P45N03LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current LIMITS UNITS VGS ±20 V 45 ID TC = 100 °C Pulsed Drain Current SYMBOL 1 Avalanche Current 28 IDM 140 IAR 20 Avalanche Energy L = 0.1mH EAS 140 Repetitive Avalanche Energy2 L = 0.05mH EAR 5.6 TC = 25 °C Power Dissipation Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) mJ 65 PD TC = 100 °C A W 33 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 3 Junction-to-Ambient RθJA 70 Case-to-Heatsink RθCS UNITS °C / W 0.7 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 0.8 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TJ = 125 °C 250 Gate Threshold Voltage 1 V 1.2 2.5 nA µA AUG-13-2004 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 VDS = 10V, VGS = 10V gfs P45N03LTG TO-220 Lead Free 45 A VGS = 7V, ID = 18A 20 30 VGS = 10V, ID = 20A 15 28 VDS = 15V, ID = 30A 16 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 100 Qg 25 Total Gate Charge 2 Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time 2 Rise Time2 Turn-Off Delay Time2 Fall Time2 600 VGS = 0V, VDS = 15V, f = 1MHz pF 290 Qgs VDS = 0.5V(BR)DSS, VGS = 10V, 2.9 Qgd ID = 20A 7.0 td(on) nC 7.0 tr VDS = 15V, RL = 1Ω 7.0 td(off) ID ≅ 30A, VGS = 10V, RGS = 2.5Ω 24 tf nS 6.0 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 45 Pulsed Current ISM 150 Forward Voltage1 VSD 3 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = IS, VGS = 0V 1.3 trr IRM(REC) V 37 nS 200 A 0.043 µC IF = IS, dlF/dt = 100A / µS Qrr A Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P45N03LTG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-13-2004 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P45N03LTG TO-220 Lead Free TO-220 (3-Lead) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. A 9.78 10.16 10.54 B 2.61 2.74 2.87 C 20 Min. Typ. Max. H 2.4 2.54 2.68 I 1.19 1.27 1.35 J 4.4 4.6 4.8 D 28.5 28.9 29.3 K 1.14 1.27 1.4 E 14.6 15.0 15.4 L 2.3 2.6 2.9 F 8.4 8.8 9.2 M 0.26 0.46 0.66 G 0.72 0.8 0.88 N 3 7° AUG-13-2004