2SK972 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1. Gate 2. Drain (Flange) 3. Source 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK972 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V * ——————— ——————————– 0.05 ID = 15 A, VGS = 4 V * 0.06 ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 720 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ———————————————————————————————— Rise time tr — 130 — ns ID = 15 A, VGS = 10 V, RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 270 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body to drain diode forward voltage VDF — 1.3 — V IF = 25 A, VGS = 0 ——————————————————————————————————————————— Body to drain diode reverse recovery time trr — 135 — ns IF = 25 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2SK972 Maximum Safe Operation Area Power vs. Temperature Derating 500 300 is ar ea is (o n) S tio n 3.5 V 20 3.0 V 10 25 ) 0.3 1.0 3 10 30 100 Typical Transfer Characteristics 40 Pulse Test 30 = °C 75°C 4.5 V 4.0 V (T Ta = 25°C 50 Drain Current ID (A) Drain Current ID (A) ra ) 40 10 V 8V 6V µs Drain to Source Voltage VDS (V) Typical Output Characteristics 50 pe C 0.5 0.1 150 O µs ot 50 100 Case Temperature TC (°C) C 3 1.0 0 D D O lim pe ite rat d ion by in R th 10 0 Sh 20 30 10 10 s (1 m s 1 0m 1 = Drain Current ID (A) 40 100 PW Channel Dissipation Pch (W) 60 VDS = 10 V Pulse Test TC= 25°C –25°C 30 20 10 VGS = 2.5 V 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK972 Drain to Source Saturation Voltage VDS (on) (V) 5 Pulse Test 4 3 ID = 50 A 2 1 0 20 A 10 A 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on Static Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 VGS = 4 V 0.1 0.05 10 V 0.02 0.01 0.005 1 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test ID = 20 A 0.08 0.06 10 A VGS = 4 V 20 A 5 A 10 A 0.04 5A 0.02 0 –40 VGS = 10 V 0 40 120 80 Case Temperature TC (°C) 5 20 10 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.10 2 160 100 50 VDS = 10 V Pulse Test –25°C TC = 25°C 20 10 75°C 5 2 1 0.5 1.0 2 10 20 5 Drain Current ID (A) 50 2SK972 Typical Capacitance vs. Drain to Source Voltage Body to Diode Reverse Recovery Time 10,000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 500 VGS = 0 f = 1 MHz 3,000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1,000 200 100 50 Ciss 1,000 Coss 300 Crss 100 30 20 10 10 0.5 2 1.0 5 10 20 Reverse Drain Current IDR (A) 0 50 Switching Characteristics Dynamic Input Characteristics 25 V 80 16 10 V 60 VGS VDS 40 0 12 8 VDD = 50 V 25 V 10 V 4 ID = 25 A 20 40 60 80 Gate Charge Qg (nc) 0 100 Switching Time t (ns) VDD = 50 V 20 1000 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 100 10 20 30 40 50 Drain to Source Voltage VDS (V) 500 td (off) 200 tf 100 tr 50 VGS = 10 V PW = 2µs, duty < 1 % 20 10 0.5 td (on) 1.0 2 5 10 20 Drain Current ID (A) 50 2SK972 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 Pulse Test 40 10 V 15 V 30 20 5V 10 Normalized Transient Thermal Impedance γS (t) 0 VGS = 0, –5 V 0.4 1.2 0.8 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c(t) = γS (t) · θch–c θch–c = 2.5°C/W, TC = 25°C 0.1 0.1 0.03 0.01 10 µ 0.05 0.02 lse 1 0.0 ot Pu h S 1 100µ PDM T 1m 10 m Pulse Width PW (s) 100 m D = PW T PW 1 10 2SK972 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Ω Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf