HITACHI 2SK2980

2SK2980
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-571B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R DS(on) = 0. 2Ω typ. (VGS = 4 V, I D = 500 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
MPAK
3
1
D
2
1. Source
2. Gate
3. Drain
G
S
2SK2980
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
+12
V
–10
V
1.0
A
4
A
0.8
W
Drain current
Drain peak current
ID
I D(pulse)
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
2SK2980
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 100µA, VGS = 0
Gate to source breakdown
V(BR)GSS
+12
—
—
V
I G = +100µA, VDS = 0
–10
—
—
V
I G = –100µA, VDS = 0
voltage
Zero gate voltege drain
current
I DSS
—
—
1.0
µA
VDS = 30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±5.0
µA
VGS = ±8V, VDS = 0
Gate to source cutoff voltage VGS(off)
0.5
—
1.5
V
I D = 10µA, VDS = 5V
Static drain to source on state RDS(on)
resistance
—
0.2
0.28
Ω
I D = 500 mA
Static drain to source on state RDS(on)
resistance
—
Forward transfer admittance
1.2
|yfs|
VGS = 4V Note3
0.3
0.5
Ω
I D = 500 mA
VGS = 2.5V Note3
2.0
—
S
I D = 500 mA
VDS = 10V Note3
Input capacitance
Ciss
—
155
—
pF
VDS = 10V
Output capacitance
Coss
—
75
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
35
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
12
—
ns
VGS = 4V, ID = 500 mA
Rise time
tr
—
30
—
ns
RL = 20Ω
Turn-off delay time
t d(off)
—
35
—
ns
Fall time
tf
—
30
—
ns
Note:
3. Pulse test
4. Marking is “ZZ– ”
3
2SK2980
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
Test condition :
When using alumina ceramic board
(12.5 x 20 x 0.7 mm)
30
Drain Current I D (A)
Channel Dissipation Pch (W)
1.6
1.2
0.8
0.4
10
3
50
100
150
Ambient Temperature
200
Ta (°C)
0.1
Operation in
this area is
limited by R DS(on)
100
Typical Transfer Characteristics
1.0
4V
2.5 V
Pulse Test
0.8
0.8
2V
Drain Current I D (A)
Drain Current I D (A)
s
Ta = 25 °C
0.01
3
30
0.1 0.3
1
10
Drain to Source Voltage V DS(V)
Typical Output Characteristics
0.6
1.8 V
0.4
0.2
25°C
0.6
2
4
6
Drain to Source Voltage V
8
DS(V)
75°C
Tc = –25°C
0.4
0.2
V DS = 10 V
Pulse Test
VGS = 1.5 V
4
1m
=1
(1 0 m
DC
sh s
Op
ot)
era
tio
n
0.3
1.0
0
PW
1
0.03
0
10 µs 100 µs
10
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
2SK2980
0.4
0.3
0.2
ID=1A
0.5 A
0.1
0.2 A
0
Static Drain to Source on State Resistance
R DS(on) ( W)
Pulse Test
6
2
4
Gate to Source Voltage
8
I D = 0.1 A, 0.2 A, 0.5 A
0.4
VGS = 2.5 V
0.3
0.1 A, 0.2 A, 0.5 A
4V
0.1
0
–40
1
0.5
VGS = 2.5 V
0.2
4V
0.1
0.2
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.2
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
0.05
0.1
10
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
0.5
1
2
Drain Current I D (A)
5
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Drain to Source On State Resistance
R DS(on) ( W)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
2
Tc = –25 °C
1
25 °C
0.5
75 °C
0.2
0.1
0.05
0.01 0.02
V DS = 10 V
Pulse Test
0.05 0.1 0.2
0.5
Drain Current I D (A)
1
5
2SK2980
Typical Capacitance vs.
Drain to Source Voltage
200
Drain to Source Voltage
Coss
100
Ciss
50
Crss
20
10
5
0
10
20
30
40
40
16
30
V GS
4
6
8
0
10
Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
Reverse Drain Current I DR (A)
100
Switching Time t (ns)
2
Gate Charge
200
tr
t d(off)
tf
20
t d(on)
10
5
V GS = 4 V, V DD = 10 V
PW = 2 µs, duty < 1 %
2
6
4
V DD = 20 V
10 V
5V
Switching Characteristics
1
0.1
8
10
Drain to Source Voltage V DS (V)
50
12
V DD = 5 V
10 V
20 V
V DS
20
0
50
20
ID=1A
0.2
0.5
1
Drain Current
2
5
I D (A)
10
0.8
0.6
V GS = 0
5V
0.4
0.2
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Gate to Source Voltage
500
Capacitance C (pF)
V DS (V)
VGS = 0
f = 1 MHz
50
V GS (V)
Dynamic Input Characteristics
1000
2SK2980
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50W
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
2SK2980
Package Dimensions
1.9
0 ~ 0.15
+ 0.1
– 0.3
2.8
+ 0.2
– 0.6
+ 0.10
– 0.06
0.65
0.95
0.95
0.16
0.65
+ 0.10
– 0.05
1.5
0.4
+ 0.1
– 0.3
Unit: mm
+ 0.3
1.1 – 0.1
+ 0.2
0.3
2.8 – 0.1
MPAK
Hitachi Code
SC–59A
EIAJ
TO–236Mod.
JEDEC
8
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.