HITACHI 2SK2569

2SK2569
Silicon N-Channel MOS FET
ADE-208-384
1st. Edition
Application
Low frequency power switching
Features
•
•
•
•
Low on-resistance.
R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA)
2.5V gate drive device.
Small package (MPAK).
Outline
MPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
2SK2569
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
50
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.2
A
0.4
A
Drain peak current
I D(pulse)*
1
2
Channel dissipation
Pch*
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
50
—
—
V
I D = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Zero gate voltage drain current I DSS
—
—
1.0
µA
VDS = 40 V, VGS = 0
Gate to source leak current
I GSS
—
—
±2.0
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
I D = 10 µA, VDS = 5 V
Static drain to source on state
resistance
RDS(on)1
—
2.0
2.6
Ω
I D = 100 mA
VGS = 4 V*1
Static drain to source on state
resistance
RDS(on)2
—
3.1
5.0
Ω
I D = 40 mA
VGS = 2.5 V*1
Foward transfer admittance
|yfs|
0.13
0.23
—
S
I D = 100 mA
VDS = 10 V
Input capacitance
Ciss
—
14.0
—
pF
VDS = 10 V
Output capacitance
Coss
—
17.2
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
1.73
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
40
—
µs
VGS = 10 V, ID = 100 mA
Rise time
tr
—
86
—
µs
RL = 300 Ω
Turn-off delay time
t d(off)
—
1120
—
µs
Fall time
tf
—
430
—
µs
Notes 1. Pulse Test
2. Marking is "ZN–"
2
2SK2569
Maximum Channel
Dissipation Curve
1
I D (A)
Drain Current
s
m
n
tio
0.01
0.003
50
100
150
Ambient Temperature
Ta (°C)
Typical Output Characteristics
10 V 4 V
10
30
100
V DS (V)
Typical Transfer Characteristics
0.20
2.3 V
(A)
2.5 V
0.12
2V
0.08
0.04
Pulse Test
0
3
Drain to Source Voltage
ID
0.16
200
0.001 Ta = 25 °C
0.1 0.3
1
Drain Current
0.20
I D (A)
10
Operation in
this area is
limited by R DS(on)
ra
0.03
pe
50
0.1
O
100
=
150
C
D
Channel Dissipation
1 ms
0.3
0
Drain Current
Maximum Safe Operation Area
PW
Pch (mW)
200
0.16
0.12
25°C
Tc = 75°C
–25°C
0.08
0.04
V DS = 5 V
Pulse Test
VGS = 1.5 V
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
3
2SK2569
0.4
I D = 0.2 A
0.2
0.1 A
0.1
0.05 A
0
2
4
6
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Gate to Source Voltage
4
Drain to Source On State Resistance
R DS(on) ( Ω )
0.3
Pulse Test
8
10
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8
I D = 0.2 A
6
VGS = 2.5 V
4
0.1 A
0.05 A
0.2 A
2
0.05, 0.1 A
4V
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
20
Pulse Test
10
5
VGS = 2.5 V
2
4V
1
0.5
0.2
0.01 0.02
V GS (V)
0
40
80
120
Case Temperature Tc (°C)
160
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.5
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
0.2
0.05 0.1 0.2
0.5
Drain Current I D (A)
1
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
0.1
0.05
25 °C
75 °C
0.02
0.01
V DS = 10 V
Pulse Test
0.005
0.001 0.003
0.01
0.03
0.1
0.3
Drain Current I D (A)
1
2SK2569
Typical Capacitance vs.
Drain to Source Voltage
100
t d(off)
1
Switching Time t (µs)
30
Ciss
10
Coss
3
Crss
1
0.3
VGS = 0
f = 1 MHz
0.1
0
10
20
30
40
50
tf
0.5
0.2
tr
0.1
V GS = 10 V
t d(on)
0.05 V DD = 30 V
PW = 5 µs
duty < 1 %
0.02
0.01 0.02 0.05 0.1 0.2
Drain to Source Voltage V DS (V)
Drain Current
0.5
1
I D (A)
Reverse Drain Current vs.
Source to Drain Voltage
0.20
Reverse Drain Current I DR (A)
Capacitance C (pF)
Switching Characteristics
2
0.16
0.12
–5 V
V GS = 0
0.08
0.04
Pulse Test
0
0.2
0.4
0.6
Source to Drain Voltage
0.8
1.0
V SD (V)
5
2SK2569
Avalanche Test Circuit and Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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