AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Green Product ordering option. AO4447 and AO4447L are electrically identical. VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -60 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -13.6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -15 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W AO4447 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250μA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250μA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 -1.3 -1.6 V 6.7 8 9.4 12 VGS=-4V, ID=-13A 9.2 12 VDS=-5V, ID=-15A 60 TJ=125°C gFS Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Gate Source Charge A 5500 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, 15A I D=- mΩ mΩ S -0.69 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance μA μA VSD Reverse Transfer Capacitance -10 ±10 Static Drain-Source On-Resistance Coss V TJ=55°C VGS=-10V, I D=-15A Crss Units -1 Zero Gate Voltage Drain Current IS Max VDS=-30V, VGS=0V IDSS RDS(ON) Typ -1 V 5.5 A 6600 pF 745 pF 473 pF 3.1 4 Ω 88.8 120 nC 45.2 60 nC 10.1 nC Gate Drain Charge 19.4 nC Turn-On DelayTime 12 ns Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=1.7Ω, RGEN=3Ω 11.5 ns 100 ns 46.6 67.7 40 trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/μs Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/μs ns 60 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1. June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -3.5V 50 25 -10V VDS=-5V 20 -3V 125°C -4V 40 -ID(A) -ID (A) 15 30 10 20 25°C VGS=-2.5V 10 5 0 0 0 1 2 3 4 1 5 1.5 12 2.5 3 1.6 Normalized On-Resistance RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4V 10 8 VGS=-10V VGS=-4V ID=-13A 1.4 VGS=-10V ID=-15A 1.2 1 0.8 6 0 5 10 15 20 0.6 25 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 30 ID=-15A 25 1.0E+00 125°C 1.0E-01 20 -IS (A) RDS(ON) (mΩ) -25 15 125°C 1.0E-02 25°C 1.0E-03 10 5 1.0E-04 25°C 1.0E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=-15V ID=-15A 7000 Ciss 6000 Capacitance (pF) -VGS (Volts) 8 6 4 5000 4000 3000 Crss Coss 2000 2 1000 0 0 0 20 40 60 80 100 0 5 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 100μs 10ms 0.1s 1s 1.0 10s TJ(Max)=150°C TA=25°C 1 60 40 20 DC 0 0.001 0.1 0.1 30 TJ(Max)=150°C TA=25°C 80 Power (W) -ID (Amps) 100 10μs 1ms 10.0 10 10 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 0.1 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SEMICONDUCTOR, LTD. 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