3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts (2.7~3.6) Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage Metal II pitch (line/space) 3/4 µm • 10 Volts High Voltage Option Poly pitch (line/space) 3/3 µm • ProToDuctionTM Option for low cost prototypes, Contact 3x3 µm • 150 mm wafers. Via 3x3 µm Gate geometry 3 µm P-well junction depth 4 µm N+ junction depth 0.40 µm P+ junction depth 0.55 µm Gate oxide thickness 470 Å Inter poly oxide thick. 650 Å Description The Dalsa Semiconductor 3µm CMOS double poly / double metal process family offers three operating voltage options. The standard process has a maximum operating voltage of 7 volts while the high voltage option allows 11 volts operation. The third option is aimed at the 3 volts market. It offers low and matched threshold voltages for improved dynamic range needed in mixed analog/digital applications. MOSFET Electrical parameters 3 MICRON - 10 volts Vt (50x3µm) 3 MICRON - 5 volts 3 MICRON - 3 volts N Channel min. typ. max. P Channel min. typ. max. N Channel min. typ. max. P Channel min. typ. max. 0.6 0.6 0.6 0.6 0.8 1.0 0.8 1.0 0.8 1.0 0.8 1.0 Units Conditions 0.35 0.50 0.65 V saturation region 10 V : Vds=Vgs=5v 3&5 V: Vds=Vgs=3v N Channel min. typ. max. P Channel min. typ. max. 0.35 0.50 0.65 Ids (50x3µm) 82 36 22 9 42 17 µA/µm Body factor (50x50µm) 0.5 0.6 0.6 0.4 0.5 0.2 √v 14 V Ids = 1µA 92 mV/ dec 5v : Vds=0.1v 3v : Vds=3.6v 18 V Ids = 14µA 2.2 µm L drawn = 3µm Bvdss 16 Subthres. Slope Field thresh. L effective 21 16 94 12 20 2.9 www.dalsasemi.com 18 10 100 12 19 2.5 16 10 120 12 27 2.4 18 10 110 12 19 16 10 92 12 2.2 For More Information: DALSA Semiconductor Sales 18 Boulevard de l’Aéroport Bromont, Québec, Canada J2L 1S7 26 2.4 12 Tel : Fax email: (450) 534-2321 ext. 1448 (800) 718-9701 (450) 534-3201 [email protected] 3 Micron CMOS Process Family(cont’d) Resistances (Ω /sq.) Capacitances (fF/µm2) 3 µm 5 volts & 3 volts min. 3 µm 5 volts & 3 volts typ. Pwell max. 17000 min. typ. max. Inter-poly 0.44 0.54 0.63 0.69 0.73 0.78 Pfield in Pwell 2400 3600 4800 Gate oxide N+ 20 28 35 N+ Junction 0.17 P+ 80 100 120 P+ Junction 0.12 Poly gate 15 23 30 Poly capacitor 75 100 125 Metal I 0.038 Metal II 0.038 Bipolar gain1 3 µm - 5 volts min. typ. NPN vertical 1 Test max. 700 condition : Vce = 5 volts FIG 1 : I-V Characteristics for a 50x3µm N-MOSFET (3µm 5 volts process) FIG 2 : I-V Characteristics for a 50x3µm P-MOSFET (3µm 5 volts process) 5 -2.0 Vgs = 5 volts Vgs = -5 volts 4 -1.5 Vgs = -4 volts 3 2 Ids (mA) Vgs = 3 volts -1.0 Vgs = -3 volts -0.5 1 Vgs = 2 volts Vgs = -2 volts 0 0 0 1 2 3 4 5 0 -1 -2 Vds (volts) FIG 3 : Subthreshold Characteristics at Vds=0.1 volts for a 50x3µm N-MOSFET (3µm 5 volts Process) 10-03 100 -5 10-04 -36 -05 10 10-05 -30 10-06 75 10-06 50 10-09 10-10 25 -11 Ids (A) 10-08 Ids (mA) 10-07 10-07 Ids (A) -4 FIG 4 : Subthreshold Characteristics at Vds=-0.1 volts for a 50x3µm P-MOSFET (3µm 5 volts Process) 10-04 10 -3 Vds (volts) -24 10-08 -18 10-09 10-10 -12 10-11 -6 10-12 10-12 10-13 0 0.5 1.0 1.5 0 2.0 10-13 0 Vgs (volts) Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements. For full process specifications contact a Dalsa Semicoonductor sales office or representative. -0.5 -1.0 Vgs (volts) -1.5 -0 -2.0 Ids (mA) Ids (mA) Vgs = 4 volts