HITACHI 2SK3290

2SK3290
Silicon N Channel MOS FET
High Speed Switching
ADE-208-744 C (Z)
4th.Edition.
June 1999
Features
• Low on-resistance
R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA)
R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
1
D
2
1. Source
2. Gate
3. Drain
G
S
2SK3290
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
500
mA
2
A
500
mA
400
mW
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±16 V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
-1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
1.3
—
2.3
V
I D = 10µA, VDS = 5 V
Static drain to source on state RDS(on)
—
0.455
0.525
Ω
ID = 250 mA,VGS = 10 V Note 3
resistance
RDS(on)
—
0.9
1.25
Ω
ID = 100 mA,VGS = 4 V Note 3
Forward transfer admittance
|yfs|
350
540
—
mS
ID = 250 mA, VDS = 10 V Note 3
Input capacitance
Ciss
—
5
—
pF
VDS = 10 V
Output capacitance
Coss
—
30
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
2
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
240
—
ns
I D = 250 mA, VGS = 10 V
Rise time
tr
—
1700
—
ns
RL = 40Ω
Turn-off delay time
t d(off)
—
850
—
ns
Fall time
tf
—
1300
—
ns
Note:
2
3. Pulse test
4. Marking is BN
2SK3290
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
5
400
200
0.5
50
100
150
Ambient Temperature
DC
0.1
=
(1 10 m
sh s
er
o
at
ion t)
Op
0.05
0.02
0.01
0.005
Operation in this area
is limited by RDS)on)
200
0.001 Ta=25 °C
0.0005
0.05 0.1 0.2 0.5 1.0 2
Typical Outout Characteristics
7V 6V
5V
Drain Current
1.2
0.8
4V
25°C
1.6
75°C
1.2
Tc = –25°C
0.8
0.4
V DS = 10 V
Pulse Test
VGS = 3 V
2
4
6
Drain to Source Voltage
8
VDS (V)
VDS (V)
Typical Transfer Characteristics
1.6
0
50
2.0
Pulse Test
0.4
10 20
Value on the alumina ceramic boad.(12.5x20x0.7mm)
I D (A)
2.0
5
Drain to Source Voltage
Ta ( °C)
*Value on the alumina ceramic boad (12.5x20x0.7mm)
I D (A)
PW
0.2
0.002
0
Drain Current
10 µs
100 µs
1 ms
2
1.0
I D (A)
600
Drain Current
Channel Dissipation
*Pch (mW)
800
10
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
3
2SK3290
Pulse Test
0.4
0.3
I D = 500mA
0.2
250m A
0.1
100m A
Static Drain to Source on State Resistance
R DS(on) ( )
0
2.0
6
2
4
Gate to Source Voltage
VGS = 4V
0.8
10 V
100m A, 250m A, 500m A
Pulse Test
0
40
80
Case Temperature
5
Pulse Test
2
VGS = 4V
1.0
0.5
10 V
0.2
0.1
0.05
0.1
0.2
Drain Current
120
Tc
( °C)
0.5
I D (A)
1.0
Forward Transfer Admittance
vs. Drain Current
I D = 500m A
0.4
Static Drain to Source on State
Resistance vs. Drain Current
VGS (V)
100m A, 250m A
0
–40
4
10
Static Drain to Source on State
Resistance vs. Temperature
1.6
1.2
8
160
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Static Drain to Source on StateResistance
R DS(on) ( )
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
V DS = 10 V
Pulse Test
2
Tc = –25 °C
1.0
0.5
25 °C
75 °C
0.2
0.1
0.05
0.1
0.2
0.5
Drain Current I D (A)
1.0
2SK3290
Typical Capacitance
vs. Drain to Source Voltage
100
VGS = 0
f = 1 MHz
Coss
20
10
Ciss
5
2
1
Crss
0
10
20
30
Switching Characteristics
5000
Switching Time t (ns)
50
Capacitance C (pF)
10000
2000
tr
tf
1000
500
t d(off)
200
t d(on)
100
50
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
20
40
Drain to Source Voltage VDS
50
(V)
10
0.1
0.2
Drain Current
0.5
1.0
I D (A)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
2.0
1.6
1.2
V GS = 0,-5V
10 V
5V
0.8
0.4
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
VSD
2.0
(V)
5
2SK3290
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2SK3290
Package Dimensions
1.9
+ 0.2
2.8 – 0.6
0.65 – 0.3
0.95
0.45 0.95
0 ~ 0.1
+ 0.2
2.95 – 0.2
1.1– 0.1
+ 0.2
0.3
0.45
+ 0.10
0.16 – 0.06
+ 0.1
1.5
0.65 – 0.3
+ 0.10
0.4 – 0.05
+ 0.1
Unit: mm
MPAK
Hitachi Code
SC-59
EIAJ
TO-236Mod.
JEDEC
7
2SK3290
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
8