HITACHI 2SJ317

2SJ317
Silicon P-Channel MOS FET
Application
High speed power switching
Low voltage operation
Features
• Very low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ317
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–12
V
Gate to source voltage
VGSS
–7
V
Drain current
ID
±2
A
±4
A
2
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm).
3. Marking is “NY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–12
—
—
V
I D = –1 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±7
—
—
V
I G = ±10 µA, VDS = 0
Gate to source cutoff current
I GSS
—
—
±5
µA
VGS = ±6.5 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–1
µA
VDS = –8 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–0.4
—
–1.4
V
I D = –100 µA, VDS = –5 V
Static drain to source on state
RDS(on)1
—
0.4
0.7
Ω
I D = –0.5 A*1, VGS = –2.2 V
resistance
RDS(on)2
—
0.28
0.35
Ω
I D = –1 A*1, VGS = –4 V
Forward transfer admittance
|yfs|
1.0
2.3
—
S
I D = –1 A*1, VDS = –5 V
Input capacitance
Ciss
—
63
—
pF
VDS = –5 V, VGS = 0,
Output capacitance
Coss
—
180
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
23
—
pF
Turn-on time
t on
—
500
—
ns
I D = –0.2 A*1, Vin = –4 V,
Turn-off time
t off
—
2860
—
ns
RL = 51 Ω
Note:
2
1. Pulse test
2SJ317
Maximun Safe Operation Area
Maximun Power Dissipation Curve
–10
Drain Current
1.5
1.0
0.5
50
100
150
200
Ambient Temperature Ta (°C)
D
C
O
(T pe
c= ra
25 tio
°C n
)
–1
–0.3
–0.1
Ta = 25°C
–0.01
–0.1 –0.3 –1.0 –3
–10 –30 –100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–4
–3
–4
–3
–2.5
Ta = –25°C
Pulse test
–2
–2
–1.5
–1
I D (A)
–5
Typical Forward Transfer Characteristics
–5
Drain Current
–5
I D (A)
PW = 1 ms
1 shot
–0.03
0
Drain Current
Operation in this Area
is limited by RDS(on)
–3
I D (A)
Channel Power Dissipation Pch (W)
(on the aluminam ceramic board)
2.0
–4
25°C
–3
–2
–1
VGS = –1 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
75°C
0
VDS = –5 V
Pulse test
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
3
2SJ317
Drain to Source on State Resistance
vs. Drain Current
10
20
Drain to Source On State Resistance
R DS(on) ( Ω )
Forward Transfer Admittance |y fs | (S)
Forward Transfer Admittance vs.
Drain Current
VDS = –5 V
Pulse test
10
5
Ta = –25°C
2
25°C
75°C
1
Pulse test
5
2
VGS = –2 V
1
0.5
0.2
–0.1 –0.2
–0.5 –1.0 –2
–5
Drain Current I D (A)
–0.5
–10
0.1
–0.1 –0.2
Pulse test
–0.4
I D = –1 A
–0.3
–0.2
–0.5 A
–0.1 A
–0.1
–0.2 A
0
–1
–2
–3
Gate to Source Voltage
–4
V GS (V)
–0.5 –1.0 –2
–5
Drain Current I D (A)
–10
Drain to Source on State Resintance
vs. Case Temperature
Drain to Source on State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage
V DS(on) (V)
–4 V
0.2
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
4
–3 V
0.5
–5
1.0
Pulse test
0.8
I D = –2 A
–1 A
–0.5 A
0.6
VGS = –2.5 V
0.4
0.2
0
–25
I D = –2 A
–1 A, –0.5A
VGS = –4 V
0
25
50
75
Case Temperature Tc (°C)
100
2SJ317
Reverse Recovery Time vs.
Reverse Drain Current
Switching Time vs. Drain Current
2000
2000
t (ns)
500
Switching Time
200
100
di/dt = 10 A/µs
V GS = 0
50
VGS
–15
–6
–10
–4
–5
–2
VDS
2
4
Gate Charge
6
8
Qg (nc)
tr
VGS = –4 V
.
200 V DD =. –10 V
PW = 5 µs
Duty cycle <
=1 %
100
td(on)
–5
0
10
1000
C (pF)
–8
Gate to Source Voltage VGS (V)
Drain to Source Voltage V DS (V)
–10
V DD = –10 V
I D = –2 A
–20 Pulse test
500
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
–25
td(off)
50
–0.05 –0.1 –0.2
–0.5 –1 –2
Drain Current I D (A)
20
–0.1 –0.2
–0.5 –1.0 –2
–5 –10
Reverse Drain Current I DR (A)
0
tf
1000
Typical Capacitance
Reverse Recovery Time trr (ns)
1000
500
Coss
VGS = 0
f = 1 MHz
200
100
50
Ciss
20
Crss
10
–0.1 –0.2 –0.5 –1.0 –2
–5 –10
Drain to Source Voltage V DS (V)
5
2SJ317
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current
I DR (A)
–4
Pulse test
–3
–2
VGS = 0 V
–1
0
6
VGS = –4 V
–2.5 V
–0.5
–1.0
–1.5
–2.0
Source to Drain Voltage V SD (V)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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