2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS(on) = 0. 8Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±10 V Drain current ID 0.2 A 0.4 A 1 Drain peak current I D(pulse)* Channel dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 20 — — V I D = 10µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±10 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — 1.0 µA VDS = 20 V, VGS = 0 Gate to source leak current I GSS — — ±5.0 µA VGS = ±6.5V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V I D = 10µA, VDS = 5V Static drain to source on state RDS(on) resistance — 0.8 1.1 Ω I D = 100 mA VGS = 4V *1 — 1.3 2.2 Ω I D = 40 mA VGS = 2.5V *1 Forward transfer admittance |yfs| 0.22 0.35 — S I D = 100 mA VDS = 10V *1 Input capacitance Ciss — 45 — pF VDS = 10V Output capacitance Coss — 33 — pF VGS = 0 Reverse transfer capacitance Crss — 9.6 — pF f = 1MHz Turn-on delay time t d(on) — 20 — ns VGS = 5V, ID = 100 mA Rise time tr — 60 — ns RL = 100Ω Turn-off delay time t d(off) — 240 — ns Fall time tf — 140 — ns Notes: 1. Pulse test 2. Marking is “ZL–” 2 2SK2570 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area I D (A) 5 150 Drain Current Channel Dissipation Pch (mW) 200 100 50 0 50 100 150 Ambient Temperature 200 Ta (°C) 2 1 1 ms PW 0.2 (1 10 m = DC sh s ot 0.1 O ) pe Operation in ra tio 0.05 this area is n limited by R DS(on) 0.02 Ta = 25 °C 0.01 1 shot 0.05 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage V DS (V) 0.5 Typical Transfer Characteristics Typical Output Characteristics 2V 10 V 5V 2.5 V I D (A) 0.16 0.20 0.12 1.8 V 0.08 0.04 VGS = 1.6 V Drain Current Drain Current I D (A) 0.20 0.16 75°C 0.12 2 4 6 Drain to Source Voltage 8 10 V DS (V) Tc = –25°C 0.08 0.04 V DS = 10 V Pulse Test Pulse Test 0 25°C 0 0.5 1.0 1.5 Gate to Source Voltage 2.0 2.5 V GS (V) 3 2SK2570 0.4 0.3 0.2 I D = 0.2 A 0.1 Static Drain to Source on State Resistance R DS(on) ( Ω) 0 4 Pulse Test 0.1 A 0.05 A 6 2 4 Gate to Source Voltage 8 10 Static Drain to Source on State Resistance vs. Temperature 2.5 I D = 0.2 A 2.0 1.5 VGS = 2.5 V 0.05, 0.1A 1.0 0.05, 0.1, 0.2 A 0.5 0 –40 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 VGS = 2.5 V 1 4V 0.5 0.2 0.1 0.01 V GS (V) 4V Pulse Test 0 40 80 120 160 Case Temperature Tc (°C) 0.02 0.05 0.1 0.2 Drain Current I D (A) 0.5 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1 0.5 0.2 Tc = –25 °C 0.1 25 °C 0.05 75 °C 0.02 0.01 0.005 0.002 V DS = 10 V Pulse Test 0.005 0.01 0.02 0.05 0.1 Drain Current I D (A) 0.2 2SK2570 Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 500 500 t d(off) Switching Time t (ns) Capacitance C (pF) 200 100 50 Ciss 20 Coss 10 Crss 5 1 0 4 100 8 12 16 20 Drain to Source Voltage V DS (V) tf tr 50 20 10 VGS = 0 f = 1 MHz 2 200 5 0.05 t d(on) V GS = 5 V, V DD = 10 V PW = 5 µs, duty < 1 % 0.1 0.2 Drain Current I D (A) 0.5 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 0.20 0.16 0.12 V GS = 0 5V 0.08 0.04 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) 5 2SK2570 Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 5V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) 6 tr 10% 90% td(off) tf 2SK2570 Package Dimensions 1.9 + 0.2 2.8 – 0.6 0 ~ 0.15 0.65 – 0.3 0.95 0.95 + 0.10 0.16 – 0.06 + 0.1 1.5 0.65 – 0.3 + 0.10 0.4 – 0.05 + 0.1 Unit: mm + 0.3 1.1– 0.1 + 0.2 0.3 2.8 – 0.1 MPAK Hitachi Code SC–59A EIAJ TO–236Mod. JEDEC 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.