2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 12 2, 4 12 3 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Avalanche current IAP*** –5 A ——————————————————————————————————————————— Avalanche energy EAR*** 2.1 mJ ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SJ279 L , 2SJ279 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.18 0.20 Ω ID = –3 A VGS = –10 V * ———————————————————————— — 0.23 0.27 Ω ID = –3 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5 — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 690 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 340 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 110 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = –3 A ———————————————————————————————— Rise time tr — 35 — ns ———————————————————————————————— Turn–off delay time td(off) — 125 — ns VGS = –10 V RL = 10 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — –1.2 — V IF = –5 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 140 — µs IF = –5 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2SJ279 L , 2SJ279 S Maximum Safe Operation Area ) s (o n S Pch (W) 10µs ra c I D (A) –6 –3V VGS = –2.5 V –2 –4 –6 –8 25 ) Ta = 25°C –2 –5 –10 –20 –50 –100 Typical Transfer Characteristics Pulse Test VDS = –10 V Drain Current I D (A) –3.5V 0 –0.3 –1 Pulse Test –2 = °C –5 –4 (T Drain to Source Voltage V DS (V) –4V –8 ) n –1 ot tio Typical Output Characteristics –10V –5V Sh Drain Current I D (A) O pe –2 (1 Channel Dissipation C s m –10 200 150 Tc (°C) s 10 D –0.5 50 100 Case Temperature s –5 = 10 1m PW 20 0µ 30 –10 10 O 0 Drain Current n io at r pe D –30 –20 lim in ite thi d sa by re R ai Power vs. Temperature Derating 40 –4 –3 –2 –1 Tc = 75°C 25°C –25°C –10 Drain to Source Voltage V DS (V) 0 –1 –2 –3 –4 Gate to Source Voltage VGS (V) –5 2SJ279 L , 2SJ279 S –1.6 –1.2 I D = –5 A –0.8 –2 A –0.4 –1 A 0 Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.4 0.3 I D = –5 A –1, –2 A –4 V –5 A 0.2 –1, –2 A 0.1 0 –40 VGS = –10 V 0 40 80 120 Case Temperature Tc (°C) 160 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.5 VGS = –4 V 0.2 –10 V 0.1 –0.1 –0.2 –10 –2 –4 –6 –8 Gate to Source Voltage VGS (V) 0.5 Static Drain to Source on State Resistance R DS(on) ( Ω) 1 Static Drain to Source on State Resistance R DS(on) (Ω) Pulse Test –0.5 –1 –2 –5 –10 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current 20 Pulse Test VDS = –10 V 10 Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) –2.0 Drain to Source Saturation Voltage vs. Gate to Drain Voltage 5 Tc = –25°C 25°C 75°C 2 1 0.5 –0.1 –0.2 –0.5 –1 –2 Drain Current I D (A) –5 –10 2SJ279 L , 2SJ279 S 0, 5 V –3 –2 –1 0 500 Switching Time t (ns) Reverse Drain Current I DR (A) Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test VGS = –10 V –4 –5 V 200 td (off) 100 tf 50 tr 20 td (on) 10 100 50 20 10 5 –0.1 –0.2 –0.5 –1 –2 –5 Reverse Drain Current I DR (A) –10 –1 –2 –5 –10 Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 Ciss 300 Coss 100 Crss 30 di/dt = 50 A/µs , VGS = 0 Ta = 25°C –0.5 Drain Current I D (A) Capacitance C (pF) 200 VGS = –10 V , V DD=: –30 V PW = 2µs , duty < =1 % 5 –0.1 –0.2 –2 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage V SD (V) Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Switching Characteristics 10 0 VGS = 0 f = 1 MHz –10 –20 –30 –40 Drain to Source Voltage V DS (V) –50 2SJ279 L , 2SJ279 S Dynamic Input Characteristics –20 –4 V DD = –10 V –25 V –50 V –40 VDS –12 –60 I D = –5 A VGS –80 –100 0 –8 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) V DD = –10 V –25 V –50 V Repetive Avalanche Energy E AR (mJ) 0 0 8 16 24 –16 32 –20 40 2.5 Maximum Avalanche Energy vs. Channel Temperature Derationg I AP = –5 A V DD = –25 V duty < 0.1 % Rg > = 50 Ω 2.0 1.5 1.0 0.5 Gate Charge Qg (nc) 0 25 75 50 100 125 Channel Temperature Tch (°C) 150 Avalanche Test Circuit and Waveform V DS Monitor EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin –15 V 50Ω 0 VDD 2SJ279 L , 2SJ279 S Normalized Transient Thermal Impendance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 0.3 0.1 0.03 D=1 0.5 0.2 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e uls 1 0.0 PDM P ot D= h 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit and Waveform Vin 10% Vout Monitor Vin Monitor D.U.T. 90% RL 90% 90% Vin –10 V 50Ω V DD = –30 V Vout t d (on) 10% tr t d (off) 10% tf