WS512K8-XCX HI-RELIABILITY PRODUCT 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 ■ Access Times 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 ■ Standard Microcircuit Drawing, 5962-92078 ■ MIL-STD-883 Compliant Devices Available ■ Rad Tolerant Devices Available VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 ■ JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300) ■ Commercial, Industrial andMilitary Temperature Range (-55°C to +125°C) ■ Organized as 512K x 8 ■ 5 Volt Power Supply ■ Low Power CMOS ■ TTL Compatible Inputs and Outputs ■ Battery Back-Up Operation PIN DESCRIPTION A0-18 Address Inputs I/O0-7 Data Input/Output CS Chip Select OE Output Enable WE Write Enable VCC +5.0V Power GND Ground BLOCK DIAGRAM A0-16 I/O0-7 WE OE 128K x 8 128K x 8 128K x 8 128K x 8 A17 A18 Decoder CS May 1999 Rev. 2 1 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WS512K8-XCX ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 °C °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature Storage Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 7.0 V Supply Voltage -0.5 VCC CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Symbol Condition Max Unit Supply Voltage VCC 4.5 5.5 V Input capacitance CIN VIN = 0V, f = 1.0MHz 45 pF Input High Voltage VIH 2.2 V CC + 0.3 V Output capicitance COUT VOUT = 0V, f = 1.0MHz 45 pF Input Low Voltage VIL -0.5 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C Parameter This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol Conditions Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 Standby Current ISB CS = VIH, OE = VIH, f = 5MHz Output Low Voltage VOL IOL = 8mA, Vcc = 4.5 Output High Voltage VOH IOH = -4.0mA, Vcc = 4.5 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V -20 Min Max 10 10 210 80 0.4 2.4 -25 Min Max 10 10 210 60 0.4 2.4 -35 -45 Min Max Min Max 10 10 10 10 210 210 60 55 0.4 0.4 2.4 2.4 Units µA µA mA mA V V DATA RETENTION CHARACTERISTICS (TA = -55°C to +125°C) Parameter Symbol Conditions -20 Min Data Retention Supply Voltage Data Retention Current V DR CS ≥ V CC -0.2V I CCDR1 V CC = 3V -25 Typ Max Min 5.5 2.0 8.0 12.8 2.0 FIG. 2 Typ Max Min 5.5 2.0 8.0 12.8 -35 -45 Typ Max Min Typ Max 5.5 2.0 8.0 12.8 Units 5.5 8.0 12.8 AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 2 Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. V Z is typically the midpoint of VOH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. V mA WS512K8-XCX AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol Read Cycle -20 Min Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time t ACS -25 Max Min 20 -35 Max Min 25 35 20 3 ns 45 ns 45 ns 35 ns 3 25 10 Units Max 35 3 20 Min 45 25 3 -45 Max ns 35 Output Enable to Output Valid t OE Chip Select to Output in Low Z t CLZ 1 3 3 10 3 25 3 Output Enable to Output in Low Z t OLZ 1 0 0 0 0 Chip Disable to Output in High Z t CHZ 1 15 17 20 30 ns Output Disable to Output in High Z t OHZ 1 12 15 20 25 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND =0V, TA = -55°C to +125°C) Parameter Symbol Write Cycle -20 Min -25 Max Min -35 Max Min -45 Max Min Units Max Write Cycle Time t WC 20 25 35 45 ns Chip Select to End of Write t CW 16 20 25 30 ns Address Valid to End of Write t AW 16 20 25 30 ns Data Valid to End of Write t DW 15 15 20 25 ns Write Pulse Width t WP 16 20 25 30 ns Address Setup Time t AS 2 2 2 2 ns Address Hold Time t AH 2 2 2 2 ns Output Active from End of Write t OW 1 4 5 5 5 Write Enable to Output in High Z t WHZ 1 Data Hold Time t DH 10 0 1 1 15 0 1 20 0 1 ns 25 ns ns 1. This parameter is guaranteed by design but not tested. 3 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WS512K8-XCX FIG. 3 TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) FIG. 4 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 5 WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 4 tDH WS512K8-XCX PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.4 (1.670) ± 0.4 (0.016) 15.04 (0.592) ± 0.3 (0.012) 4.34 (0.171) ± 0.79 (0.031) PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.84 (0.033) ± 0.4 (0.014) 2.5 (0.100) TYP 1.27 (0.050) ± 0.1 (0.005) 0.46 (0.018) ± 0.05 (0.002) 0.25 (0.010) ± 0.05 (0.002) 15.25 (0.600) ± 0.25 (0.010) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WS512K8-XCX ORDERING INFORMATION W S 512K 8 - XXX C X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE: C = Ceramic 0.600" DIP (Package 300) ACCESS TIME (ns) ORGANIZATION, 512K x 8 SRAM WHITE MICROELECTRONICS DEVICE TYPE SPEED PACKAGE SMD NO. 512K x 8 SRAM 45ns 32 pin DIP 5962-92078 06HTX 512K x 8 SRAM 35ns 32 pin DIP 5962-92078 07HTX 512K x 8 SRAM 25ns 32 pin DIP 5962-92078 08HTX 512K x 8 SRAM 20ns 32 pin DIP 5962-92078 09HTX White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 6