P55N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 10mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current 1 2 Repetitive Avalanche Energy VGS ±20 V 55 36 140 IAR 20 L = 0.1mH EAS 140 L = 0.05mH EAR 5.6 TC = 25 °C Power Dissipation UNITS IDM Avalanche Current Avalanche Energy LIMITS ID TC = 100 °C Pulsed Drain Current SYMBOL Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) mJ 60 PD TC = 100 °C A W 38 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.5 Junction-to-Ambient RθJA 65 Case-to-Heatsink RθCS UNITS °C / W 0.7 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TJ = 125 °C 250 Drain-Source Breakdown Voltage Gate Threshold Voltage 1 V 1.5 3 nA µA MAY-24-2001 P55N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM 1 On-State Drain Current ID(ON) Drain-Source On-State 1 Resistance RDS(ON) 1 Forward Transconductance VDS = 10V, VGS = 10V gfs TO-252 (DPAK) 55 A VGS = 7V, ID = 24A 11 14 VGS = 10V, ID = 30A 10 13 VDS = 15V, ID = 30A 16 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 200 Qg 25 Total Gate Charge 2 2 Gate-Source Charge 2 Gate-Drain Charge 2 2700 VGS = 0V, VDS = 15V, f = 1MHz Qgs VDS = 0.5V(BR)DSS, VGS = 10V, 7 Qgd ID = 30A 11 Turn-On Delay Time td(on) 2 tr VDS = 15V, RL = 1Ω 7 td(off) ID ≅ 30A, VGS = 10V, RGS = 2.5Ω 24 Rise Time 2 Turn-Off Delay Time 2 Fall Time pF 500 nC 7 tf nS 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Pulsed Current 3 1 Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS 55 ISM 150 VSD IF = IS, VGS = 0V trr IRM(REC) IF = IS, dlF/dt = 100A / µS Qrr 1.3 A V 37 nS 200 A 0.043 µC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P55N02LD”, DATE CODE or LOT # 2 MAY-24-2001 P55N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 (DPAK) TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 9.35 10.1 H B 2.2 2.4 I 6.4 6.6 C 0.48 0.6 J 5.2 5.4 D 0.89 1.5 K 0.6 1 E 0.45 0.6 L 0.64 0.9 F 0.03 0.23 M 4.4 4.6 G 6 6.2 N 3 0.8 MAY-24-2001