WEDPS512K32-XBX White Electronic Designs 512Kx32 SRAM MULTI-CHIP PACKAGE FEATURES n Commercial, Industrial and Military Temperature Ranges n Access Times of 12, 15, 17, 20, ns n TTL Compatible Inputs and Outputs n Packaging n 5 Volt Power Supply n Low Power CMOS • 16mm x 18mm, 143 PBGA n Organized as 512Kx32, User Configurable as 1Mx16 or 2Mx8 FIG. 1 Note: This data sheet describes a product that is subject to change without notice. PIN CONFIGURATION F OR WEDPS512K32-XBX TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 A - A2 A1 A0 GND GND V CC V CC A18 A17 A16 GND B CS2 A3 A4 D14 D15 NC CS4 D24 D25 OE A15 NC C D9 D8 NC D12 D13 GND V CC D26 D27 WE4 D31 D30 D D10 D11 GND GND GND GND V CC V CC V CC V CC D28 D29 E WE2 GND GND GND GND GND V CC V CC V CC V CC V CC NC F GND GND GND GND GND GND V CC V CC V CC V CC V CC V CC G V CC V CC V CC V CC V CC V CC GND GND GND GND GND GND H CS1 V CC V CC V CC V CC V CC GND GND GND GND GND NC J D1 D0 V CC V CC V CC V CC GND GND GND GND D23 D22 K D2 D3 NC D7 D5 V CC GND D17 D16 CS3 D20 D21 L WE1 A6 A5 D6 D4 NC WE3 D19 D18 A14 A13 NC M GND A7 A8 A9 V CC V CC GND GND A10 A11 A12 V CC BLOCK DIAGRAM W E1 CS1 W E2 CS2 W E3 CS3 P IN D ESCRIPTION W E4 CS4 OE A0-18 512K x 8 8 I/O0-7 February 2003 Rev.5 512K x 8 8 I/O8-15 512K x 8 8 I/O16-23 512K x 8 8 I/O24-31 1 I/O0-31 Data Inputs/Outputs A0-18 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPS512K32-XBX White Electronic Designs TRUTH TABLE A BSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit CS OE WE Mode Data I/O Power H L L L X L H X X H H L Standby Read Out Disable Write High Z Data Out High Z Data In Standby Active Active Active TA -55 +125 °C Storage Temperature TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 7.0 V Operating Temperature Supply Voltage -0.5 VCC BGA THERMAL RESISTANCE RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Symbol Min Max Unit VCC 4.5 5.5 V VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.5 +0.8 V Operating Temp (Mil) TA -55 +125 °C Description Symbol Max Unit Notes Junction to Ambient (No Airflow) Theta JA 16.5 °C/W 1 Junction to Ball Theta JB 11.3 °C/W 1 Junction to Case (Top) Theta JC 9.8 °C/W 1 NOTE: Refer to Application Note "PBGA Thermal Resistance Correlation" at www.whiteedc.com in the application notes section for modeling conditions. CAPACITANCE (TA = +25°C) Parameter Symbol Conditions OE capacitance COE VIN = 0 V, f = 1.0 MHz Max Unit 30 pF WE1-4 capacitance CWE VIN = 0 V, f = 1.0 MHz 10 pF CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 10 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 10 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 30 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C) Parameter Symbol Conditions Min Max 10 Units Input Leakage Current I LI VCC = 5.5, VIN = GND to VCC Output Leakage Current I LO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 660 mA Operating Supply Current x 32 Mode ICC x 32 µA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 mA Output Low Voltage VOL IOL = 8mA 0.4 V Output High Voltage VOH IOH = -4.0mA 2.4 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 V WEDPS512K32-XBX White Electronic Designs AC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C) Parameter Symbol Read Cycle -12 Min -15 Max 12 Min -17 Max 15 Min -20 Max 17 Min Units Max Read Cycle Time t RC Address Access Time tAA Output Hold from Address Change tOH Chip Select Access Time tACS 12 15 17 20 Output Enable to Output Valid tOE 7 8 9 10 Chip Select to Output in Low Z t CLZ 1 1 Output Enable to Output in Low Z t OLZ 1 0 Chip Disable to Output in High Z t CHZ 1 7 12 12 12 ns Output Disable to Output in High Z t OHZ 1 7 12 12 12 ns 12 0 20 15 0 0 2 20 ns 0 2 0 ns 17 ns ns ns 2 0 ns 0 ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (V CC = 5.0V, V SS = 0V, TA = -55°C TO +125°C) Parameter Symbol Read Cycle -12 Min -15 Max Min -17 Max Min -20 Max Min Units Max Write Cycle Time t WC 12 15 17 20 ns Chip Select to End of Write t CW 10 13 15 15 ns Address Valid to End of Write tAW 10 13 15 15 ns Data Valid to End of Write t DW 8 10 11 12 ns Write Pulse Width t WP 10 13 15 15 ns Address Setup Time t AS 0 2 2 2 ns Address Hold Time t AH 0 0 0 0 ns Output Active from End of Write t OW 1 2 2 2 3 Write Enable to Output in High Z t WHZ 1 7 0 Data Hold Time tDH 1. This parameter is guaranteed by design but not tested. 8 0 9 0 ns 11 ns 0 AC TEST CONDITIONS FIG. 4 AC TEST CIRCUIT Parameter IOL Current Source VZ ≈ 1.5V (Bipolar Supply) D.U.T. Ceff = 50 pf Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. IOH Current Source 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPS512K32-XBX White Electronic Designs FIG. 5 TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tACS ADDRESS OE tOH DATA I/O tCHZ tCLZ tAA tOE PREVIOUS DATA VALID DATA VALID tOLZ DATA I/O HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) FIG. 6 WRITE CYCLE - WE C ONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tDW tWHZ tDH DATA VALID DATA I/O WRITE CYCLE 1, WE CONTROLLED FIG. 6 WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 tDH 4 tOHZ DATA VALID WEDPS512K32-XBX White Electronic Designs PACKAGE 756: 143 BALL GRID A RRAY BOTTOM VIEW 12 11 10 9 8 7 6 5 4 3 2 1 A 16.25 (0.640) MAX B C D 13.97 (0.550) BSC 1.27 (0.050) BSC E F G H J K L M 0.61 (0.024) BSC 13.97 (0.550) BSC 2.21 (0.087) MAX 18.25 (0.719) MAX ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs WEDPS512K32-XBX ORDERING INFORMATION WED P S 512K 32 - XX X X WHITE ELECTRONIC DESIGNS CORP. PLASTIC SRAM ORGANIZATION, 512Kx32 User configurable as 1Mx16 or 2Mx8 ACCESS TIME (ns) PACKAGE TYPE: B = 143 PBGA, 16mm x 18mm, 288mm 2 DEVICE GRADE: M = M ILITARY S CREENED I = INDUSTRIAL C = C OMMERCIAL White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 -55°C TO +125°C -40°C TO 85°C 0°C TO +70°C 6 White Electronic Designs WEDPS512K32-XBX Document Title 512K x 32 SRAM Multi-Chip Package Revision History Rev # History ReleaseDate Status Rev 0 Initial Release March, 2002 Advanced Rev 1 Switch Rows and Columns header position (Pg. 1) March, 2002 Advanced Rev 2 Switch Rows and Columns header position (Pg. 1) May, 2002 Advanced Rev 3 Change mechanical outline to more accurate design (Pg. 1, 5) May, 2002 Advanced Rev 4 Remove references to 25-55ns speed grades (Pg. 1, 2, 3) August 2002 Advanced Rev 5 Changes (Pg. 1, 2) 1.1 Add Thermal Resistance Table 1.2 Change product status to Final January, 2003 Final 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com