FS04...D SURFACE MOUNT SCR DPAK (Plastic) On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V A K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER On-state Current Average On-State Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS Min. 180º Conduction Angle, TC = 115 ºC Half Cycle, Θ=180º, TC = 115 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz t = 10 ms, Half Cycle IGR = 10µA 20 µs max. 20 µs max. 20 ms max. 4 2.5 33 30 4.5 8 -40 -40 10s max CONDITIONS RGK = 1 KΩ Max. Unit 1.2 3 0.2 +125 +150 260 A A A A A 2s V A W W ºC ºC ºC VOLTAGE B 200 D 400 Unit M 600 V Jun - 02 FS04...D SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER CONDITIONS IGT Gate Trigger Current IDRM / IRRM Off-State Leakage Current VTM VGT VGD On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage IH IL dv / dt Holding Current Latching Current di / dt Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb (S=0.5 cm2) Rth(j-c) Rth(j-a) MIN MAX VD = VDRM , RGK = 220Ω, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX MAX at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC MAX VD =VDRM, RL = 3.3 KΩ, RGK = 220Ω MIN Tj = 125 ºC MAX IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC MAX VD = 0.67 x VDRM , RGK = 220Ω, MIN Tj = 125 ºC VD = 12 VDC , RL = 33Ω. Tj = 25 ºC Critical Rate of Voltage Rise Unit SENSITIVITY 01 1 20 04 15 50 02 200 1 5 1.6 0.8 0.1 03 20 200 mA µA V V V 5 6 10 10 MIN 5 µA 10 mA mA V/µs 50 A/µs 3 ºC/W 70 ºC/W PART NUMBER INFORMATION F S 04 01 B D 00 TR FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Jun - 02 FS04...D SURFACE MOUNT SCR Fig. 1: Maximum average power dissipation versus average on-state current Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink+contact. P (W) T case (ºC) P (W) 4.0 4.0 360 º 3.5 Rth= 10C/W Rth= 15C/W 3.5 115 Rth= 5C/W α 3.0 Rth= 0C/W Rth= 37C/W 3.0 2.5 2.5 2.0 2.0 α = 80 º 120 1.5 1.5 1.0 1.0 0.5 α=180º 0.5 IT(AV)(A) 0 0 0.5 1 1.5 2 2.5 3 0 0 3.5 Fig. 3: Average and DC on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) 25 50 75 100 125 Tamb (ºC) 125 Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. I T(AV) (A) K=[Zth(j-c) / Rth(j-c)] 2.0 1.0 1.8 DC 1.6 1.4 0.5 1.2 1.0 0.8 α = 180 º 0.2 0.6 0.4 0.2 Tamb (ºC) 0 0 25 50 75 100 0.1 125 tp (s) 1E-3 Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration. (recommended pad layout) 1E-1 1E+0 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) K=[Zth(j-a) / Rth(j-a)] 1.00 1E-2 Ih (Tj) Ih (Tj = 25 ºC) 2.0 1.8 1.6 1.4 1.2 0.10 Igt 1.0 0.8 0.6 0.4 Ih 0.2 tp (s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Tj (ºC) 0 -40 -20 0 20 40 60 80 100 120 140 Jun- 02 FS04...D SURFACE MOUNT SCR Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp <10 ms, and corresponding value of I2t. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A). I2t (A2s) I TSM (A) 35 100 Tj initial = 25 ºC F= 50Hz Tj initial = 25 ºC 30 ITSM 25 20 10 I2 t 15 10 5 Number of cycles 0 1 10 100 tp(ms) 1 1000 1 Fig. 8: On-state characteristics (maximum values). 2 5 10 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). ITM(A) I th(j-a) (ºC/W) 100 50.0 Tj max Vto = 0.85 V Rd =90mΩ 80 10.0 Tj=Tj max 60 40 1.0 Tj25 ºC 20 VTM(V) 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 0 S(cm) 0 2 4 6 8 10 12 14 16 18 20 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T(ºC) 250 245ºC 215ºC 200 Epoxy FR4 board 150 100 Metal-backed board 50 t(s) 0 0 40 80 120 160 200 240 280 320 360 Jun - 02 FS04...D SURFACE MOUNT SCR PACKAGE MECHANICAL DATA DPAK TO 252-AA REF. 8º±2º A ø1x0.15 E1 c2 E L3 8º±2º 8º±2º D1 D H 1.6 8º±2º L4 8º±2º L e b 4.57 Typ. L2 A1 1.067±0.013 A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 DIMENSIONS Milimeters Nominal 2.3±0.18 0.12 0.75±0.1 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.90±0.15 2.6±0.05 0.5±0.013 1.20±0.05 0.83±0.1 Max. 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g FOOT PRINT 6.7 6.7 3 3 1.6 1.6 2.3 2.3 Jun - 02