ETC 2SJ279

2SJ279 L , 2SJ279 S
Silicon P Channel MOS FET
Application
DPAK–1
4
High speed power switching
4
Features
•
•
•
•
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
12
2, 4
12
3
3
1
1. Gate
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
–60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
–5
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–20
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–5
A
———————————————————————————————————————————
Avalanche current
IAP***
–5
A
———————————————————————————————————————————
Avalanche energy
EAR***
2.1
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
2SJ279 L , 2SJ279 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
ID = –10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
–100
µA
VDS = –50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.25
V
ID = –1 mA, VDS = –10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.18
0.20
Ω
ID = –3 A
VGS = –10 V *
————————————————————————
—
0.23
0.27
Ω
ID = –3 A
VGS = –4 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
3.0
5
—
S
ID = –3 A
VDS = –10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
690
—
pF
VDS = –10 V
————————————————————————————————
Output capacitance
Coss
—
340
—
pF
VGS = 0
————————————————————————————————
Reverse transfer capacitance
Crss
—
110
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
15
—
ns
ID = –3 A
————————————————————————————————
Rise time
tr
—
35
—
ns
————————————————————————————————
Turn–off delay time
td(off)
—
125
—
ns
VGS = –10 V
RL = 10 Ω
————————————————————————————————
Fall time
tf
—
75
—
ns
———————————————————————————————————————————
Body–drain diode forward
voltage
VDF
—
–1.2
—
V
IF = –5 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
recovery time
trr
—
140
—
µs
IF = –5 A, VGS = 0,
diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test
2SJ279 L , 2SJ279 S
Maximum Safe Operation Area
)
s
(o
n
S
Pch (W)
10µs
ra
c
I D (A)
–6
–3V
VGS = –2.5 V
–2
–4
–6
–8
25
)
Ta = 25°C
–2
–5
–10 –20
–50 –100
Typical Transfer Characteristics
Pulse Test
VDS = –10 V
Drain Current
I D (A)
–3.5V
0
–0.3
–1
Pulse Test
–2
=
°C
–5
–4
(T
Drain to Source Voltage V DS (V)
–4V
–8
)
n
–1
ot
tio
Typical Output Characteristics
–10V –5V
Sh
Drain Current I D (A)
O
pe
–2
(1
Channel Dissipation
C
s
m
–10
200
150
Tc (°C)
s
10
D
–0.5
50
100
Case Temperature
s
–5
=
10
1m
PW
20
0µ
30
–10
10
O
0
Drain Current
n
io
at
r
pe
D
–30
–20
lim in
ite thi
d sa
by re
R ai
Power vs. Temperature Derating
40
–4
–3
–2
–1
Tc = 75°C
25°C
–25°C
–10
Drain to Source Voltage V DS (V)
0
–1
–2
–3
–4
Gate to Source Voltage VGS (V)
–5
2SJ279 L , 2SJ279 S
–1.6
–1.2
I D = –5 A
–0.8
–2 A
–0.4
–1 A
0
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
0.4
0.3
I D = –5 A
–1, –2 A
–4 V
–5 A
0.2
–1, –2 A
0.1
0
–40
VGS = –10 V
0
40
80
120
Case Temperature Tc (°C)
160
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.5
VGS = –4 V
0.2
–10 V
0.1
–0.1 –0.2
–10
–2
–4
–6
–8
Gate to Source Voltage VGS (V)
0.5
Static Drain to Source on State
Resistance R DS(on) ( Ω)
1
Static Drain to Source on State
Resistance R DS(on) (Ω)
Pulse Test
–0.5
–1
–2
–5
–10
Drain Current I D (A)
Forward Transfer Admittance vs. Drain Current
20
Pulse Test
VDS = –10 V
10
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–2.0
Drain to Source Saturation Voltage vs.
Gate to Drain Voltage
5
Tc = –25°C
25°C
75°C
2
1
0.5
–0.1 –0.2
–0.5
–1
–2
Drain Current I D (A)
–5
–10
2SJ279 L , 2SJ279 S
0, 5 V
–3
–2
–1
0
500
Switching Time t (ns)
Reverse Drain Current I DR (A)
Reverse Drain Current vs. Source to Drain Voltage
–5
Pulse Test
VGS = –10 V
–4
–5 V
200
td (off)
100
tf
50
tr
20
td (on)
10
100
50
20
10
5
–0.1 –0.2
–0.5
–1
–2
–5
Reverse Drain Current I DR (A)
–10
–1
–2
–5
–10
Typical Capacitance vs. Drain to Source Voltage
10000
3000
1000
Ciss
300
Coss
100
Crss
30
di/dt = 50 A/µs , VGS = 0
Ta = 25°C
–0.5
Drain Current I D (A)
Capacitance C (pF)
200
VGS = –10 V , V DD=: –30 V
PW = 2µs , duty <
=1 %
5
–0.1 –0.2
–2
–0.4
–0.8
–1.2 –1.6
Source to Drain Voltage V SD (V)
Body to Drain Diode Reverse Recovery Time
500
Reverse Recovery Time trr (ns)
Switching Characteristics
10
0
VGS = 0
f = 1 MHz
–10
–20
–30
–40
Drain to Source Voltage V DS (V)
–50
2SJ279 L , 2SJ279 S
Dynamic Input Characteristics
–20
–4
V DD = –10 V
–25 V
–50 V
–40
VDS
–12
–60
I D = –5 A
VGS
–80
–100
0
–8
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
V DD = –10 V
–25 V
–50 V
Repetive Avalanche Energy E AR (mJ)
0
0
8
16
24
–16
32
–20
40
2.5
Maximum Avalanche Energy vs.
Channel Temperature Derationg
I AP = –5 A
V DD = –25 V
duty < 0.1 %
Rg >
= 50 Ω
2.0
1.5
1.0
0.5
Gate Charge Qg (nc)
0
25
75
50
100
125
Channel Temperature Tch (°C)
150
Avalanche Test Circuit and Waveform
V DS
Monitor
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
–15 V
50Ω
0
VDD
2SJ279 L , 2SJ279 S
Normalized Transient Thermal Impendance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
0.3
0.1
0.03
D=1
0.5
0.2
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.02
e
uls
1
0.0
PDM
P
ot
D=
h
1s
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit and Waveform
Vin
10%
Vout
Monitor
Vin Monitor
D.U.T.
90%
RL
90%
90%
Vin
–10 V 50Ω
V DD
= –30 V
Vout
t d (on)
10%
tr
t d (off)
10%
tf