Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz). 1,2 • 4 5 Q1 D1 6,7 9 Product Summary Output Current in a Typical 5.0 kHz Motor Drive 14 ARMS with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80%. Q2 D2 11,12 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. IMS-1 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 42 23 120 120 15 120 10 ± 20 2500 83 33 -40 to +150 V A µs V VRMS W °C 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module C-407 To Order Typ. Max. — — 0.1 20 (0.7) 1.5 2.0 — — Units °C/W g (oz) Revision 2 Previous Datasheet Index Next Data Sheet CPU165MM Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp.Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.62 — V/°C VGE = 0V, IC = 1.0mA — 1.8 2.0 IC = 35A V GE = 15V — 2.3 — V IC = 60A — 2.0 — IC = 35A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -14 — mV/°C VCE = VGE, IC = 250µA 11 20 — S VCE = 100V, I C = 35A — — 250 µA VGE = 0V, V CE = 600V — — 6500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 25A — 1.2 1.5 IC = 25A, T J = 150°C — — ±500 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. Min. — — — — — — — — — — 10 Typ. 120 25 40 78 110 340 265 2.1 4.0 6.1 — — — — — — — — — — — — — — — — — 80 110 610 440 9.4 2900 230 30 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 180 IC = 35A 38 nC VCC = 400V 60 — TJ = 25°C — ns IC = 35A, V CC = 480V 510 VGE = 15V, R G = 5.0Ω 400 Energy losses include "tail" and — diode reverse recovery. — mJ 9.5 — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 5.0Ω, VCPK < 500V — TJ = 150°C, — ns IC = 35A, V CC = 480V — VGE = 15V, R G = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — VGE = 0V — pF VCC = 30V — ƒ = 1.0MHz 75 ns TJ = 25°C 160 TJ = 125°C I F = 25A 10 A TJ = 25°C 15 TJ = 125°C V R = 200V 375 nC TJ = 25°C 1200 TJ = 125°C di/dt = 200A/µs — A/µs TJ = 25°C — TJ = 125°C VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0Ω. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Refer to Section D for the following: Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13 C-408 To Order