ETC 2SK2418L

2SK2418 L , 2SK2418 S
Silicon N Channel MOS FET
Application
DPAK-2
High speed power switching
4
4
Features
12
•
•
•
•
Low on–resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from
3 V source
• Suitable for Switching regulator, DC – DC
converter
3
2, 4
12
3
1
1.
2.
3.
4.
3
Gate
Drain
Source
Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
20
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±10
V
———————————————————————————————————————————
Drain current
ID
7
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
28
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
7
A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
2SK2418 L , 2SK2418 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
20
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
IG = ±200 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±6.5 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
100
µA
VDS = 16 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.04
0.05
Ω
ID = 4 A
VGS = 4 V *
————————————————————————
—
0.05
0.07
Ω
ID = 4 A
VGS = 2.5 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
7
12
—
S
ID = 4 A
VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
810
—
pF
VDS = 10 V
————————————————————————————————
Output capacitance
Coss
—
600
—
pF
VGS = 0
————————————————————————————————
Reverse transfer capacitance
Crss
—
155
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
15
—
ns
ID = 4 A
————————————————————————————————
Rise time
tr
—
90
—
ns
————————————————————————————————
Turn–off delay time
td(off)
—
150
—
ns
VGS = 4 V
RL = 2.5 Ω
————————————————————————————————
Fall time
tf
—
120
—
ns
———————————————————————————————————————————
Body–drain diode forward
voltage
VDF
—
0.9
—
V
IF = 7 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
recovery time
trr
—
60
—
ns
IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
———————————————————————————————————————————
* Pulse Test
2SK2418 L , 2SK2418 S
Power vs. Temperature Derating
50
I D (A)
20
20
10
5
10
s
m
s
(1
sh
ot
)
n
(T
2
Operation in
this area is
limited by R DS(on)
m
tio
c
=
25
)
°C
50
100
Case Temperature
150
Ta = 25 °C
0.5
0.5
1
2
5
10 20
50
Drain to Source Voltage V DS (V)
200
Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
20
Pulse Test
2V
12
8
4
V DS = 10 V
Pulse Test
(A)
10 V
6V
4V
2.5 V
VGS = 1.5 V
ID
16
20
Drain Current
I D (A)
1
=
1
0
Drain Current
PW
ra
10
10 µs
10
0
µs
pe
O
Drain Current
30
Maximum Safe Operation Area
C
D
Channel Dissipation
Pch (W)
40
16
12
8
4
–25°C
Tc = 75°C
25°C
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
2SK2418 L , 2SK2418 S
Drain to Source On State Resistance
R DS(on) ( Ω )
0.3
Pulse Test
0.4
0.2
ID=5A
0.1
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
2A
1A
2
4
6
Gate to Source Voltage
8
10
Pulse Test
0.08
I D = 1 A, 2 A, 5 A
V GS = 2.5 V
1 A, 2 A, 5 A
0.04
4V
0.02
0
–40
0.2
0.1
VGS = 2.5 V
0.05
4V
0.02
0.01
0.3
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.1
0.06
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.005
0.1
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.5
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
1
3
Drain Current
10
30
I D (A)
100
Forward Transfer Admittance vs.
Drain Current
20
Tc = –25 °C
10
25 °C
75 °C
5
2
V DS = 10 V
Pulse Test
1
0.5
0.1
0.3
1
3
10
Drain Current I D (A)
30
100
2SK2418 L , 2SK2418 S
Typical Capacitance vs.
Drain to Source Voltage
Body–Drain Diode Reverse
Recovery Time
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
0.1
3000
0
10
0
V DD = 15 V
10 V
5V
80
20
40
60
Gate Charge Qg (nc)
8
4
0
100
Switching Time t (ns)
VDS
V DD = 5 V
10 V
15 V
12
500
V GS (V)
16
10
20
30
40
50
Drain to Source Voltage V DS (V)
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
20
VGS
Crss
10
ID=7A
20
100
30
Dynamic Input Characteristics
30
Coss
300
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
40
Ciss
1000
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
50
VGS = 0
f = 1 MHz
200
Switching Characteristics
t d(off)
100
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
tf
50
tr
20
t d(on)
10
5
0.1
0.3
1
3
Drain Current
10
30
I D (A)
100
2SK2418 L , 2SK2418 S
Reverse Drain Current vs.
Souece to Drain Voltage
20
16
10 V
5V
12
V GS = 0, –5 V
8
4
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ s (t)
Reverse Drain Current I DR (A)
Pulse Test
Tc = 25°C
1
0.3
0.1
0.03
D=1
0.5
0.2
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.02
1
0.0
t
ho
lse
PDM
Pu
1s
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
100 m
PW (S)
1
10
2SK2418 L , 2SK2418 S
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf