HITACHI 2SK2570

2SK2570
Silicon N-Channel MOS FET
Low Frequency Power Switching
ADE-208-574
1st. Edition
Features
• Low on-resistance
R DS(on) = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
MPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
2SK2570
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
0.2
A
0.4
A
1
Drain peak current
I D(pulse)*
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
20
—
—
V
I D = 10µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
1.0
µA
VDS = 20 V, VGS = 0
Gate to source leak current
I GSS
—
—
±5.0
µA
VGS = ±6.5V, VDS = 0
Gate to source cutoff voltage VGS(off)
0.5
—
1.5
V
I D = 10µA, VDS = 5V
Static drain to source on state RDS(on)
resistance
—
0.8
1.1
Ω
I D = 100 mA
VGS = 4V *1
—
1.3
2.2
Ω
I D = 40 mA
VGS = 2.5V *1
Forward transfer admittance
|yfs|
0.22
0.35
—
S
I D = 100 mA
VDS = 10V *1
Input capacitance
Ciss
—
45
—
pF
VDS = 10V
Output capacitance
Coss
—
33
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
9.6
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
20
—
ns
VGS = 5V, ID = 100 mA
Rise time
tr
—
60
—
ns
RL = 100Ω
Turn-off delay time
t d(off)
—
240
—
ns
Fall time
tf
—
140
—
ns
Notes: 1. Pulse test
2. Marking is “ZL–”
2
2SK2570
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
I D (A)
5
150
Drain Current
Channel Dissipation
Pch (mW)
200
100
50
0
50
100
150
Ambient Temperature
200
Ta (°C)
2
1
1 ms
PW
0.2
(1 10 m =
DC
sh s
ot
0.1
O
)
pe
Operation in
ra
tio
0.05 this area is
n
limited by R DS(on)
0.02
Ta = 25 °C
0.01
1 shot
0.05
0.2 0.5 1 2
5 10 20
50 100
Drain to Source Voltage V DS (V)
0.5
Typical Transfer Characteristics
Typical Output Characteristics
2V
10 V
5V
2.5 V
I D (A)
0.16
0.20
0.12
1.8 V
0.08
0.04
VGS = 1.6 V
Drain Current
Drain Current
I D (A)
0.20
0.16
75°C
0.12
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Tc = –25°C
0.08
0.04
V DS = 10 V
Pulse Test
Pulse Test
0
25°C
0
0.5
1.0
1.5
Gate to Source Voltage
2.0
2.5
V GS (V)
3
2SK2570
0.4
0.3
0.2
I D = 0.2 A
0.1
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
4
Pulse Test
0.1 A
0.05 A
6
2
4
Gate to Source Voltage
8
10
Static Drain to Source on State Resistance
vs. Temperature
2.5
I D = 0.2 A
2.0
1.5
VGS = 2.5 V
0.05, 0.1A
1.0
0.05, 0.1, 0.2 A
0.5
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
VGS = 2.5 V
1
4V
0.5
0.2
0.1
0.01
V GS (V)
4V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
0.02
0.05 0.1
0.2
Drain Current I D (A)
0.5
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1
0.5
0.2
Tc = –25 °C
0.1
25 °C
0.05
75 °C
0.02
0.01
0.005
0.002
V DS = 10 V
Pulse Test
0.005 0.01 0.02 0.05 0.1
Drain Current I D (A)
0.2
2SK2570
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
500
500
t d(off)
Switching Time t (ns)
Capacitance C (pF)
200
100
50
Ciss
20
Coss
10
Crss
5
1
0
4
100
8
12
16
20
Drain to Source Voltage V DS (V)
tf
tr
50
20
10
VGS = 0
f = 1 MHz
2
200
5
0.05
t d(on)
V GS = 5 V, V DD = 10 V
PW = 5 µs, duty < 1 %
0.1
0.2
Drain Current I D (A)
0.5
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
0.20
0.16
0.12
V GS = 0
5V
0.08
0.04
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
5
2SK2570
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
5V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2SK2570
Package Dimensions
1.9
+ 0.2
2.8 – 0.6
0 ~ 0.15
0.65 – 0.3
0.95
0.95
+ 0.10
0.16 – 0.06
+ 0.1
1.5
0.65 – 0.3
+ 0.10
0.4 – 0.05
+ 0.1
Unit: mm
+ 0.3
1.1– 0.1
+ 0.2
0.3
2.8 – 0.1
MPAK
Hitachi Code
SC–59A
EIAJ
TO–236Mod.
JEDEC
7
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.