White Electronic Designs WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES ■ Access Times of 70, 85, 100, 120ns ■ 5V Power Supply ■ Packaging ■ Low Power CMOS • 68 lead, Hermetic CQFP (G2T)1, 22.4mm (0.880 inch) square. 4.57mm (0.180 inch) high (Package 509) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as 512Kx32, User Configurable as 1Mx16 or 2Mx8 ■ Commercial, Industrial and Military Temperature Ranges ■ TTL Compatible Inputs and Outputs ■ Weight • WS512K32-XG2TX1 - 8 grams typical Note 1: Package Not Recommended for New Designs. This product is subject to change without notice. FIGURE 1 – PIN CONFIGURATION FOR WS512K32-XG2TX1 PIN DESCRIPTION TOP VIEW NC A0 A1 A2 A3 A4 A5 CS#3 GND CS#4 WE#1 A6 A7 A8 A9 A10 VCC I/O0-31 A0-18 WE#1-4 CS#1-4 OE# VCC GND NC 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 BLOCK DIAGRAM W E # 1 CS# 1 W E # 2 CS# 2 W E # 3 CS# 3 W E # 4 CS# 4 OE# A0-18 NC NC A18 A17 WE#2 WE#3 WE#4 A16 CS#1 OE# CS#2 A15 A14 A13 A12 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 A11 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected 512K x 8 512K x 8 512K x 8 512K x 8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 Note 1: Package Not Recommended for New Designs. March 2005 Rev. 4 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS512K32-XXX ABSOLUTE MAXIMUM RATINGS Parameter CAPACITANCE Symbol Min Max Unit Operating Temperature TA -55 +125 °C TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 VCC+0.5 V Junction Temperature TJ 150 °C 7.0 V Storage Temperature Supply Voltage VCC -0.5 TA = +25°C Parameter Symbol Conditions Max Unit OE# capacitance COE VIN = 0 V, f = 1.0 MHz 50 pF WE#1-4 capacitance CWE VIN = 0 V, f = 1.0 MHz 15 pF CQFP G2T CS#1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 50 pF This parameter is guaranteed by design but not tested. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 VCC + 0.3 V Input Low Voltage VIL -0.5 +0.8 V Parameter Operating Temp (Mil) TA -55 +125 °C LOW CAPACITANCE CQFP TA = +25°C TRUTH TABLE CS# OE# WE# H X X Mode Data I/O Power Standby High Z Standby L L H Read Data Out Active L H H Out Disable High Z Active L X L Write Data In Active Symbol Conditions OE# capacitance COE VIN = 0 V, f = 1.0 MHz Max Unit 32 pF CQFP G4 capacitance CWE VIN = 0 V, f = 1.0 MHz 32 pF CS#1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 15 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 15 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 32 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol Conditions Max Units Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = GND to VCC 10 µA ICC x 32 CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 200 mA Standby Current ISB CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 4.0 mA Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 VOH IOH = -1.0mA, VCC = 4.5 Operating Supply Current x 32 Mode Output High Voltage NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V Min 2.4 V V DATA RETENTION CHARACTERISTICS (TA = -55°C to +125°C) Parameter Data Retention Supply Voltage Data Retention Current March 2005 Rev. 4 Symbol Conditions Min VDR CS# ≥ VCC -0.2V 2.0 ICCDR1 VCC = 3V 2 Typ 0.4 Max Units 5.5 V 1.6 mA White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS512K32-XXX AC CHARACTERISTICS VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C Parameter -70 Symbol Read Cycle Read Cycle Time tRC Address Access Time tAA Output Hold from Address Change tOH Chip Select Access Time tACS Min -85 Max 70 Min -100 Max 85 -120 Max 100 70 5 Min Units ns 100 5 5 120 ns 120 ns 60 ns 5 85 35 Max 120 85 70 Min ns 100 40 50 Output Enable to Output Valid tOE Chip Select to Output in Low Z tCLZ1 10 10 10 10 Output Enable to Output in Low Z tOLZ1 5 5 5 5 Chip Disable to Output in High Z tCHZ1 25 25 35 35 ns Output Disable to Output in High Z tOHZ1 25 25 35 35 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C Parameter Symbol Write Cycle -15* Min -17 Max Min -20 Max Min -25 Max Min Max Units Write Cycle Time tWC 70 85 100 120 ns Chip Select to End of Write tCW 60 75 80 100 ns Address Valid to End of Write tAW 60 75 80 100 ns Data Valid to End of Write tDW 30 30 40 40 ns Write Pulse Width tWP 50 50 60 60 ns Address Setup Time tAS 0 0 0 0 ns Address Hold Time tAH 5 5 5 5 ns Output Active from End of Write tOW1 5 5 5 5 Write Enable to Output in High Z tWHZ1 Data Hold from Write Time 25 0 tDH 25 ns 35 0 0 35 ns 0 ns 1. This parameter is guaranteed by design but not tested. AC TEST CONDITIONS FIGURE 2 – AC TEST CIRCUIT Parameter Current Source IOL Ceff+50pf March 2005 Rev. 4 V Input Rise and Fall 5 ns 1.5 V Output Timing Reference Level 1.5 V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. VZ 1.5V (Bipolar Supply) Current Source Unit VIL = 0, VIH = 3.0 Input and Output Reference Level D.U.T. Typ Input Pulse Levels IOH 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS512K32-XXX FIGURE 3 – TIMING WAVEFORM - READ CYCLE tRC ADDRESS tRC tAA ADDRESS CS# tAA tCHZ tACS tOH DATA I/O tCLZ OE# DATA VALID PREVIOUS DATA VALID tOE tOHZ tOLZ DATA I/O READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) HIGH IMPEDANCE DATA VALID READ CYCLE 2 (WE# = VIH) FIGURE 4 – WRITE CYCLE - WE# CONTROLLED tWC ADDRESS tAW tAH tCW CS# tAS tWP WE# tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED FIGURE 5 – WRITE CYCLE - CS# CONTROLLED tWC ADDRESS tAW tAS tAH tCW CS# tWP WE# tDW DATA I/O tDH DATA VALID WRITE CYCLE 2, CS# CONTROLLED March 2005 Rev. 4 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS512K32-XXX PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)1 25.15 (0.990) ± 0.26 (0.010) SQ 4.57 (0.180) MAX 22.36 (0.880) ± 0.26 (0.010) SQ 0.27 (0.011) ± 0.04 (0.002) 0.25 (0.010) REF 24.03 (0.946) ± 0.26 (0.010) R 0.25 (0.010) 0.19 (0.007) ± 0.06 (0.002) 1° / 7° 1.0 (0.040) ± 0.127 (0.005) 23.87 (0.940) REF DETAIL A 1.27 (0.050) TYP SEE DETAIL “A” 0.38 (0.015) ± 0.05 (0.002) 20.3 (0.80) REF Note 1: Package Not Recommended for New Designs. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES March 2005 Rev. 4 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS512K32-XXX ORDERING INFORMATION W S 512K 32 - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to 85°C C = Commercial 0°C to +70°C PACKAGE TYPE: G2T1 = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 509) ACCESS TIME (ns) ORGANIZATION, 512Kx32 User configurable as 1Mx16 or 2Mx8 SRAM WHITE ELECTRONIC DESIGNS CORP. Note 1: Package Not Recommended for New Designs. DEVICE TYPE 512K x 32 SRAM Module 512K x 32 SRAM Module 512K x 32 SRAM Module 512K x 32 SRAM Module March 2005 Rev. 4 SPEED PACKAGE 120ns 100ns 85ns 70ns 6 SMD NO. 68 lead CQFP (G2T) 1 5962-94611 01HMX 68 lead CQFP (G2T) 1 5962-94611 02HMX 68 lead CQFP (G2T) 1 5962-94611 03HMX 68 lead CQFP (G2T) 1 5962-94611 04HMX White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com