Databook.fxp 1/14/99 11:33 AM Page C-8 C-8 01/99 VCR2N, VCR4N, VCR7N N-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C. Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control At 25°C free air temperature: Static Electrical Characteristics Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating VCR2N VCR4N NJ72 NJ16 Min Max – 15 Min – 15 V 10 mA 300 mW 2.4 mW/°C Process Max Unit V IG = – 1 µA, VDS = ØV – 0.2 nA VGS = – 15V, VDS = ØV – 15 Test Conditions Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) –1 – 3.5 – 3.5 –7 V ID = – 1 µA, VDS = 10V Drain Source ON Resistance rds(on) 20 60 200 600 Ω VGS = ØV, ID = ØA Drain Gate Capacitance Cdg 7.5 3 pF VDG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance Csg 7.5 3 pF VDG = 10V, ID = ØA f = 1 MHz –5 Dynamic Electrical Characteristics f = 1 kHz VCR7N NJ01 At 25°C free air temperature: Static Electrical Characteristics Min Process Max Unit V IG = – 1 µA, VDS = ØV – 0.1 nA VGS = – 15V, VDS = ØV – 15 Test Conditions Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) – 2.5 –5 V ID = – 1 µA, VDS = 10V rds(on) 4000 8000 Ω VGS = ØV, ID = ØA Dynamic Electrical Characteristics Drain Source ON Resistance f = 1 kHz Drain Gate Capacitance Cdg 1.5 pF VDG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance Csg 1.5 pF VDG = 10V, ID = ØA f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 VCR2N & VCR4N TOÐ18 Package VCR7N TOÐ72 Package See Section G for Outline Dimensions See Section G for Outline Dimensions Pin Configuration Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1 Source, 2 Drain, 3 Gate & Case www.interfet.com