Rev 2: Aug 2004 AO7403, AO7403L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. AO7403L (Green Poduct) is offered in a lead-free package. VDS (V) = -20V ID = -0.7A RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V) D SC-70 (SOT-323) Top View G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 0.22 TJ, TSTG t ≤ 10s Steady-State Steady-State A -3 -55 to 150 Symbol A V 0.35 PD TA=70°C A ±8 -0.5 ID IDM TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V -0.7 TA=70°C Pulsed Drain Current B Power Dissipation A Maximum -20 RθJA RθJL Typ 300 350 280 °C Max 360 425 320 Units °C/W °C/W °C/W AO7403, AO7403L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Conditions Min ID=-250µA, VGS=0V -20 -0.5 Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time µA µA -0.6 ±10 -0.9 388 542 519 470 660 625 mΩ 666 1.7 900 mΩ -0.86 -1 -0.4 V A V -3 TJ=125°C VGS=-2.5V, ID=-0.6A VGS=-1.8V, ID=-0.5A VDS=-5V, ID=-0.7A Forward Transconductance Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Units -1 -5 TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.7A Max V VDS=-16V, VGS=0V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Typ A mΩ S VGS=0V, VDS=-10V, f=1MHz 114 17 pF pF VGS=0V, VDS=0V, f=1MHz 14 12 pF Ω 1.44 0.14 nC nC 0.35 6.5 6.5 18.2 5.5 10 nC ns ns ns ns VGS=-4.5V, VDS=-10V, ID=-0.7A VGS=-4.5V, VDS=-10V, RL=14.3Ω, RGEN=3Ω IF=-0.7A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-0.7A, dI/dt=100A/µs 3 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO7403, AO7403L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 6 -8V -6V 25°C -4.5V VDS=-5V -4V 3 125°C -3.5V -ID(A) -ID (A) 4 -3V 2 -2.5V 2 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 0.5 1 1000 2 1.6 800 Normalized On-Resistance 900 RDS(ON) (mΩ) 1.5 VGS=-1.8V 700 VGS=-2.5V 600 500 400 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 300 VGS=-1.8V ID=-0.5A 1.4 VGS=-2.5V ID=-0.6A 1.2 VGS=-4.5V ID=-0.7A 1 0.8 0 1 2 3 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 900 ID=-0.7A 800 1.0E-01 600 -IS (A) RDS(ON) (mΩ) 125°C 1.0E-02 700 125°C 25°C 1.0E-03 1.0E-04 500 25°C 1.0E-05 400 1.0E-06 300 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO7403, AO7403L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=-10V ID=-0.7A Capacitance (pF) -VGS (Volts) 4 3 2 1 0 Ciss 150 100 Coss Crss 50 0 0.0 0.5 1.0 1.5 2.0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 10 10µs Power (W) -ID (Amps) RDS(ON) limited 1ms 1.00 0.1 10ms 8 6 4 1s 10s 2 DC 0 0.001 0.01 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=360°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 20 TJ(Max)=150°C TA=25°C 12 10.00 10 15 14 TJ(Max)=150°C TA=25°C 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 0.10 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 Document No. Version PD-00128 rev C AO7403 Marking Description Title Standard product PNW LT PNW LT SC-70(3L) PACKAGE MARKING DESCRIPTION Green product NOTE: P - Product number code N - Assembly&Foundry location code W - Year and Week code LT - Assembly lot code. PART NO. DESCRIPTION CODE (P&N) 3&N Standard product AO7403 3&N AO7403L Green product Rev. A RECOMMENDATION OF LAND PATTERN UNIT: mm θ SYMBOLS A A1 A2 b c D E e e1 E1 L θ MAX 1.10 0.10 1.00 0.30 0.22 2.15 2.40 0.043 0.010 0° 0.00 0.028 0.006 0.003 0.073 0.071 MIN 1.4 0.46 8° NOM −−− −−− 0.035 −−− −−− 0.083 0.091 0.026 BSC 0.051 BSC 0.051 0.014 4° 0.055 0.018 8° MAX 0.043 0.004 0.039 0.012 0.009 0.085 0.094 DIMENSIONS IN INCHES NOTE 1.ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS 4.DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM .ie:REVERSE TRIM/FORM. 5. DIMENSION L IS MEASURED IN GAUGE PLANE 6. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. NOM −−− −−− 0.9 −−− −−− 2.10 2.30 0.65 BSC 1.30 BSC 1.30 0.36 4° DIMENSIONS IN MILLIMETERS MIN 0.00 0.7 0.15 0.08 1.85 1.80 1.1 0.26 0° SC-70 3L Tape and Reel Data SC-70 3L Carrier Tape SC-70 3L Reel SC-70 3L Tape Leader / Trailer & Orientation