August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1 D2 D1/D2 S2 S2 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 V 30 1.5 W 1.08 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 8 TA=25°C Power Dissipation A S2 RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 20 Gate-Body leakage current VDS=0V, VGS=±12V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=8A 11.5 14 mΩ VGS=2.5V, ID=4A 15.4 19 mΩ VGS=1.8V, ID=3A 22.2 27 mΩ VDS=5V, ID=8A DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A VGS=4.5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Rg V 16 VSD Reverse Transfer Capacitance nA 1 13 Forward Transconductance Crss 100 10 gFS Output Capacitance 0.75 13.3 TJ=125°C Coss µA 25 Gate Threshold Voltage IS Units 10 TJ=55°C IGSS Static Drain-Source On-Resistance Max V VDS=16V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8A mΩ 36 0.73 S 1 V 2.4 A 1810 pF 232 pF 200 pF 1.6 Ω 19.8 nC 1.8 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 3.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=10V, RL=1.3Ω, RGEN=3Ω 5.9 ns 44 ns 7.7 ns IF=8A, dI/dt=100A/µs 22 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 9.8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO8802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V 2V VDS=5V 25 30 20 ID(A) ID (A) 25 20 15 15 10 125°C 10 VGS=1.5V 5 5 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.6 VGS=4.5V ID=5A Normalized On-Resistance VGS=1.8V 25 RDS(ON) (mΩ) 2.5 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 5 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 35 1.0E+00 30 125°C ID=5A 1.0E-01 25 IS (A) RDS(ON) (mΩ) 25 20 125°C 15 1.0E-02 25°C 1.0E-03 10 25°C 5 1.0E-04 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO8802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 0 0 4 8 12 16 Crss 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 20 TJ(Max)=150°C TA=25°C 100µs 1ms 10µs 30 Power (W) RDS(ON) limited 10ms 1s 1.0 TJ(Max)=150°C TA=25°C 0.1s 0.1 DC 1 0 0.001 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 10s 0.1 Z θJA Normalized Transient Thermal Resistance 15 40 ID (Amps) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA TSSOP-8 Package Data SEMICONDUCTOR, INC. SYMBOLS A A1 A2 b c D E E1 e L y θ DIMENSIONS IN MILLIMETERS MIN −−− 0.05 0.80 0.19 0.09 2.90 4.30 0.45 −−− 0° θ NOM −−− −−− 1.00 −−− −−− 3.00 6.40 BSC 4.40 0.65 BSC 0.60 −−− −−− DIMENSIONS IN INCHES MAX 1.20 0.15 1.05 0.30 0.20 3.10 MIN −−− 0.002 0.031 0.007 0.004 0.114 4.50 0.169 0.75 0.10 8° 0.018 −−− 0° NOM −−− −−− 0.039 −−− −−− 0.118 0.252 BSC 0.173 0.0259 (REF) 0.024 −−− −−− MAX 0.047 0.006 0.041 0.012 0.008 0.122 0.177 0.030 0.004 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN NOTE: LOGO - AOS LOGO 8802 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION W - WEEK CODE. LN - ASSEMBLY LOT CODE TSSOP-8 PART NO. CODE PART NO. AO8802 CODE 8802 PART NO. CODE PART NO. CODE UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. TSSOP-8 Carrier Tape TSSOP-8 Reel TSSOP-8 Tape Leader / Trailer & Orientation TSSOP-8 Tape and Reel Data