ETC P2504BDG

NIKO-SEM
N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor ( Preliminary )
TO-252 (DPAK)
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
40V
25mΩ
12A
1. GATE
2. DRAIN
3. SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
TC = 25 °C
Continuous Drain Current
12
ID
TC = 100 °C
10
Pulsed Drain Current 1
IDM
TC = 25 °C
Power Dissipation
A
45
41
PD
TC = 100 °C
W
32
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
-55 to 150
TL
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
3
°C / W
Junction-to-Ambient
RθJA
75
°C / W
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
40
VGS(th)
VDS = VGS, ID = 250µA
1
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
±250
Zero Gate Voltage Drain Current
IDSS
VDS = 32V, VGS = 0V
1
VDS = 30V, VGS = 0V, TC = 125 °C
10
Gate Threshold Voltage
On-State Drain Current 1
Drain-Source On-State Resistance1
ID(ON)
RDS(ON)
VDS = 10V, VGS = 10V
V
2.0
3.0
45
µA
A
VGS = 4.5V, ID = 10A
35
45
VGS = 10V, ID = 12A
21
25
1
nA
mΩ
JAN-17-2005
N-Channel Logic Level Enhancement P2504BDG
NIKO-SEM
Mode Field Effect Transistor ( Preliminary )
Forward Transconductance1
gfs
VDS = 10V, ID = 12A
TO-252 (DPAK)
Lead-Free
18
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
55
Total Gate Charge
Qg
16
Gate-Source Charge2
Qgs
VDS = 0.5V (BR)DSS, VGS = 10V,
2.5
Gate-Drain Charge2
Qgd
ID = 12A
2.1
2
2
Turn-On Delay Time
tr
Turn-Off Delay Time2
td(off)
Fall Time2
VGS = 0V, VDS = 10V, f = 1MHz
td(on)
2
Rise Time
760
pF
165
nC
2.1
4.2
VDS = 20V, RL = 1Ω
7.2
14
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
11.6
21.0
3.5
7.2
tf
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
12
Pulsed Current 3
ISM
40
Forward Voltage1
VSD
IS = IS, VGS = 0V
Reverse Recovery Time
trr
IF = 5 A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1.2
A
V
14.5
nS
7.2
nC
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2
REMARK: THE PRODUCT MARKED WITH “P2504BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2
JAN-17-2005
N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor ( Preliminary )
TO-252 (DPAK)
Lead-Free
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125°C
10
Is - Reverse Drain Current(A)
NIKO-SEM
25°C
1
-55°C
0.1
0.01
0.001
0
3
0.2
0.4
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
JAN-17-2005
NIKO-SEM
N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor ( Preliminary )
4
TO-252 (DPAK)
Lead-Free
JAN-17-2005
N-Channel Logic Level Enhancement P2504BDG
NIKO-SEM
Mode Field Effect Transistor ( Preliminary )
TO-252 (DPAK)
Lead-Free
TO-252 (DPAK) MECHANICAL DATA
mm
mm
Dimension
Dimension
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.35
10.1
H
0.8
B
2.2
2.4
I
6.4
6.6
C
0.48
0.6
J
5.2
5.4
D
0.89
1.5
K
0.6
1
E
0.45
0.6
L
0.64
0.9
F
0.03
0.23
M
4.4
4.6
G
6
6.2
N
D
C
E
F
B
A
G
M
XXXXXXXXX
NIKOS
J
I
L
H
K
5
JAN-17-2005