RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz UF2820R Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C 1 Symbol 1 Rating Units Drain-SourceVoltage VOS 6.5 V Gate-Source Voltage VGS 20 V Drain-Source Current IOS 4 A Power Dissipation PO 61 w Junction Temperature T 200 “C Parameter StorageTemperature TST0 -55 to +150 “C Thermal Resistance 8JC 2.66 “C/W Electrical Characteristics at 25°C V,,=28.0 V, F=l .OMHz Input Capacitance Output Capacitance Cass 30 PF V,,=28.0 V, F=l .OMHz Reverse Capacitance CRss 8 PF V,,=28.0 V, F=l .OMHz Power Gain GP 10 - dB V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 W, F=500 MHz Drain Efficiency 00 50 - % V,,=28.0 V, I,,=1 00.0 mA, P,s20.0 W, F=500 MHz VSWR-T - 2O:l - V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz Load Mismatch Tolerance Specifications Subject to Change Without Notice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, UF2820R 2OW, 28V v2.00 Typical Broadband Performance Curves EFFICIENCY GAIN vs FREQUENCY I’,,=28 VD,=28 V I,,=1 00 mA PO,,,=20 W vs FREQUENCY V IDD=l 00 mA PO,=20 W ‘OF .T 10 I 100 200 300 FREQUENCY POWER OUTPUT 25 400 5w 200 100 V I,,=100 0.3 0.5 (MHz) POWER OUTPUT vs POWER INPUT vs POWER INPUT V,,=28 500 300 FREQUENCY (MHz) mA V,,=28 25 0 V I,,=1 00 mA 01 0.1 0.2 1.0 1.5 2.0 0.1 0.3 02 NOISE FIGURE 1.0 1.5 2.0 vs FREQUENCY VDo=28 V I,,=1 Specifications 0.5 POWER INPUT(W) POWER INPUT (W) 00 mA Subject to Change Without Notice. IWA-COM, Inc. North America: Tel. Fax (800) (800) 366-2266 618-8883 m Asia/Pacific: Tel. Fax +81 (03) 3226-1671 +81 (03) 3226-1451 m Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, U F2820R 2OW, 28V v2.00 Typical Device Impedance Frequency (MHz) z,, (OHMS) z LoAD (OHMS) 100 8.0-j 12.O+j6.0 200 5.5 - j 8.0 9.3 + j 6.0 300 4.0 - j 3.8 6.8 + j 5.5 400 3.0 - j 2.0 4.5 + J 4.5 500 2.0 + J 1.O 3.0 + j 3.0 16.0 V,,=28 V, I,,=100 mA, P,,,=20.0 Watts Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD is the optimum series equivalent load impedance as measured from drain to source. VDD A RF Test Fixture P VGG J3 0 Q - RF IN .Jl PARTS LlS7 c1,c&c10 CAPACITOR 1ooOpF c7 Specifications cz.c5 CAPACITOR 1QF M CAPACITOR 2DpF w CAPACiTOR 25pF ca CAPACVOR S4OpF c9 FEEDTHROUGH Cl1 MONOLITHIC Cl.2 ELEcTROLYnC CAPA’XOR CERAMIC SOOPF CAPACITOR CAPACTOR 0.63 HAIRPIN. 0.1 uF 5OuF 50 VOLTS L1 0.25.X L2 0.25’ X 0.20’ MICROSTRIP NO. 22 AWG LINE L3 0.2SX UNE L4 0.30 X 0.06’ HAIRPIN. ls 6 TURNS OF NC. 20 AWG ON ‘0.30’. CLOSE WOUND 0.40’ MICROSTRIP L6 12 NRNS Rl RESISTOR 07 UF262DR BOARD FPd o.oe NO. 16 AWG OF NO. 20 AWG ON ‘OLW. CLOSE WOUND 72K OWS 025 WAlT Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020