IF = 12A, VGS = 0 diF/ dt =20A/µs Note: 2 1. Pulse test HAT2036R Main Characteristics Power vs. Temperature Derating Channel Dissipation Pch (W) 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 2.0 1.0 0 50 100 Ambient Temperature 150 Ta (°C) 3 HAT2036R Package Dimensions Unit: mm 1 4 6.2 Max 0.25 Max 5 1.75 Max 8 4.0 Max 5.0 Max 0 – 8° 0.51 Max 0.25 Max 1.27 1.27 Max 0.15 0.25 M 4 Hitachi code EIAJ JEDEC FP–8DA — MS-012AA Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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