HITACHI 2SJ244

2SJ244
Silicon P-Channel MOS FET
Application
High speed power switching
Low voltage operation
Features
• Very Low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ244
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–12
V
Gate to source voltage
VGSS
±7
V
Drain current
ID
±2
A
±4
A
Drain peak current
I D(pulse)*
1
2
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “JY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–12
—
—
V
I D = –1 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±7
—
—
V
I G = ±10 µA, VDS = 0
Gate to source cutoff current
I GSS
—
—
±5
µA
VGS = ±6 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–1
µA
VDS = –8 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–0.4
—
–1.4
V
I D = –100 µA, VDS = –5 V
Static drain to source on state
resistance
RDS(on)1
—
0.65
0.9
Ω
I D = –0.5 A*1, VGS = –2.5 V
Static drain to source on state
resistance
RDS(on)2
—
0.5
—
Ω
I D = –1 A*1, VGS = –4 V
Forward transfer admittance
|yfs|
—
1.8
—
S
I D = –1 A*1, VDS = –5 V
Input capacitance
Ciss
—
130
—
pF
VDS = –5 V, VGS = 0,
Output capacitance
Coss
—
50
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
260
—
pF
Turn-on delay time
t (on)
—
365
—
ns
I D = –0.2 A*1, Vin = –4 V,
Turn-off delay time
t (off)
—
1450
—
ns
RL = 51 Ω
Body to drain diode forward
voltage
VDF
—
—
7
V
I F = 4 A*1, VGS = 0
Note:
2
1. Pulse test
2SJ244
Maximum Safe Operation Area
-10
Maximum Channel Power Dissipation Curve
Operation in this Area
is limited by R DS(on)
PW = 1 ms 1 shot
2.0
Drain Current I D ( A )
Channel Power Dissipation Pch ( W )
(on the alumina ceramic board)
-3
1.5
1.0
pe
ra
tio
n
(T
a=
-0.3
25
°C
)
-0.1
-0.01
-0.1
-0.3
-1.0
-3
-10
-30
-100
Drain to Source Voltage V DS (V)
50
100
Ambient Temperature
150
Ta ( °C )
200
**on the alumina
ceramic board
Typical Forward Transfer Characteristics
-5
-5
-5
-3
-3
-2.5
-2
-2
+25
+75
-3
-2
-1
-1
Pulse Test
0
Ta = -25 °C
Pulse Test
-4
ID
(A)
- 4.5
Drain Current
-4
VDS = -5 V
-3.5
-4
(A)
O
-0.03
Typical Output Characteristics
ID
C
0.5
0
Drain Current
D
-1.0
V GS = -1.5 V
-6
-4
-2
Drain to Source Voltage
-10
-8
V DS
(V)
0
-1
-2
-3
Gate to Source Voltage
-4
V GS
-5
(V)
3
2SJ244
Drain to Source on State Resistance vs.
Drain Current
Forward Transfer Admittance |Yfs| ( S )
20
VDS = -5 V
Pulse Test
10
5
Ta = -25 °C
+25
2
+75
1.0
0.5
0.2
-0.1
-0.2
-1.0
-0.5
Drain Current
-2
ID
-5
-10
Drain to Source On State Resistance R DS(on) (Ω )
Forward Transfer Admittance vs.
Drain Current
-0.8
I D = -1 A
-0.5
-0.2
-0.2
-0.1
-1
-2
-3
Gate to Source Voltage
4
2
-2 V
1.0
-3 V
0.5
VGS = -4 V
0.2
-1.0
-2
-0.5
Drain Current I D (A)
-0.2
-4
V GS
(V)
-5
-5
-10
Drain to Source on State Resistance vs.
Case Temperature
Drain to Source On State Resistance R DS(on) (Ω )
Drain to Source Saturation Voltage V DS(on) ( V )
Pulse Test
0
5
(A)
-1.0
-0.4
Pulse Test
0.1
-0.1
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-0.6
10
1.0
Pulse Test
I D = -1 A
VGS = -2.5 V
0.8
-0.5 A
0.6
-0.5 A
I D = -1 A
0.4
VGS = -4 V
0.2
0
-25
0
25
50
75
Case Temperature Tc ( °C )
100
2SJ244
Reverse Recovery Time vs.
Reverse Drain Current
Switching Time vs. Drain Current
2000
di/dt = 10 A/µs
PW = 10 µs
1000
500
500
t ( ns )
1000
VGS = - 4 V, V DD = - 10 V
PW = 2 µs, Duty Cycle = 1 %
td(off)
tf
tr
200
200
Switching Time
Reverse Recovery Time
t rr ( ns )
2000
100
50
100
td(on)
50
20
20
-0.1
-0.2
-2
-5
Reverse Drain Current
I DR (A)
-0.5
-1.0
-0.1
-10
-0.2
-0.5
-1.0
Drain Current
-2
-5
-10
I D (A)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
1000
-10
-25
Drain to Source Voltage
V GS
-15
-6
-10
-4
-2
V DD = -10 V
-5 V
V DS
2
4
Gate Charge
6
Qg
8
( nc )
( pF )
f = 1 MHz
500
Coss
200
100
50
Ciss
Crss
20
10
0
0
C
-8
Typical Capacitance
-20
V GS ( V )
V DD = -10 V
Gate to Source Voltage
Pulse Test
-5
VGS = 0
-5 V
V DS
(V)
I D = -4 A
10
-0.1
-0.2
-0.5
-1.0
-2
-5
Drain to Source Voltage V DS (V)
-10
5
2SJ244
Reverse Drain Current vs.
Source to Drain Voltage
-4
Reverse Drain Current I DR
(A)
Pulse Test
-3
-2
-2.5 V
-1
VGS = 0
0
6
-4 V
-0.5
-1.0
-1.5
Source to Drain Voltage VSD
(V)
-2.0
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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