SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMT5550 FMMT5551 ISSUE 4 - NOVEMBER 1996 ✪ PARTMARKING DETAILS - COMPLEMENTARY TYPES - FMMT5550 1FZ FMMT5551 ZG1 E C FMMT5550 FMMT5400 FMMT5551 FMMT5401 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO FMMT5550 FMMT5551 160 180 UNIT Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 6 6 V V Continuous Collector Current IC 600 600 mA Power Dissipation at Tamb=25°C Ptot 330 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMT5550 PAGE NUMBER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 160 180 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 140 160 V IC=1mA Emitter-Base Breakdown Voltage V(BR)EBO 6 6 V IE=10µ A* Collector Cut-Off Current ICBO nA VCB=100V VCB=100V, TA=100°C VCB=120V VCB=120V, TA=100°C Static Forward Current Transfer Ratio hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Transition Frequency fT Output Capacitance Cobo Small Signal hfe Noise Figure NF Periodic Sample Test Only MAX. FMMT5551 PARAMETER MIN. 100 100 60 60 20 MAX. UNIT 50 50 nA µA 250 IC=1mA, VCE=5V IC=10mA, VCE=5V IC=50mA, VCE=5V 0.15 0.25 0.15 V 0.20 V IC=10mA, IB=1mA IC=50mA, IB=5mA 1.0 1.2 1.0 V 1.2 V IC=10mA, IB=1mA IC=50mA, IB=5mA 100 300 MHz IC=10mA, VCE=10V f=100MHz 6.0 pF VCB=10V, f=1MHz 50 260 IC=1mA, VCE=10V f=1KHz 250 100 300 50 200 80 80 30 µA CONDITIONS. 6.0 10 PAGE NUMBER 8 dB IC=250µ A, VCE=5V, RS=1KΩ f=10Hz to 15.7KHz .