2SK2418 L , 2SK2418 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC converter 3 2, 4 12 3 1 1. 2. 3. 4. 3 Gate Drain Source Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2418 L , 2SK2418 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.04 0.05 Ω ID = 4 A VGS = 4 V * ———————————————————————— — 0.05 0.07 Ω ID = 4 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 810 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 600 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 155 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 4 A ———————————————————————————————— Rise time tr — 90 — ns ———————————————————————————————— Turn–off delay time td(off) — 150 — ns VGS = 4 V RL = 2.5 Ω ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 0.9 — V IF = 7 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 60 — ns IF = 7 A, VGS = 0, diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2SK2418 L , 2SK2418 S Power vs. Temperature Derating 50 I D (A) 20 20 10 5 10 s m s (1 sh ot ) n (T 2 Operation in this area is limited by R DS(on) m tio c = 25 ) °C 50 100 Case Temperature 150 Ta = 25 °C 0.5 0.5 1 2 5 10 20 50 Drain to Source Voltage V DS (V) 200 Tc (°C) Typical Output Characteristics Typical Transfer Characteristics 20 Pulse Test 2V 12 8 4 V DS = 10 V Pulse Test (A) 10 V 6V 4V 2.5 V VGS = 1.5 V ID 16 20 Drain Current I D (A) 1 = 1 0 Drain Current PW ra 10 10 µs 10 0 µs pe O Drain Current 30 Maximum Safe Operation Area C D Channel Dissipation Pch (W) 40 16 12 8 4 –25°C Tc = 75°C 25°C 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2418 L , 2SK2418 S Drain to Source On State Resistance R DS(on) ( Ω ) 0.3 Pulse Test 0.4 0.2 ID=5A 0.1 Static Drain to Source on State Resistance R DS(on) ( Ω) 0 2A 1A 2 4 6 Gate to Source Voltage 8 10 Pulse Test 0.08 I D = 1 A, 2 A, 5 A V GS = 2.5 V 1 A, 2 A, 5 A 0.04 4V 0.02 0 –40 0.2 0.1 VGS = 2.5 V 0.05 4V 0.02 0.01 0.3 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.1 0.06 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.005 0.1 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance |yfs| (S) V DS(on) (V) 0.5 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 1 3 Drain Current 10 30 I D (A) 100 Forward Transfer Admittance vs. Drain Current 20 Tc = –25 °C 10 25 °C 75 °C 5 2 V DS = 10 V Pulse Test 1 0.5 0.1 0.3 1 3 10 Drain Current I D (A) 30 100 2SK2418 L , 2SK2418 S Typical Capacitance vs. Drain to Source Voltage Body–Drain Diode Reverse Recovery Time 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 200 100 50 20 10 5 0.1 3000 0 10 0 V DD = 15 V 10 V 5V 80 20 40 60 Gate Charge Qg (nc) 8 4 0 100 Switching Time t (ns) VDS V DD = 5 V 10 V 15 V 12 500 V GS (V) 16 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 20 VGS Crss 10 ID=7A 20 100 30 Dynamic Input Characteristics 30 Coss 300 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 40 Ciss 1000 di/dt = 20 A/µs V GS = 0, Ta = 25°C 50 VGS = 0 f = 1 MHz 200 Switching Characteristics t d(off) 100 V GS = 4 V, V DD = 10 V PW = 5 µs, duty < 1 % tf 50 tr 20 t d(on) 10 5 0.1 0.3 1 3 Drain Current 10 30 I D (A) 100 2SK2418 L , 2SK2418 S Reverse Drain Current vs. Souece to Drain Voltage 20 16 10 V 5V 12 V GS = 0, –5 V 8 4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Reverse Drain Current I DR (A) Pulse Test Tc = 25°C 1 0.3 0.1 0.03 D=1 0.5 0.2 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 0.0 t ho lse PDM Pu 1s D= PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2418 L , 2SK2418 S Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 4V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf