Databook.fxp 1/13/99 2:09 PM Page B-8 B-8 01/99 2N3994, 2N3994A P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ High Speed Commutators At 25°C free air temperature: Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N3994 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS 25 Gate Source Cutoff Voltage VGS(OFF) 1 Drain Saturation Current (Pulsed) IDSS Drain Reverse Current IDGO Drain Cutoff Current ID(OFF) Max 2N3994A Min Max Process PJ99 Unit 25 5.5 –2 1 5.5 –2 25 V 25 V – 10 mA 300 mW 2.4 mW/°C Test Conditions V IG = 1 µA, VDS = ØV V VDS = – 10V, ID = – 1 µA mA VDS = – 10V, VGS = ØV – 1.2 – 1.2 nA VDG = – 15V, IS = ØA – 1.2 – 1.2 µA VDG = – 15V, IS = ØA – 1.2 – 1.2 nA VDS = – 10V, VGS = 10V –1 –1 µA VDS = – 10V, VGS = 10V TA = 150°C 300 300 Ω VGS = ØV, ID = Ø A f = 1 kHz 10 mS VDS = – 10V, VGS = ØV f = 1 kHz TA = 150°C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transmittance | Yfs | Common Source Input Capacitance Ciss 16 12 pF VDS = – 10V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 3.5 pF VDS = Ø, VGS = 10V f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 4 10 5 TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate, 3 Drain, 4 Case www.interfet.com