TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 to 52 V Output Voltage (700 mV to 90% VIN) 200 mA Internal P-Channel FET Driver Voltage Feed-Forward Compensation Undervoltage Lockout Programmable Fixed Frequency (35–500 kHz) Operation Programmable Short Circuit Protection Hiccup Overcurrent Fault Recovery Programmable Closed Loop Soft Start 700 mV 1% Reference Voltage External Synchronization Small 8-Pin SOIC (D) and QFN (DRB) Packages APPLICATIONS • • • • • Industrial Control Distributed Power Systems DSL/Cable Modems Scanners Telecom DESCRIPTION The TPS40200 is a flexible non-synchronous controller with a built in 200-mA driver for P-channel FETs. The circuit operates with inputs up to 52 V with a power-saving feature that turns off driver current once the external FET has been fully turned on. This feature extends the flexibility of the device, allowing it to operate with an input voltage up to 52 V without dissipating excessive power. The circuit operates with voltage-mode feedback and has feed-forward input-voltage compensation that responds instantly to input voltage change. The integral 700-mV reference is trimmed to 2%, providing the means to accurately control low voltages. The TPS40200 is available in and 8-pin SOIC and an 8-pin QFN package and supports many of the features of more complex controllers. Clock frequency, soft-start, and overcurrent limit are each easily programmed by a single, external component. The part has undervoltage lockout, and can be easily synchronized to other controllers or a system clock to satisfy sequencing and/or noise-reduction requirements. Major sections in this data sheet include: • Specifications • General Information • Example Applications • Design References TYPICAL APPLICATION 100 VIN R5 C1 C3 RSENSE 2 SS ISNS 7 C5 3 COMP GDRV 6 4 FB Q1 L1 GND 5 VOUT C2 D1 R4 R1 Efficiency - % TPS40200 VDD 8 1 RC C4 R3 VIN = 8 V VIN = 12 V VIN = 16 V 90 80 70 60 R2 C6 VOUT = 5 V 50 0 Figure 1. 12 V to 5 V Buck Converter with 94% Efficiency 0.5 1 1.5 2 Load Current - A 2.5 3 Figure 2. Typical Efficiency of Application Circuit 1 (described in Application 1) 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2006–2008, Texas Instruments Incorporated TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTROSTATIC DISCHARGE (ESD) PROTECTION MAX UNIT Human body model MIN 1500 V CDM 1500 V ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) TPS40200 VDD, ISNS Input voltage range Output voltage range Tstg UNIT 52 RC, FB –0.3 to 5.5 SS –0.3 to 9.0 COMP –0.3 to 9.0 GDRV (VIN –10) to VIN Storage temperature V V –55 to 150 °C 260 °C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD Input voltage 4.5 52 V TA Operating temperature range –40 85 °C ELECTRICAL CHARACTERISTICS –40°C < TA = TJ < 85°C, VDD = 12 V, fOSC = 100 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 689 696 702 TA = 25°C 686 696 703 –40°C < TA < 85°C 679 696 708 –40°C < TA < 125°C 679 696 710 UNIT VOLTAGE REFERENCE COMP = FB, TA = 25°C VFB Feedback voltage 4.5 < VVDD < 52 mV GATE DRIVER Isrc Gate driver pull-up current 125 300 Isnk Gate driver pull-down current 200 300 VGATE Gate driver output voltage 6 8 10 V 1.5 3.0 mA 4.25 4.5 VGATE = (VVDD – VGDRV), for 12 < VDD < 52 mA mA QUIESCENT CURRENT Iqq Device quiescent current fOSC = 300 kHz, Driver not switching, 4.5 < VDD < 52 UNDERVOLTAGE LOCKOUT (UVLO) VUVLO(on) Turn-on threshold VUVLO(off) Turn-off threshold VUVLO(HYST) Hysteresis 2 –40°C < TA < 125°C 3.8 4.05 110 Submit Documentation Feedback 200 275 V mV Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ELECTRICAL CHARACTERISTICS (continued) –40°C < TA = TJ < 85°C, VDD = 12 V, fOSC = 100 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 65 105 170 UNIT SOFT START RSS(chg) Internal soft-start pull-up resistance RSS(dchg) Internal soft-start pull-down resistance 190 305 485 VSSRST Soft-start reset threshold 100 150 200 0°C < TA < 125°C 65 100 140 –40°C < TA < 125°C 55 100 140 2 % 100 150 200 mV kΩ mV OVERCURRENT PROTECTION VILIM Overcurrent threshold OCDF Overcurrent duty cycle VILIM(rst) Overcurrent reset threshold 4.5 < VVDD < 52 (1) mV OSCILLATOR (1) 35 RRC = 200 kΩ, CRC = 470 pF 85 100 115 RRC = 68.1 kΩ, CRC = 470 pF 255 300 345 Oscillator frequency range fOSC Oscillator frequency Frequency line regulation VRMP Ramp amplitude 500 12 V < VVDD < 52 V -9 0 4.5 V < VVDD < 12 V –20 0 4.5 V < VVDD < 52 V VDD÷10 kHz % V PULSE WIDTH MODULATOR tMIN Minimum controllable pulse width. See Figure 24 for for tMIN vs fOSC at various input voltages. DMAX Maximum duty cycle KPWM Modulator and power stage dc gain VVDD = 12 V 200 400 VVDD = 30 V 100 200 fosc = 100 kHz, CL = 470 pF 93 95 fosc = 300 kHz, CL = 470 pF 90 93 8 10 12 100 250 ns % V/V ERROR AMPLIFIER IIB Input bias current nA AOL Open loop gain (1) GBWP Unity gain bandwidth (1) ICOMP(src) Output source current VFB = 0.6 V, COMP = 1 V 100 250 µA ICOMP(snk) Output sink current VFB = 1.2 V, COMP = 1 V 1.0 2.5 mA (1) 60 80 dB 1.5 3 MHz Ensured by design. Not production tested. THERMAL CHARACTERISTICS (1) over operating free-air temperature range (unless otherwise noted) PACKAGE SOIC (D) QFN (DRB) (1) PARAMETER MIN TYP θJC Thermal resistance, junction-to-case 49 θJC Thermal resistance, junction-to-case 85 θJB Thermal resistance, junction-to-board 21 θJP Thermal resistance, junction-to-pad θJA Thermal resistance, junction-to-ambient (natural convection) MAX UNIT °C/W 8 67 TI uses test boards designed to JESD 51-3 and JESD 51-7 for thermal-impedance measurements. The parameters outlined in these standards also are used to set up thermal models. TI uses the thermal-model program ThermCAL, a finite-difference thermal-modeling tool. Using this test procedure, the junction-to-case thermal resistance of this part is 49°C/W. For more information see TI Technical Brief SZZA017. Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 3 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com ORDERING INFORMATION (1) TA PACKAGE DESIGNATOR PACKAGE LEAD PACKAGE DESCRPTION D SOIC Plastic Small-Outline DRB QFN Plastic Small-Outline –40°C to 85°C (1) ORDERABLE PART NUMBER OUTPUT MEDIUM QUANTITY TPS40200D Tube 75 TPS40200DR Reel 2500 TPS40200DRBT Small reel 250 TPS40200DRBR Large reel 3000 For the most current packaging and ordering information see the Package Option Addendum at the end of this document or see the TI website at www.ti.com. DEVICE INFORMATION TPS40200 COMP 3 FB 4 E/A and SS Reference SS 2 + + 700 mV Soft-Start and Overcurrent PWM Logic Enable E/A ISNS 1 VDD 6 GDRV 5 GND GDRV voltage swing limited to (VIN–8V) 7 Driver RC 8 OSC UVLO UDG-05069 Figure 3. Functional Block Diagram 4 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Table 1. TERMINAL FUNCTIONS TERMINAL I/O DESCRIPTION 3 O Error amplifier output. Connect control loop compensation network from COMP to FB. 4 I Error amplifier inverting input. Connect feedback resistor network center tap to this pin. NAME NO. COMP FB GND 5 GDRV 6 O Driver output for external P-channel MOSFET ISNS 7 I Current-sense comparator input. Connect a current sense resistor between ISNS and VDD in order to set desired overcurrent threshold. RC 1 I Switching frequency setting RC network. Connect a capacitor from the RC pin to the GND pin and connect a resistor from the VDD pin to the RC pin. The device may be synchronized to an external clock by connecting an open drain output to this pin and pulling it to GND. For mor info on pulse width for synchronization, please refer to the Synchronizing the Oscillator section. SS 2 I Soft-start programming pin. Connect capacitor from SS to GND to program soft start time. Pulling this pin below 150 mV causes the output switching to stop, placing the device in a shutdown state. The pin also functions as a restart timer for overcurrent events. VDD 8 I System input voltage. Connect local bypass capacitor from VDD to GND. Device ground. QFN (DRB) PACKAGE (BOTTOM VIEW) RC 1 8 SOIC (D) PACKAGE (TOP VIEW) SS COMP FB 2 7 3 6 RC 1 8 VDD SS 2 7 ISNS COMP 3 6 GDRV FB 4 5 GND 4 5 VDD ISNS GDRV GND Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 5 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS QUIESCENT CURRENT vs TEMPERATURE QUIESCENT CURRENT vs INPUT VOLTAGE 3 1.66 1.65 2.5 1.64 2 1.62 IDD - mA IDD - mA 1.63 1.61 1.6 1.5 1 1.59 1.58 VDD = 12 V 0.5 1.57 0 1.56 -50 -25 0 25 50 75 100 5 125 10 15 20 Temp - °C Figure 4. 156 4.25 155.5 155 154.5 153.5 -50 -25 40 45 50 55 UVLO TURN ON AND TURN OFF vs TEMPERATURE 4.3 UVLO Turn On - V Reset Threshold - mV SOFT START THRESHOLD vs TEMPERATURE VDD = 12 V 30 35 VDD - V Figure 5. 156.5 154 25 Turn On 4.2 4.15 4.1 Turn Off 4.05 4 0 25 50 75 100 -50 125 -25 0 Temp - °C Figure 6. 25 50 Temp - °C 75 100 125 Figure 7. OSCILLATOR FREQUENCY vs TEMPERATURE CURRENT LIMIT THRESHOLD vs TEMPERATURE 103 98 96 102.5 VDD = 4.5 V 94 102 R = 202 kW C = 470 pF ILIM threshold - mV Frequency (kHz) 92 90 88 VDD = 12 V 86 84 80 -50 -25 0 25 50 75 100 101 100.5 125 99.5 -50 Temp (°C) -25 0 25 50 75 100 125 Temp - °C Figure 8. 6 VDD = 12 V 100 VDD = 52 V 82 101.5 Figure 9. Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 TYPICAL CHARACTERISTICS (continued) OSCILLATOR FREQUENCY vs VDD POWER STAGE GAIN vs VDD 275 21.00 R = 68.1 kW C = 470 pF TJ = 25°C 265 TJ = 25°C 20.50 260 255 Gain - dB Oscillator Frequency (kHz) 270 250 245 20.00 240 235 19.50 230 225 220 19.00 5 10 15 20 25 30 35 VDD (V) 40 45 50 55 5 10 15 20 Figure 10. 25 30 35 VDD - V 40 45 50 55 Figure 11. POWER STAGE GAIN vs TEMPERATURE POWER STAGE GAIN vs TEMPERATURE 20.50 20.50 20.30 20.45 VDD = 24 V VDD = 4.5 V 20.40 VDD = 12 V 19.90 Gain - dB Gain - dB 20.10 19.70 20.35 VDD = 52 V 20.30 19.50 20.25 -50 -25 0 25 50 75 100 125 -50 -25 0 Temp - °C 50 75 100 125 Temp °C Figure 12. Figure 13. MODULATOR RAMP AMPLITUDE vs TEMPERATURE MODULATOR RAMP AMPLITUDE vs TEMPERATURE 3 2.8 2.6 VDD = 24 V 2.4 Vramp - V 2.2 Vramp - V 25 2 1.8 1.6 1.4 VDD = 12 V 1.2 1 -50 -25 0 25 50 75 100 125 6 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 VDD = 52 V VDD = 36 V -50 -25 0 25 50 Temp - °C Temp - °C Figure 14. Figure 15. 75 100 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 125 7 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS (continued) FEEDBACK AMPLIFIER INPUT BIAS CURRENT vs TEMPERATURE MODULATOR RAMP AMPLITUDE vs VDD 160 6 TJ = 25°C 140 5 120 4 IIB - nA VRAMP - V 100 3 80 60 2 40 1 20 0 0 5 10 15 20 25 30 35 VDD - V 40 45 50 55 -50 -25 0 25 Figure 16. COMP SOURCE CURRENT vs TEMPERATURE 100 125 COMP SINK CURRENT vs TEMPERATURE 3.5 3 Output Current - mA 250 Output Current - mA 75 Figure 17. 300 200 150 100 50 2.5 2 1.5 1 0.5 0 0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 Temp - °C Temp - °C Figure 18. Figure 19. GATE DRIVE VOLTAGE vs TEMPERATURE 75 100 125 GATE DRIVE VOLTAGE vs VIN 8.4 8 VDD = 12 V 7.8 VJ = 25°C 8.2 7.6 VGATE - V 50 Temp - °C 8 7.4 7.8 7.2 7.6 7 7.4 6.8 7.2 6.6 7 6.4 -50 8 -25 0 Temp - °C 30 35 VDD - V Figure 20. Figure 21. 25 50 75 100 125 5 10 Submit Documentation Feedback 15 20 25 40 45 50 55 Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 TYPICAL CHARACTERISTICS (continued) REFERENCE VOLTAGE vs TEMPERATURE 720 718 718 716 716 714 714 712 VFB - mV VFB - mV REFERENCE VOLTAGE vs TEMPERATURE 720 VDD = 24 V 710 708 706 712 710 VDD = 4.5 V 708 706 VDD = 50 V 704 704 702 702 700 VDD = 12 V 700 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 Temp - °C Temp - °C Figure 22. Figure 23. MINIMUM CONTROLLABLE PULSE WIDTH vs FREQUENCY MAXIMUM DUTY CYCLE vs INPUT VOLTAGE 100 125 700 100 600 VDD = 4.5 V 95 400 300 VDD = 24 V VDD = 12 V 200 100 VDD = 36 V VDD = 52 V 0 0 100 200 300 Frequency - kHz 400 500 DMAX – Maximum Duty Cycle – % Pulse Width - ns 500 90 85 80 75 fOSC (kHz) 70 500 200 100 50 65 60 0 10 20 30 40 50 VVDD – Input Voltage – V Figure 24. Figure 25. Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 9 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com GENERAL INFORMATION Overview The TPS40200 is a non-synchronous controller with a built in 200-mA driver designed to drive high speed P-channel FETS up to 500 kHz. Small size combined with complete functionality makes the part both versatile and easy to use. The controller uses a low-value current-sensing resistor in series with the input voltage and the power FET’s source connection to detect switching current. When the voltage drop across this resistor exceeds 100 mV, the part enters a hiccup fault mode at about 2% of the operating frequency. The device uses voltage feedback to an error amplifier that is biased by a precision 700-mV reference. Feed-forward compensation from the input keeps the PWM gain constant over the full input voltage range, eliminating the need to change frequency compensation for different input voltages. The part also incorporates a soft-start feature where the output follows a slowly rising soft-start voltage, preventing output-voltage overshoot. Programming the Operating Frequency The operating frequency of the controller is determined by an external resistor RRC that is connected from the RC pin to VDD and a capacitor attached from the RC pin to ground. This connection and the two oscillator comparators inside the device, are shown in Figure 26. The oscillator frequency can be calculated from the following equation: f SW = 1 R RC ´ C RC ´ 0.105 Where : • fSW is the clock frequency • RRC is the timing resistor value in Ω • CRC is the timing capacitor value in F RRC must be kept large enough that the current through it does not exceed 750 µA when the internal switch (shown in Figure 26) is discharging the timing capacitor. This condition may be expressed by Equation 1. VIN £ 750 mA R RC (1) Synchronizing the Oscillator Figure 26 shows the functional diagram of the oscillator. When synchronizing the oscillator to an external clock, the RC pin must be pulled below 150 mV for 20 ns or more. The external clock frequency must be higher than the free running frequency of the converter as well. When synchronizing the controller, if the RC pin is held low for an excessive amount of time, erratic operation may occur. The maximum amount of time that the RC pin should be held low is 50% of a nominal output pulse, or 10% of the period of the synchronization frequency whichever is less. Under circumstances where the input voltage is high and the duty cycle is less than 50%, a Schottky diode connected from the RC pin to an external clock may be used to synchronize the oscillator. The cathode of the diode is connected to the RC pin. The trip point of the oscillator is set by an internal voltage divider to be 1/10 of the input voltage. The clock signal must have an amplitude higher than this trip point. When the clock goes low, it allows the reset current to restart the RC ramp, synchronizing the oscillator to the external clock. This provides a simple, single-component method for clock synchronization. 10 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 VDD VIN 8 TPS40200 + CLK RRC S Q RC RC R Q 1 Ext. Frequency Synchronization (optional) + CRC + 150mV GND 5 Figure 26. Oscillator Functional Diagram VDD VIN 8 TPS40200 Amplitde > VIN ¸ 10 Duty cycle < 50% + CLK RRC S Q RC RC R Q 1 + CRC Frequency > Controller Frequency + 150mV GND 5 Figure 27. Diode Connected Synchronization Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 11 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Current Limit Resistor Selection As shown in Figure 30, a resistor in series with the power MOSFET sets the overcurrent protection level. Use a low-inductance resistor to avoid ringing signals and nuisance tripping. When the FET is on and the controller senses 100mV or more drop from the VDD pin to the ISNS pin, an overcurrent condition is declared. When this happens, the FET is turned off, and as shown in Figure 29, the soft-start capacitor is discharged. When the soft-start capacitor reaches a level below 150 mV, the converter clears the overcurrent condition flag and attempts to restart. If the condition that caused the overcurrent event to occur is still present on the output of the converter (see Figure 28), another overcurrent condition is declared and the process repeats indefinitely. Figure 28 shows the soft start capacitor voltage during an extended output fault condition. The overall duty cycle of current conduction during a persistent fault is approximately 2%. Figure 28. Typical Soft-Start Capacitor and VOUT During Overcurrent VS-S TPS40200 VIN 8 + 100 mV 100 kW + ISNS Fault 7 S Q R Q SS 2 Reset Fault + Latched Fault 300 kW + 300 mV EAMP SS Ref Enable EAMP + 150 mV GND 5 Figure 29. Current Limit Reset 12 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 If necessary, a small R-C filter can be added to the current sensing network to reduce nuisance tripping due to noise pickup. This filter can also be used to trim the overcurrent trip point to a higher level with the addition of a single resistor. See Figure 30. The nominal overcurrent trip point using the circuit of Figure 30 is described as: IOC = VILIM R F1 + R F2 ´ R ILIM R F2 where • IOC is the overcurrent trip point, peak current in the inductor • VILIM is the overcurrent threshold voltage for the TPS40200, typically 100 mV • RILIM is the value of the current sense resistor in Ω • RF1 and RF2 are the values of the scaling resistors in Ω The value of the capacitor is determined by the nominal pulse width of the converter and the values of the scaling resistors RF1 and RF2. It is best not to have the time constant of the filter longer than the nominal pulse width of the converter, otherwise a substantial increase in the overcurrent trip point occurs. Using this constraint, the capacitor value may be bounded by the following: Cf £ VO R ´ R f2 ÷ f1 VIN ´ f SW R f1 + R f2 Where: • Cf is the value of the current limit filter capacitor in F • VO is the output voltage of the converter • VIN is the input voltage to the converter • fSW is the converter switching frequency • Rf1 and Rf2 are the values of the scaling resistors in Ω . VIN RILIM RF1 TPS40200 VDD 8 CF RF2 ISNS 7 GDRV 6 NOTE: The current limit resistor and its associated circuitry can be eliminated and pins 7 and 8 shorted. The result of this however, may result in damage to the part or PC board in the event of an overcurrent event. Figure 30. Current Limit Adjustment Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 13 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com MOSFET Gate Drive The output driver sinking current is approximately 200 mA. and is designed to drive P-channel power FETS. When the driver pulls the gate charge of the FET it is controlling to –8 V, the drive current folds back to a low level so that high-power dissipation only occurs during the turn-on period of the FET. This feature is particularly valuable when turning on a FET at high input voltages where leaving the gate drive current on would otherwise cause unacceptable power dissipation. Undervoltage Lockout Protection Undervoltage lockout (UVLO) protection ensures proper startup of the device only when the input voltage has exceeded minimum operating voltage. Undervoltage protection incorporates hysteresis which eliminates hiccup starting in cases where input supply impedance is high. VDD 8 TPS40200 545k + RUN 200K + 1.3V 36K GND 5 Figure 31. Undervoltage Lockout Undervoltage protection ensures proper startup of the device only when the input voltage has exceeded minimum operating voltage. The UVLO level is measured at the VDD pin with respect to GND. Startup voltage is typically 4.3 V with approximately 200 mV of hysteresis. The device shuts off at a nominal 4.1 V. As shown in Figure 31, when the input VDD voltage rises to 4.3 V , the 1.3 V comparator’s threshold voltage is exceeded and a RUN signal occurs. Feedback from the output closes the switch, and shunts the 200 kΩ resistor so that an approximately 200-mV lower voltage, or 4.1 V, is required before the part shuts down. 14 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Programming the Soft-Start Time An external capacitor CSS, connected from the SS pin to ground controls the soft-start interval. An internal charging resistor connected to VDD produces a rising reference voltage which is connected though a 700-mV offset to the reference input of the TPS40200 error amplifier. When the soft-start capacitor voltage (VCSS) is below 150 mV, there is no switching activity. When VCSS rises above the 700-mV offset, the error amplifier starts to follow VSST–700 mV, and uses this rising voltage as a reference. When VCSS reaches 1.4 V, the internal reference takes over, and further increases have no effect. An advantage of initiating a slow start in this fashion is that the controller cannot overshoot because its output follows a scaled version of the controller reference voltage. A conceptual drawing of the circuit that produces these results is shown in Figure 32. A consequence of the 700 mV offset is that the controller does not start switching until the VCSS has charged up to 700 mV. The output remains at 0 V during the resulting delay. When VCCS exceeds the 700-mV offset, the TPS40200 output follows the soft-start time constant. Once above 1.4 V, the 700-mV internal reference takes over, and normal operation begins. TPS40200 VSST 105 kW 700 mV VSST (offset) SS Ideal Diodes 2 + Error Amplifier + + Css FB 4 700 mV COMP 3 Figure 32. Soft-Start Circuit The slow-start time should be more (slower) than the time constant of the output LC filter. This time constraint may be expressed as: t S ³ 2p ´ L O ´ C O (2) The calculation of the soft start interval is simply the time it takes the RC network to exponentially charge from 0 V to 1.4 V. An Internal 105-kΩ charging resistor is connected from the SS pin to VSST. For applications where the voltage is above 8 V, an internal regulator clamps the maximum charging voltage to 8 V. The result of this is a formula for the start up time, as given by: æ VSST ö ÷ t SS = R c ´ CSS ´ ln çç ÷ è VSST - 1.4 ø where • tSS is the required soft-start time in seconds • CSS is the soft-start capacitor value in F • Rc is the internal soft-start charging resistor (105 kΩ nominal) • VSST is the input voltage up to a maximum of 8 V Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 15 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Voltage Setting and Modulator Gain Since the input current to the error amplifier is negligible, the feedback impedance can be selected over a wide range. Knowing that the reference voltage is 708 mV, pick a convenient value for R1 and then calculate the value of R2 from Equation 1. æ R ö VOUT = 0.708çç1 + 2 ÷÷ è R1 ø (3) Vg L KPWM VOUT d Cout Vc Rload R2 + Vref R1 Figure 33. System Gain Elements The error amplifier has a DC open loop gain of at least 60 dB with a minimum of a 1.5-MHz Gain Bandwidth Product which gives the user flexibility with respect to the type of feedback compensation he uses for his particular application. The gain selected by the user at the crossover frequency is set to provide an over all unity gain for the system. The crossover frequency should be selected so that the error amplifier open-loop gain is high with respect to the required closed-loop gain, ensuring that the amplifier response is determined by the passive feedback elements. 16 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 EXAMPLE APPLICATIONS Application 1: Buck Regulator, 8-to-12 V Input, 3.3 V or 5.0 V at 2.5 A Output Overview The buck regulator design shown in Figure 34 shows the use of the TPS40200. It delivers 2.5 A at either 3.3 or 5.0 V as selected by a single feedback resistor. It achieves approximately 90 % efficiency at 3.3 V and 94% at 5.0 V. A discussion of design tradeoffs and methodology is included to serve as a guide to the successful design of forward converters using the TPS40200. The List of Materials for this application is given in Table 3. The efficiency and load regulation from boards built from this design are shown in Figure 35 and Figure 36. Gerber files and additional application information are available from the factory. + + Notes D3 : Do not populate. SOT 23 Common Cathode Dual Schottky R6 =26.7k for 3.3 Vout, R6 = 16.2k for 5.0 Vout Figure 34. 8-to-16 VIN Step-Down Buck Converter 100 100 VIN = 8 V VIN = 12 V VIN = 16 V 90 80 Efficiency - % Efficiency - % 90 70 60 VIN = 8 V VIN = 12 V VIN = 16 V 80 70 60 VOUT = 5 V VOUT = 3.3 V 50 0 0.5 1 1.5 2 Load Current - A 2.5 Figure 35. Full-Load Efficiency at 5.0 VOUT 3 50 0 0.5 1 1.5 2 Load Current - A 2.5 3 Figure 36. Full-Load Efficiency at 3.3 VOUT Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 17 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Component Selection Table 2. Design Parameters Symbol Parameter VIN Input Voltage VOUT Output Voltage MIN NOM MAX UNIT 8.0 12 16.0 V IOUT at 2.5A 3.200 3.3 3.400 (1) V Line Regulation .2 % VOUT 3.293 3.3 3.307 V Load Regulation .2% VOUT 3.293 3.3 3.307 V Output Voltage IOUT at 2.5 A 4.85 5.0 5.150 (1) V Line Regulation .2% VOUT 4.990 5.0 5.010 V Load Regulation .2% VOUT 4.990 5.0 5.010 V VRIPPLE Output ripple voltage At maximum output current 60 mV VOVER Output overshoot For 2.5 A load transient from 2.5 A to 0.25 A 100 mV VUNDER Output undershoot For 2.5 A load transient from 0.25 A to 2.5 A IOUT Output Current 0.125 2.5 A ISCP Short circuit current trip point 3.75 5.00 A VOUT Test Condition Efficiency FS (1) At nominal input voltage and maximum output current Switching frequency 60 mV 90 % 300 kHz Set point accuracy is dependent on external resistor tolerance and the IC reference voltage. Line and Load regulation values are referenced to the nominal design output voltage. FET Selection Criteria 1. The maximum input voltage for this application is 16 V. Switching the inductor causes overshoot voltages that can equal the input voltage. Since the RDS(on) of the FET rises with breakdown voltage, select a FET with as low a breakdown voltage as possible. In this case, a 30-V FET was selected. 2. The selection of a power FET size requires knowing both the switching losses and dc losses in the application. ac losses are all frequency dependent and directly related to device capacitances and device size. On the other hand, dc losses are inversely related to device size. The result is an optimum where the two types of losses are equal. Since device size is proportional to RDS(on), begin by selecting a device with an RDS(on) that results in a small loss of power relative to package thermal capability and overall efficiency objectives. 3. In this application, the efficiency target is 90% and the output power 8.25 W. This gives a total power-loss budget of 0.916 W. Total FET losses must be small relative to this number. 2 The dc conduction loss in the FET is given by: PDC = Ir ms ´ R DSON The rms current is given by: 1 2 é æ DIpp ö÷ù 2 2 ú Irms = êD ´ ç IOUT + ê ç 12 ÷ú øû ë è where • • • • • • 18 DIpp = DV ´ D ´ tS Ll DV = VIN - VOUT - (DCR + R DSON )´ IOUT RDS(on) is the FET on-state resistance DCR is the the inductor dc resistance D is the duty cycle tS = the reciprocal of the switching frequency Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Using the values in this example, the dc power loss is 129 mW. The remaining FET losses are as follows: • PSW is the power dissipated while switching the FET on and off • Pgate is the power dissipated driving the FET gate capacitance • PCOSS is the power switching the FET output capacitance The total power dissipated by the FET is the sum of these contributions. PFET = PSW + Pgate + PCOSS + PRDSON The P-channel FET used in this application is a FDC654P with the following characteristics: trise = 13 × 10–9 COSS = 83 × 10–12 tfall = 6 × 10–9 Qg = 9 nC RDSON = 0.1 Ω Vgate = 1.9 V –9 Qgs = 1.0 × 10–9 Qgd = 1.2 × 10 Using these device characteristics and the following formulas we get: ö f æ f PSW = S ´ çç VIN ´ Ipk ´ t CHON ÷÷ + S VIN ´ Ipk ´ t CHOFF = 10 mW 2 è ø 2 ( t CHON = Where ) Q ´ RG Q GD ´ R G t CHOFF = GD VIN - VTH and VIN are the switching times for the power FET. PGATE = Q G ´ VGATE ´ f S = 22 mW (4) 2 PCOSS = C OSS ´ VIN _ MAX ´ f S 2 = 2 mW (5) IG = QG × fS =2.7 mA is the gate current. The sum of the switching losses is 34 mW, and is comparable to the 129 mW dc losses. At added expense, a slightly larger FET is better because the dc loss drops and the ac losses increase, with both moving toward the optimum point of equal losses. Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 19 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Rectifier Selection Criteria 1. Rectifier Breakdown Voltage The rectifier has to withstand the maximum input voltage which in this case is 16 V. To allow for switching transients which can approach the switching voltage a 30 V rectifier was selected. 2. Diode Size The importance of power losses from the Schottky rectifier D2 is determined by the duty cycle. For a low duty cycle application, the rectifier is conducting most of the time, and the current that flows through it times its forward drop can be the largest component of loss in the entire controller. In this application, the duty cycle ranges from 20% to 40%, which in the worst case means that the diode is conducting 80% of the time. Where efficiency is of paramount importance, choose a diode with a minimum of forward drop. In more cost sensitive applications, size may be reduced to the point of the thermal limitations of the diode package. The device in this application is large relative to the current required by the application. In a more cost sensitive application, a smaller diode in a less-expensive package will provide a less-efficient but appropriate solution The device used has the following characteristics: – Vf = 0.3 V at 3 A – Ct = 300 pF (Ct = the effective reverse voltage capacitance of the synchronous rectifier, D2.) The two components of the losses from the diode D2 are: I æ PCOND = Vf ´ çç IOUT + RIPPLE 4 è ö ÷÷ ´ (1 - D) ø = 653 mW Where: – D = the duty cycle – IRIPPLE is the ripple current – IOUT is the output current – VF is the forward voltage – PCOND is the conduction power loss The switching capacitance of this diode adds an ac loss, given by: 1 2 PSW = C ´ (VIN + Vf ) ´ f = 6.8 mW 2 [ ] This additional loss raises the total loss to: 660 mW (7) At an output voltage of 3.3 V, the application runs at a nominal duty cycle of 27%, and the diode is conducting 72.5% of the time. As the output voltage is moved up to 5 V, the on-time increases to 46% and the diode is conducting only 54% of the time during each clock cycle. This change in duty cycle proportionately reduces the conduction power losses in the diode. This reduction may be expressed as æ 0.54 ö 660 ç ÷ = 491 mW è0.725ø for a savings in power of 660 - 491 = 169 mW. To illustrate the relevance of this power savings we measured the full load module Efficiency for this application at 3.3 and 5 V. The 5 volt output efficiency is 92% vs. 89% for the 3.3-V design. This difference in efficiency represents a 456-mW reduction in losses between the two conditions. This 169-mW power-loss reduction in the rectifier represents 37% of the difference. 20 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Inductor Selection Criteria The P-channel FET driver facilitates switching the power FET at a high frequency. This, in turn, enables the use of smaller, less-expensive inductors as illustrated in this 300-kHz application. Ferrite, with its good high frequency properties, is the material of choice. Several manufacturers provide catalogs with inductor saturation currents, inductance values, and LSR’s (internal resistance) for their various-sized ferrites. In this application, the device must deliver a maximum current of 2.5 A. This requires that the output inductor’s saturation current be above 2.5 A plus the ripple current caused during inductor switching. The value of the inductor determines this ripple current. A low value of inductance has a higher ripple current that contributes to ripple voltage across the resistance of the output capacitors. The advantages of a low inductance are a higher transient response, lower DCR, a higher saturation current, and a smaller, less expensive part. Too low an inductor however, leads to higher peak currents which ultimately are bounded by the overcurrent limit set to protect the output FET or by output ripple voltage. Fortunately, with low ESR Ceramic capacitors on the output, the resulting ripple voltage for relatively high ripple currents can be small. For example, a single 1-µf, 1206 size, 6.3-V, ceramic capacitor has an internal resistance of 2 Ω at 1 MHz. For this 2.5 A application, a 10% ripple current of 0.25 A produces a 50-mV ripple voltage. This ripple voltage may be further reduced by additional parallel capacitors. The other bound on inductance is the minimum current at which the controller enters discontinuous conduction. At this point, Inductor current is zero. The minimum output current for this application is specified at 0.125 A. This average current is the peak current that must develop during a minimum on time. The conditions for minimum on time are high line and low load. Using: LMIN = VIN - VOUT ´ t ON IPEAK = 32 mH where • VIN = 16 V • VOUT = 3.3 V • IPEAK = 0.25 A • tON = 0.686 µS • tON 3. 3 V 1 ´ is given by 300 kHz 16 V Where: The inductor used in the circuit is the closest standard value of 33 µH. This is the minimum inductance that can be used in the converter to deliver the minimum current while maintaining continuous conduction. Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 21 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Output Capacitance In order to satisfy the output voltage over and under shoot specifications there must be enough output capacitance to keep the output voltage within the specified voltage limits during load current steps. In a situation where a full load of 2.5 A within the specified voltage limits is suddenly removed, the output capacitor must absorb energy stored in the output inductor. This condition may be described by realizing that the energy in the stored in the inductor must be suddenly absorbed by the output capacitance. This energy relationship is written as: 1 1 2 2 2 ´ L OIO £ ´ C O VOS - VO 2 2 [ ( )] where • VOS is the allowed over-shoot voltage above the output voltage • LO is the inductance • IO is the output current • CO is the output capacitance • VO is the output voltage In this application, the worst case load step is 2.25 A and the allowed overshoot is 100 mV. With a 33-µH output inductor, this implies an output capacitance of 249 µF for a 3.3-V output and 165 µF for a 5-V output.. When the load increases from minimum to full load the output capacitor must deliver current to the load. The worst case is for a minimum on time that occurs at 16 V in and 3.3 VOUT and minimum load. This corresponds to an off time of (1 – 0.2 ) times the period 3.3-µs and is the worst case time before the inductor can start supplying current. This situation may be represented by DVO < DIO ´ t OFFMAX CO where • ΔVO is the undershoot specification of 60 mV • ΔIO is the load current step • tOFF(max) is the maximum off time This condition produces a requirement of 100 µF for the output capacitance. The larger of these two requirements becomes the minimum value of output capacitance. The ripple current develops a voltage across the ESR of the output capacitance, so another requirement on this component is it ESR be small relative to the ripple voltage specification. Switching Frequency The TPS40200 has a built in, 8-V, 200 mA, P-channel FET driver output that facilitates using P-channel switching FETs A clock frequency of 300 kHz is chosen as a switching frequency that represents a compromise between a high-frequency that allows the use of smaller capacitors and inductors but one that is not so high as to cause excessive transistor switching losses. As previously discussed, an optimum frequency can be selected by picking a value where the dc and switching losses are equal. The frequency is set by using the design formula given in the FET Selection Criteria section. RRC ´ CRC = 1 0.105 ´ fSW Where: • RRC is the timing resistor value in Ω • RRC = 68.1 Ω • CRC is the timing capacitor value in F • C5 = 470 pF • fSW is the desired switching frequency in Hz • fSW= 297 kHz. At a worst case of 16 V, the timing resistor draws about 250 µA which is well below the 750 µA maximum which the circuit can pull down. 22 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Programming the Overcurrent Threshold Level The current limit in the TSP40200 is triggered by a comparator with a 100-mV offset whose inputs are connected across a current-sense resistor between VCC and the source of the high-side switching FET. When current in this resistor develops more than 100 mV, the comparator trips and terminates the output gate drive. In this application, the current-limit resistor is set by the peak output stage current which consists of the maximum load current plus the ripple current. In this case, we have 2.5 +0.125 = 2.625 A. To accommodate tolerances a 25% margin is added giving a 3.25 A peak current. Using the equation below then yields a value for RILIM of 0.30 Ω. Current sensing in a switching environment requires attention to both circuit board traces and noise pick up. In the design shown a small RC filter has been added to the circuit to prevent switching noise from tripping the current sense comparator. The requirements of this filter are board-dependent, but with the layout used in this application, no unreasonable overcurrent is observed. VIN RILIM RF1 TPS40200 VDD 8 CF RF2 ISNS 7 GDRV 6 ILIM = 0. 1 R ILIM Figure 37. Overcurrent Trip Circuit for RF2 Open Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 23 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Soft Start Capacitor The soft start interval is given (in pF) by the following equation: C SS = t SS æ VSST ö ÷ R ´ ln çç ÷ è VSST - 1.4 ø ´ 10 3 where • R is an internal 105-kΩ charging resistor • VCC is the input voltage up to 8 V where the charging voltage is internally clamped. to 8 V maximum • VOS = 700 mV, and because the input voltage is 12 V, VSST = 8 V. The oscilloscope picture below shows the expected delay at the output (middle trace) until the soft-start node (bottom trace) reaches 700 mV. At this point, the output rises following the exponential rise of the soft-start capacitor voltage until the soft-start capacitor reaches 1.4 V and the internal 700-mV reference takes over. This total time is approximately 1 ms, which agrees with the calculated value of 0.95 ms where the soft start capacitance is 0.047 µF. A. Channel 1 is the output voltage (VOUT) rising to 3.3 V B. Channel 2 is the soft start pin (SS) Figure 38. Soft Start Showing Output Delay and Controlled Rise To Programmed Output Voltage 24 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Frequency Compensation The four elements that determine the system overall response are discussed below The gain of the error amplifier (KEA) is the first of there elements. Its output develops a control voltage which is the input to the PWM. The TPS40200 has a unique modulator that scales the peak to peak amplitude of the PWM ramp to be 0.1 times the value of the input voltage. Since modulator gain is given by VIN divided by VRAMP, the modulator gain is 10 and is constant at 10 (20 dB) over the entire specified input voltage range. The last two elements that affect system gain are the transfer characteristic of the output LC filter and the feedback network from the output to the input to the error amplifier. These four elements maybe expressed by the following expression that represents the system transfer function as shown in Figure 39. TV (S ) = K FB ´ K EA (S)´ K PWM ´ X LC (S) Where: • KFB is the output voltage setting divider • KEA is the error amplifier feedback • KPWM is the modulator gain • XLC is the filter transfer function vg Vref + KEA vc KPWM d XLC vo Tv(s) KFB Figure 39. Control Loop Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 25 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Figure 40 shows the feedback network used in this application. This is a Type II compensation network which gives a combination of good transient response and phase boost for good stability. This type of compensation has a pole at the origin causing a -20dB/decade (-1) slope followed by a zero that causes a region of flat gain followed by a final pole that returns the gain slope to -1 . The bode plot in Figure 41 shows the effect of these poles and zeros. The procedure for setting up the compensation network is as follows: 1. Determine the break frequency of the output capacitor. 2. Select a zero frequency well below this break frequency. 3. From the gain bandwidth of the error amplifier select a cross over frequency where the amplifier gain is large relative to expected closed loop gain 4. Select a second zero well above the crossover frequency, that returns the gain slope to a -1 slope. 5. Calculate the required gain for the amplifier at crossover. Be prepared to iterate this procedure to optimize the pole and zero locations as needed. C7 C8 R8 R10 + R6 VREF Figure 40. Error Amplifier feedback Elements The frequency response of this converter is largely determined by two poles that arise from the LC output filter and a higher frequency zero caused by the ESR of the output capacitance. The poles from the output filter cause a 40 dB/decade roll off with a phase shift approaching 180 degrees followed by the output capacitor zero that reduced the roll off to -20 dB and gives a phase boost back toward 90 degrees. In other nomenclature, this is a -2 slope followed by a -1 slope. The two zeros in the compensation network act to cancel the double pole from the output filter The compensation network’s two poles produce a region where the error amplifier is flat and can be set to a gain such that the overall gain of the system is zero dB. This region is set so that it brackets the system crossover frequency. Gain - dB Error Amplifier Type 2 Compensation P1 Slope = -1 z1 p2 A V2 A V1 f1 Freq. f2 Figure 41. Error Amplifier Bode Plot 26 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 In order to properly compensate this system, it is necessary to know the frequencies of its poles and zeros. Step 1 The break frequency of the output capacitor is given by: Fesr = 1 2pR esr C where • C = the output capacitor, 221 µF • RESR = the ESR of the capacitors Because of the ESR of the output capacitor, the output LC filter has a single-pole response above the 1.8-kHz break frequency of the output capacitor and its ESR. This simplifies compensation since the system becomes essentially a single pole system. Step 2 The first zero is place well below the 1.8-kHz break frequency of the output capacitor and its ESR. The phase boost from this zero is shown in Figure 43. fZ1 = 1 2pR 8C8 where: • R8 = 300 kΩ • C8 = 1500 pF • FZ1 = 354 Hz Step 3 From its minimum gain bandwidth product of 1.5 MHz, and knowing it has a 20 dB/decade roll off, the open-loop gain of the error amplifier is 33 dB at 35 kHz. This approximate frequency is chosen for a crossover frequency to keep the amplifier gain contribution to the overall system gain small, as well as following the convention of placing the crossover frequency between 1/6 to 1/10 the 300 kHz switching frequency. Step 4 The second pole is placed well above the 35 kHz crossover frequency. fP2 = 1 ´ (C7 + C8 ) 2p ´ C 7 ´ C 8 ´ R 8 where • R8 = 300 kΩ • C7 = 10 pF • C8 1500 pF • fP2 = 53 kHz Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 27 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Step 5 Calculate the gain elements in the system to determine the gain required by the error amplifier to make the over all gain 0 dB at 35 kHz. The total gain around the voltage feedback loop is: TV (S ) = K FB ´ K EA (S)´ K PWM ´ X LC (S) where • KFB is the output voltage setting divider • KEA is the error amplifier feedback • KPWM is the modulator gain • XLC is the filter transfer function With reference to the graphic below, the output filter's transfer characteristic XLC (S) can be estimated by the following: RSW VIN L D Vsw VOUT 1-D RSR COUT RLOAD Figure 42. Output Filter Analysis X LC (S) = Z OUT (S) Z OUT (S) + Z L (S) + R SW ´ D + R SR ´ (1 - D) where • ZOUT is the parallel combination of output capacitor(s) and the load • RSW is the RDS(on) of the switching FET plus the current-sense resistor • RSR is the resistance of the synchronous rectifier • D is the duty cycle estimated as 3.3 / 12 = 0.27 To evaluate XLC(S) at 35 kHz use the following: • ZOUT(s) at 35 kHz, which is dominated by the output capacitor's ESR; estimated to be 400 mΩ • ZL(s) at 35 kHz is 7.25 Ω • RSW = 0.95 mΩ, including the RLIM resistance • RSR = 100 mΩ Using these numbers, XLC(S) = 0.04 or –27.9 db. The feedback network has a gain to the error amplifier given by: K fb = R 10 R6 where for 3.3 VOUT, R6 = 26.7 kΩ Using the values in this application, Kfb = 11.4 dB. The modulator has a gain of 10 that is flat to well beyond 35 kHz, so KPWM = 20 dB. To achieve 0 db overall gain, the amplifier and feedback gain must be set to 7.9 db (20 db – 27.9db) The amplifier gain, including the feedback gain, Kfb, can be approximated by this expression: 28 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 VOUT (S ) = VIN 1+ R10 R8 A VOL R + 10 ´ (1 + A VOL ) ZFS Where • Zfs is the parallel combination of C7 in parallel with the sum of R8 and the impedance of C8. • AVOLis the open-loop gain of the error amplifier at 35 kHz, which is 44.6, or 33 db. Figure 43 shows the result of the compensation. The crossover frequency is 35 kHz and the phase margin is 45 degrees. The response of the system is dominated by the ESR of the output capacitor and is exploited to produce an essentially single-pole system with simple compensation. 50 180 40 160 30 140 120 Gain GAIN 10 100 0 80 Phase -10 60 -20 40 -30 PHASE - DEGREES 20 20 -40 -50 0.1 1 10 100 0 1000 CROSSOVER FREQUENCY - kHz Figure 43. Overall System Gain and Phase Response Figure 43 also shows the phase boost that gives the system a crossover phase margin of 47°. The bill of materials for this application is shown below. The efficiency and load regulation from boards built from this design are shown in the following two figures. Gerber PC layout files and additional application information are available from the factory. Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 29 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Table 3. List of Materials, Buck Regulator, 12 V to 3.3 V and 5.0 V Ref. Des. Value Description Size Mfr. Part Number C1 100 µF Capacitor, Aluminum, SM, 25-V, 0.3 Ω 8 x 10 mm Sanyo 20SVP100M C12 220 µF Capacitor, Aluminum, SM, 6.3-V, 0.4 Ω 8 x 6.2 mm Panasonic EEVFC0J221P C13 100 pF Capacitor, Ceramic, 50V, [COG], [20%] 603 muRata Std. C3 0.1 pF Capacitor, Ceramic, 50V, [X7R], [20%] 603 muRata Std. C2, C11 1 µF Capacitor, Ceramic, 50V, [X7R], [20%] 603 muRata Std. C4, C5 470 pF Capacitor, Ceramic, 50V, [X7R], [20%] 603 muRata Std. 0.047 µF Capacitor, Ceramic, 50V, [X7R], [20%] 603 muRata Std. C7 10 pF Capacitor, Ceramic, 50V, [COG], [20%] 603 muRata Std. C8 1500 pF Capacitor, Ceramic, 50V, [X7R], [20%] 603 muRata Std. D1 12 V Diode, Zener, 12-V, 350-mW SOT23 Diodes, Inc. BZX84C12T Diode, Schottky, 30-A, 30-V SMC On Semi MBRS330T3 Diode Zener 12-V 5 mA VMD2 Rohm VDZT2R12B J1,J3 Terminal Block 4-Pin 15-A 5.1-mm 0.8 x 0.35 OST ED2227 J2 Header, 2-pin, 100-mil spacing, (36-pin strip) 0.100 x 2 Sullins PTC36SAAN TDK SLF12575T330M3R2PF C6 D2 D3 12 V 33 µH Inductor, SMT, 3.2 A, .039 Ω 12.5 x 12.5 mm PCB 2 Layer PCB 2 Ounce Cu 1.4 x 2.12 x 0.062 Q1 Trans, N-Chan Enhancement Switching, 50 mA SOT-143B Phillips BSS83 Q2 MOSFET, P-ch, 30-V, 3.6-A, 75-mΩ SuperSOT-6 Fairchild FDC654P U1 IC, Low Cost Non-Sync Buck Controller SO-8 TI TPS40200D L1 HPA164 R1 10 Ω Resistor, Chip, 1/16 W, 1% 603 Std. Std. R10 100 kΩ Resistor, Chip, , 1/16W, 1% 603 Std. Std. R11 10 kΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. R12 1 MΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. R13 49.9 Ω Resistor, Chip, 1/16 W, 1% 603 Std. Std. R2 0.02 Ω Resistor, Chip, W, 5% 2010 Std. Std. R3 68.1 kΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. R4 2.0 kΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. R5 0Ω Resistor, Chip, 1/16 W, 1% 603 Std. Std. R6 26.7 kΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. R7 1.0 kΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. R8 300 kΩ Resistor, Chip, 1/16 W, 1% 603 Std. Std. PC Board Plots The following figures Figure 44 through Figure 46 show the design of the TPS40200EVM-001 printed circuit board The design uses 2-layer, 2oz copper and is 1.4” x 2.3” in size All components are mounted on the top side to allow the user to easily view, probe, and evaluate the TPS40200 control IC in a practical application. Moving components to both sides of the printed circuit board (PCB) or using additional internal layers can offer additional size reduction for space constrained applications 30 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Figure 44. TPS40200EVM-001 Component Placement (Viewed from Top) Figure 45. TPS40200EVM001 Top Copper (Viewed from Top) Figure 46. TPS40200EVM-001 Bottom Copper (X-Ray View from Top) Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 31 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com Application 2: 18 - 50 V Input, 16 V at 1 A Output This is an example of using the TPS40200 in a higher voltage application. The output voltage is 16 V at 1 A with an 18 to 50 V input. Module boards built to this schematic and a test report are available from the factory. Some of the test results are shown below. Test Results The following two curves demonstrate some of the performance obtained from this application. Further information and support material is available from the factory. + + Figure 47. Buck Converter. VIN = 18 - 50; VOUT = 16 V @ 1 A 100 16.500 VIN = 24 V 16.450 95 Output Voltage - V Efficiency - % 16.400 VIN = 48 V 90 85 80 16.350 VIN = 48 V 16.300 16.250 VIN = 24 V 16.200 75 16.150 70 16.100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Load Current - A 0.8 Figure 48. Efficiency vs. Load 32 0.9 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Load Current - A 0.8 0.9 1.0 Figure 49. Load Regulation, Two Input Voltage Extremes Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Application 3: Wide Input Voltage LED Constant Current Driver This application uses the TPS40200 as a buck controller that drives a string of LED diodes. The feedback point for this circuit is a sense resistor in series with this string. The low 0.7-V reference minimizes power wasted in this resistor, and maintains the LED current at a value given by 0.7/RSENSE. As the input voltage is varied, the duty cycle changes to maintain the LED current at a constant value so that the light intensity does not change with large input voltage variations. + + Figure 50. Wide Input Voltage Range LED Driver 100 Efficiency - % 90 80 70 60 50 10.0 15.0 20.0 Input Voltage - V 25.0 30.0 Figure 51. Efficiency vs Input Voltage Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 33 TPS40200 SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com DESIGN REFERENCES PC BOARD LAYOUT RECOMMENDATIONS R3 R1 Input C5 C3 TPS40200 C6 1 RC RSENSE VDD C1 8 C4 Q1 R5 2 SS ISEN L1 Output 7 R4 C2 GDRV 6 3 COMP D1 C7 Ground C8 4 FB GND 5 R8 R9 C9 R6 R10 U D G-07045 Input R3 C5 TPS40200 C3 R1 VDD C4 R5 SS ISEN COMP GDRV FB GND C7 RC C8 C6 R4 RSENSE Switch node C1 High current Power stage components Q1 L1 Output Low current Control Components R9 R10 D1 C9 R8 R6 C2 Ground Kelvin Ground Kelvin Voltage Sense Figure 52. PC Board Layout Recommendations 34 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 TPS40200 www.ti.com ........................................................................................................................................ SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 Layout Hints • Keep the ac current loops as short as possible. For the maximum effectiveness from C3, place it near the VDD pin of the controller and design the input ac loop consisting of C1-RSENSE-Q1-D1 to be as short as possible. Excessive high frequency noise on VDD during switching degrades overall regulation as the load increases. • Keep the output loop A (D1-L1-C2) as small as possible. A larger loop can degrade the application output noise performance. • Traces carrying large ac currents should NOT be connected through a ground plane. Instead, use PCB traces on the top layer to conduct the ac current and use the ground plane as a noise shield. Split the ground plane as necessary to keep noise away from the TPS40200 and noise sensitive areas such as feedback resistors R6, and R10. • Keep the SW node as physically small as possible to minimize parasitic capacitance and to minimize radiated emissions • For good output voltage regulation, Kelvin connections should be brought from the load to R6 and R10. • The trace from the R6-R10 junction to the TPS40200 should be short and kept away from any noise source (such as the SW node). • The gate drive trace should be as close as possible. to the power FET gate Related Devices DEVICE NUMBER TPS4007 TPS4009 TL5001 DESCRIPTION Low Input Synchronous Buck Controller Wide Input Range Controller TPS40057 Wide input (8V to 40V) Synchronous Buck Controller TPS40190 Low Pin Count Synchronous Buck Controller TPS40192 TPS40193 – 4.5 V to 18 V Low Pin Count Synchronous Buck Controller Reference Documents • • • • • Under the Hood of Low Voltage DC/DC Converters – SEM1500 Topic 5 – 2002 Seminar Series Understanding Buck Power Stages in Switchmode Power Supplies – SLVA057 - March 1999 Design and Application Guide for High Speed MOSFET Gate Drive Circuits- SEM 1400 – 2001 Seminar Series Designing Stable Control Loops - SEM 1400 – 2001 Seminar Series http://power.ti.com Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): TPS40200 35 PACKAGE OPTION ADDENDUM www.ti.com 15-Mar-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS40200D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS40200DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS40200DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPS40200DRBR ACTIVE SON DRB 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS40200DRBT ACTIVE SON DRB 8 250 Call TI Level-2-260C-1 YEAR TPS40200DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF TPS40200 : TPS40200-Q1 • Automotive: • Enhanced Product: TPS40200-EP NOTE: Qualified Version Definitions: - Q100 devices qualified for high-reliability automotive applications targeting zero defects • Automotive • Enhanced Product - Supports Defense, Aerospace and Medical Applications Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 29-Nov-2008 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel Diameter Width (mm) W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS40200DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TPS40200DRBR SON DRB 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 TPS40200DRBT SON DRB 8 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 29-Nov-2008 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS40200DR SOIC D 8 2500 340.5 338.1 20.6 TPS40200DRBR SON DRB 8 3000 346.0 346.0 29.0 TPS40200DRBT SON DRB 8 250 190.5 212.7 31.8 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Amplifiers amplifier.ti.com Audio www.ti.com/audio Data Converters dataconverter.ti.com Automotive www.ti.com/automotive DLP® Products www.dlp.com Communications and Telecom www.ti.com/communications DSP dsp.ti.com Computers and Peripherals www.ti.com/computers Clocks and Timers www.ti.com/clocks Consumer Electronics www.ti.com/consumer-apps Interface interface.ti.com Energy www.ti.com/energy Logic logic.ti.com Industrial www.ti.com/industrial Power Mgmt power.ti.com Medical www.ti.com/medical Microcontrollers microcontroller.ti.com Security www.ti.com/security RFID www.ti-rfid.com Space, Avionics & Defense www.ti.com/space-avionics-defense RF/IF and ZigBee® Solutions www.ti.com/lprf Video and Imaging www.ti.com/video Wireless www.ti.com/wireless-apps Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2010, Texas Instruments Incorporated