Jan 2003 AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. VDS (V) = 20V ID = 7A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 33mΩ (VGS = 2.5V) RDS(ON) < 42mΩ (VGS = 1.8V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D2 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS ±8 V ID 6 IDM 40 7 TA=70°C B TA=25°C Power Dissipation Units V TA=25°C Continuous Drain Current A Pulsed Drain Current Maximum 20 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 2 PD TA=70°C W 1.44 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO9926A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.3 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C 0.5 0.8 V 21.6 26 29.2 36 VGS=2.5V, ID=5A 26.4 33 mΩ VGS=1.8V, ID=4A 33.3 42 mΩ TJ=125°C Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA nA gFS Coss 5 100 VGS=4.5V, ID=7A IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=7A A 22 0.76 mΩ S 1 V 3 A 1050 pF 163 pF 129 pF 4 Ω 15.2 nC 1 nC Qgd Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time IF=5A, dI/dt=100A/µs 21 ns Qrr Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.1 nC VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω 2 9 ns 56.5 ns 13.2 ns A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO9926A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 2.5V 4.5V 20 2V 25 12 15 ID(A) ID (A) 20 VDS=5V 16 VDS=16V, VGS=0V VGS=1.5V 8 10 125°C 4 5 0 0 0 1 2 3 4 5 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 45 2.4 1.8 Normalized On-Resistance 40 VGS=1.8V 35 RDS(ON) (mΩ) 25°C 30 VGS=2.5V 25 20 VGS=4.5V 15 10 ID=7A 1.6 VGS=4.5V 1.4 1.2 VGS=2.5V VGS=1.8V 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 1.0E+00 50 125°C ID=7A IS (A) RDS(ON) (mΩ) 1.0E-01 40 125°C 30 25°C 1.0E-02 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2 4 6 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO9926A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 5 VDS=15V ID=7A 1600 VGS (Volts) VDS=16V, VGS=0V 3 2 1400 Capacitance (pF) 4 1200 Ciss 1000 800 600 Coss 400 1 Crss 200 0 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 20 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 1ms 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 0.1 1 10 0 0.001 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 10s 0.1 ZθJA Normalized Transient Thermal Resistance 15 40 Power (W) ID (Amps) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION LOGO 9 9 2 6 A FAYWLC NOTE: LOGO 9926A F A Y W LC RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO9926A 9926A UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data