ETC P3055LSG

P3055LSG
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
TO-263
Lead Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
25
50mΩ
12A
1. GATE
2. DRAIN
3. SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current
1
Avalanche Energy
2
Repetitive Avalanche Energy
UNITS
VGS
±20
V
12
8
IDM
45
L = 0.1mH
EAS
60
L = 0.05mH
EAR
3
TC = 25 °C
Power Dissipation
LIMITS
ID
TC = 100 °C
Pulsed Drain Current
SYMBOL
Operating Junction & Storage Temperature Range
1
Lead Temperature ( /16” from case for 10 sec.)
mJ
43
PD
TC = 100 °C
A
W
15
Tj, Tstg
-55 to 150
TL
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction-to-Case
RθJC
2.6
Junction-to-Ambient
RθJA
60
Case-to-Heatsink
RθCS
UNITS
°C / W
0.6
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0V, ID = 250µA
25
VGS(th)
VDS = VGS, ID = 250µA
0.8
IGSS
VDS = 0V, VGS = ±20V
1
V
1.2
2.5
±250 nA
AUG-13-2004
P3055LSG
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
TO-263
Lead Free
VDS = 20V, VGS = 0V
25
VDS = 20V, VGS = 0V, TJ = 125 °C
250
VDS = 10V, VGS = 10V
gfs
12
µA
A
VGS = 5V, ID = 12A
70
120
VGS = 10V, ID = 12A
50
90
VDS = 15V, ID = 12A
16
mΩ
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
60
Qg
15
Total Gate Charge
2
Gate-Source Charge
Gate-Drain Charge
2
2
Turn-On Delay Time
2
Rise Time2
Turn-Off Delay Time2
Fall Time2
450
VGS = 0V, VDS = 15V, f = 1MHz
pF
200
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
2.0
Qgd
ID = 6A
7.0
td(on)
nC
6.0
tr
VDS = 15V, RL = 1Ω
6.0
td(off)
ID ≅ 12A, VGS = 10V, RGS = 2.5Ω
20
tf
nS
5.0
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
12
Pulsed Current3
ISM
20
Forward Voltage1
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = IS, VGS = 0V
1.5
trr
IRM(REC)
V
30
nS
15
A
0.043
µC
IF = IS, dlF/dt = 100A / µS
Qrr
A
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2
REMARK: THE PRODUCT MARKED WITH “P3055LSG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2
AUG-13-2004
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
3
P3055LSG
TO-263
Lead Free
AUG-13-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
P3055LSG
TO-263
Lead Free
TO-263 (D2PAK) MECHANICAL DATA
mm
mm
Dimension
Dimension
Min.
Typ.
Max.
A
14.5
15
15.8
B
4.2
C
1.20
D
Min.
Typ.
Max.
H
1.0
1.5
1.8
4.7
I
9.8
1.35
J
6.5
K
1.5
2.8
E
0.3
F
-0.102
G
8.5
0.4
9
0.5
L
0.7
0.203
M
4.83
9.5
N
4
10.3
1.4
5.08
5.33
AUG-13-2004