GaAs Hall Element HG-106A Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. •High-stability GaAs Hall element. •Ultra mini-mold SMT package. •Shipped in packet-tape reel (4000pcs per reel). Note : It is requested to read and accept "IMPORTANT NOTICE". •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Voltage Vin 8 V Max. Power Dissipation PD 150 mW Operating Temp. Range Topr. –40 to +125 ˚C Storage Temp. Range Tstg. –40 to +150 ˚C •Dimensional Drawing (mm) •Electrical Characteristics(Ta=25˚C) 1.5±0.1 0.9 0.3 Item Symbol Output Hall Voltage VH Input Resistance Rin B=0T, Ic=0.1mA 450 750 Output Resistance Rout B=0T, Ic=0.1mA 1,000 2,000 Offset Voltage Vos B=0T, Vc=6V –16 +16 mV Temp. Coefficient of VH VH 25˚C to 125˚C -0.06 %/˚C Conditions B=0.1T, Vc=6V Min. 150 Typ. Max. Unit 190 mV 0.3 0.3 1 4 N 1.5±0.1 2.5±0.2 0 to 0.1 5˚ 3˚ 2 3 K B=0.1/0.5T, Ic=0.5mA %/˚C 2 % 0.6±0.05 Notes : 1. VH = VHM – Vos (VHM:meter indication) 1 2) – VH (T1) X 100 2. VH = VH (T1) X VH (T (T2 – T1) 1 Rin (T2) – Rin (T1) X 100 3. Rin = Rin (T1) X (T – T ) 2 3˚ Pinning 5˚ 0.35 Linearity of output Hall voltage 0.3 1 K (B1) – K (B2) 4. K = [K (B1) + K (B2)] / 2 X 100 Input 1(±) 3 Output 2(±) 4 (±) Rin B=0T, Ic=0.1mA (±) Temp. Coefficient of Rin 0.25 0.1 T1 = 25˚C, T2 = 125˚C K= VH IC • B B1 = 0.5T, B2 = 0.1T •Characteristic Curves Allowable Package Power Dissipation (PD–Ta) Power Dissipation(mW) 200 160 120 80 40 0 0 20 40 60 80 100 Ambient Temperature.(˚C) 38 120 140 HG-106A Rin-T 600 700 Ic const Vc const 500 Output Voltage:VH(mV) Input Resistance:Rin( ) b VH-B 800 600 500 400 300 200 Vin, Ic Ic = 10 (mA) Vc = 6 (V) Ta = 25 (˚C) 400 300 c 200 100 100 0 –50 0 50 100 0 0 150 100 Ambient Temperature(˚C) 200 VH-T VH-Vc, VH-Ic 250 250 200 Output Voltage:VH(mV) Output Voltage:VH(mV) Ic const Vc const 150 Vin Ic 100 Ic const Vc const 50 0 50 100 200 B = 0.1 (T) Ta = 25 (˚C) 100 g Ic:(mA) 0 0 150 2 8 10 Vc:(V) 15 Ic const Vc const Vin Offset Voltage:Vos(mV) Offset Voltage:Vos(mV) 6 Vos-Vc, Vos-Ic 6 Ic 4 3 Ic const Vc const 2 B = 0 (mT) Ta = 25 (˚C) 10 Vin j Ic 5 Ic = 10 (mA) Vc = 6 (V) B = 6 (mT) 1 0 -50 4 Ic (mA) Input Current Vc (V) Input Voltage 8 5 Ic 150 Ambient Temperature(˚C) 7 Vin 50 Ic = 10 (mA) Vc = 6 (V) B = 0.1 (T) 0 –50 Vos-T 300 Magnetic Flux Density B (mT) 0 0 50 100 0 150 2 4 6 8 Ic (mA) Input Current Vc (V) Input Voltage Ambient Temperature(˚C) *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=600( ), Vos=6.3(mV), Vc=6(V) 39 Ic:(mA) 10 Vc:(V)