FS16...H STANDARD SCR TO220-AB On-State Current Gate Trigger Current 16 Amp > 2 mA to < 40 mA Off-State Voltage 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. K A These parts are intended for general purpose high current applications where moderate gate insensitivity is required. G Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS Min. 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. CONDITIONS RGK = 1 KΩ Max. Unit 16 10 200 190 180 5 4 10 1 +125 +150 260 A A A A A 2s V A W W ºC ºC ºC VOLTAGE B 200 D 400 Unit M 600 V Dec - 02 FS16...H STANDARD SCR Electrical Characteristics SYMBOL PARAMETER CONDITIONS IGT Gate Trigger Current VD = 12 VDC , RL = 33Ω. Tj = 25 ºC IDRM / IRRM Off-State Leakage Current VTM VGT VGD On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage VD = VDRM , RGK = 220Ω Tj = 125 ºC VR = VRRM , Tj = 25 ºC at IT = 32 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ Tj = 125 ºC IH IL dv / dt Latching Current Critical Rate of Voltage Rise di / dt Critical Rate of Current Rise IG = 2 x IGT Rth(j-c) Holding Current MIN MAX MAX MAX MAX MAX MIN MAX IT = 500 mA , Gate open, Tj = 25 ºC IG = 1.2 IGT MAX VD = 0.67 x VDRM , Gate open Tj = 125 ºC MIN Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC SENSITIVITY Unit 10 2 25 mA 14 4 40 mA µA V V V 2 5 1.6 1.3 0.2 40 50 mA 60 500 90 1000 mA V/µs 50 A/µs Thermal Resistance Junction-Case for DC 1.1 ºC/W Rth(j-a) Thermal Resistance Junction-Amb 60 ºC/W Vt0 Threshold Voltage Tj = 125 ºC MAX 0.77 V Rd Dynamic resistance Tj = 125 ºC MAX 23 mΩ MIN PART NUMBER INFORMATION F S 16 10 B H 00 TU FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Dec - 02 FS16...H STANDARD SCR Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus case temperature. IT(av)(A) P (W) 16 18 14 16 12 14 10 12 8 10 8 6 6 4 4 2 0 2 IT(av)(A) 0 0 0 1 2 3 4 5 6 7 8 9 10 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Tc (ºC) 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current , holding current and latching current versus junction temperature. K = [Zth(j-c) / Rth (j-c)] IGT, IH, IL (Tj) / IGR, IH, IL (Tj = 25 ºC) 2.5 1.0 2.0 IGT 0.5 1.5 IH & IL 1.0 0.2 0.5 0.1 1E-3 tp (s) 1E-2 1E-1 1E+0 Fig. 5: Surge peak on-state current versus number of cycles. 0.0 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) I TSM (A) 200 Tj initial = 25 ºC 150 1000 ITSM 100 I2 t 100 50 Number of cycles 0 1 10 100 1000 tp(ms) 10 1 10 Dec - 02 FS16...H STANDARD SCR Fig. 8: On-state characteristics (maximum values). ITM(A) 1000 100 Tj = Tj max. Tj max Vto = 0.77 V Rt = 23 mΩ 10 Tj = 25 ºC VTM(V) 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-220AB REF. c B b2 L F øI A 14 c2 a1 13 12 a2 M b1 e c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L I2 I3 M Min. 15.20 DIMENSIONS Milimeters Nominal Max. 15.90 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 16.40 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70 2.60 Dec - 02