INTERFET VCR2N

Databook.fxp 1/14/99 11:33 AM Page C-8
C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
¥
¥
¥
¥
Absolute maximum ratings at TA = 25¡C.
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
At 25°C free air temperature:
Static Electrical Characteristics
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
VCR2N
VCR4N
NJ72
NJ16
Min
Max
– 15
Min
– 15 V
10 mA
300 mW
2.4 mW/°C
Process
Max
Unit
V
IG = – 1 µA, VDS = ØV
– 0.2
nA
VGS = – 15V, VDS = ØV
– 15
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
–1
– 3.5
– 3.5
–7
V
ID = – 1 µA, VDS = 10V
Drain Source ON Resistance
rds(on)
20
60
200
600
Ω
VGS = ØV, ID = ØA
Drain Gate Capacitance
Cdg
7.5
3
pF
VDG = 10V, IS = ØA
f = 1 MHz
Source Gate Capacitance
Csg
7.5
3
pF
VDG = 10V, ID = ØA
f = 1 MHz
–5
Dynamic Electrical Characteristics
f = 1 kHz
VCR7N
NJ01
At 25°C free air temperature:
Static Electrical Characteristics
Min
Process
Max
Unit
V
IG = – 1 µA, VDS = ØV
– 0.1
nA
VGS = – 15V, VDS = ØV
– 15
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
– 2.5
–5
V
ID = – 1 µA, VDS = 10V
rds(on)
4000
8000
Ω
VGS = ØV, ID = ØA
Dynamic Electrical Characteristics
Drain Source ON Resistance
f = 1 kHz
Drain Gate Capacitance
Cdg
1.5
pF
VDG = 10V, IS = ØA
f = 1 MHz
Source Gate Capacitance
Csg
1.5
pF
VDG = 10V, ID = ØA
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
VCR2N & VCR4N
TOÐ18 Package
VCR7N
TOÐ72 Package
See Section G for Outline Dimensions
See Section G for Outline Dimensions
Pin Configuration
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com