Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Max – 40 2N4392 Min Max – 40 – 100 2N4393 Min – 200 Unit Test Conditions V IG = – 1µA, VDS = ØV – 100 pA VGS = – 20V, VDS = ØV – 200 nA VGS = – 20V, VDS = ØV – 0.5 –3 V VDS = – 20V, ID = 1 nA 1 V IG = 1 mA, VDS = ØV 5 30 mA VDS = 20V, VGS = ØV 100 pA VDS = 20V, VGS = – 5V 200 nA VDS = 20V, VGS = – 5V 100 pA VDS = 20V, VGS = – 7V 200 nA VDS = 20V, VGS = – 7V 100 pA VDS = 20V, VGS = – 12V 200 nA VDS = 20V, VGS = – 12V V VGS = ØV, ID = 3 mA V VGS = ØV, ID = 6 mA V VGS = ØV, ID = 12 mA Ω VGS = ØV, ID = 1 mA –4 – 10 50 150 – 200 Process NJ132 Max – 40 – 100 – 40 V 50 mA 1.8 W 12 mW/°C –2 –5 25 75 1 1 ID(OFF) 0.4 Drain Source ON Voltage VDS(ON) 0.4 Static Drain Source ON Resistance rDS(ON) 30 Drain Source ON Resistance rds(on) Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Crss 0.4 TA = 150°C TA = 150°C TA = 150°C TA = 150°C 60 100 30 60 100 Ω VGS = ØV, ID = ØA f = 1 kHz 14 14 14 pF VDS = 20V, VGS = ØV f = 1 kHz 3.5 pF VDS = ØV, VGS = – 5V f = 1 kHz pF VDS = ØV, VGS = – 7V f = 1 kHz pF VDS = ØV, VGS = – 12V f = 1 kHz ns VDD = 10V, VGS(ON) = ØV Dynamic Electrical Characteristics 3.5 3.5 Switching Characteristics Turn ON Delay Time td(on) 15 Rise Time tr 5 5 5 ns Turn OFF Delay Time td(off) 20 35 50 ns ID(ON) 12 6 3 Fall Time tf 15 20 30 ns VGS(OFF) – 12 –7 –5 TOÐ18 Package Surface Mount See Section G for Outline Dimensions SMP4391, SMP4392, SMP4393 15 15 2N4391 2N4392 2N4393 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 mA V Databook.fxp 1/14/99 11:30 AM Page B-15 B-15 01/99 2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches 2N4856, 2N4857, 2N4858 – 40 V – 40 V 1.8 W 10 mW/°C 50 mA Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Power Derating Continuous Forward Gate Current 2N4856 2N4859 At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 V(BR)GSS Gate Reverse Current 2N4856, 2N4857, 2N4858 IGSS Gate Reverse Current 2N4859, 2N4860, 2N4861 IGSS Gate Source Cutoff Voltage VGS(OFF) –4 Drain Saturation Current (Pulsed) IDSS 50 Drain Cutoff Current ID(OFF) Drain Source ON Voltage VDS(ON) Max 2N4857 2N4860 Min Max 2N4858 2N4861 Min 2N4859, 2N4860, 2N4861 – 30 V – 30 V 1.8 W 10 mW/°C 50 mA Process NJ132 Max Unit Test Conditions – 40 – 40 – 40 V IG = – 1 µA, VDS = ØV – 30 – 30 – 30 V IG = – 1 µA, VDS = ØV – 250 – 250 – 250 pA VGS = – 20V, VDS = ØV – 500 – 500 – 500 nA VGS = – 20V, VDS = ØV – 250 – 250 – 250 pA VGS = – 15V, VDS = ØV – 500 – 500 – 500 nA VGS = – 15V, VDS = ØV – 10 –2 –6 – 0.8 –4 V VDS = 15V, ID = 0.5 nA 20 100 8 80 mA VDS = 15V, VGS = ØV 250 250 250 pA VDS = 15V, VGS = – 10V 500 500 500 nA VDS = 15V, VGS = – 10V 0.75 (20) 0.5 (10) 0.5 (5) V (mA) TA = 150°C TA = 150°C TA = 150°C VGS = ØV, ID = ( ) Dynamic Electrical Characteristics Common Source ON Resistance rds(on) 25 40 60 Ω VGS = ØV, ID = Ø A f = 1 kHz Common Source Input Capacitance Ciss 18 18 18 pF VDS = ØV, VGS = – 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 8 8 8 pF VDS = ØV, VGS = – 10V f = 1 MHz td(on) 6 (20) [–10] 6 (10) [– 6] 10 (5) [– 4] ns (mA) [V] tr 3 (20) [–10] 4 (10) [– 6] 10 (5) [– 4] ns (mA) [V] td(off) 25 (20) [–10] 50 (10) [– 6] 100 (5) [– 4] ns (mA) [V] Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time TOÐ18 Package Surface Mount See Section G for Outline Dimensions SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861 Pin Configuration VDD = 10V, VGS = ØV ID(ON) = ( ) VGS(OFF) = [ ] (2N4856, 2N4859) RL = 465Ω (2N4857, 2N4860) RL = 953Ω (2N4858, 2N4861) RL = 1910Ω 1 Source, 2 Drain, 3 Gate &Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-45 B-45 01/99 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Low On Resistance Switches ¥ Choppers IFN5432 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS – 25 IGSS Gate Source Cutoff Voltage VGS(OFF) –4 Drain Saturation Current (Pulsed) IDSS 150 ID(OFF) Drain Source ON Voltage VDS Static Drain Source ON Resistance rDS(ON) Min – 10 IFN5434 Min – 200 –3 –9 100 –1 Process NJ903 Max Unit V IG = – 1µA, VDS = ØV – 200 pA VGS = – 15V, VDS = ØV – 200 nA VGS = – 15V, VDS = ØV –4 V VDS = 5V, IG = 3 nA – 25 – 200 – 200 2 Max – 25 – 200 Gate Reverse Current Drain Cutoff Current Max IFN5433 – 25 V 100 mA 300 mW 2.4 mW/°C 30 Test Conditions mA VDS = 15V, VGS = ØV pA VDS = 5V, VGS = – 10V 200 nA VDS = 5V, VGS = – 10V 100 mV VGS = ØV, ID = 10 mA 7 10 Ω VDS = ØV, ID = 10 mA 200 200 200 200 200 50 70 5 TA = 150°C TA = 150°C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 5 7 10 Ω VGS = ØV, ID = ØA f = 1 kHz Common Source Input Capacitance Ciss 60 60 60 pF VDS = ØV, VGS = – 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 20 20 20 pF VDS = ØV, VGS = – 10V f = 1 MHz Turn ON Delay Time td(on) 4 4 4 ns Rise Time tr 1 1 1 ns Turn OFF Delay Time td(off) 6 6 6 ns Fall Time tf 30 30 30 ns VDD = 1.5 V, VGS(ON) = ØV VGS(OFF) = – 12V, ID(ON) = 10 mA (IFN5432) RL = 145 Ω (IFN5433) RL = 143 Ω (IFN5433) RL = 140 Ω Switching Characteristics TOÐ52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 1:02 PM Page B-49 B-49 01/99 J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J108 Static Electrical Characteristics Min J109 Max Gate Source Breakdown Voltage V(BR)GSS – 25 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) –3 Drain Saturation Current (Pulsed) IDSS 80 Drain Cutoff Current ID(OFF) 3 Drain Source ON Resistance rds(on) Drain Gate Capacitance Min Process NJ450 Max – 25 –3 – 10 –2 – 25 V 50 mA 360 mW 3.27 mW/°C Unit Test Conditions V IG = – 1 µA, VDS = ØV –3 nA VGS = – 15V, VDS = ØV –6 V VDS = 5V, ID = 1 µA 40 mA VDS = 15V, VGS = ØV 3 nA VDS = 5V, VGS = – 10V 8 12 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Cgd 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance Cgs 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = ØV f = 1 MHz Dynamic Electrical Characteristics Switching Characteristics Typ Typ Turn ON Delay Time td(on) 3 3 ns Rise Time tr 1 1 ns Turn OFF Delay Time td(off) 4 4 ns Fall Time tf 18 18 ns TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ108, SMPJ109 VDD VGS(OFF) RL J108 J109 1.5 – 12 150 1.5 –7 150 V V Ω Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-50 B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J110 Static Electrical Characteristics Min J110A Max Gate Source Breakdown Voltage V(BR)GSS – 25 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) 3 Drain Source ON Resistance rds(on) Drain Gate Capacitance Min Max – 25 –3 – 0.5 –4 10 – 0.5 Process NJ450 Unit Test Conditions V IG = – 1 µA, VDS = ØV –3 nA VGS = – 15V, VDS = ØV –4 V VDS = 5V, ID = 1 µA 10 – 25 V 50 mA 360 mW 3.27 mW/°C mA VDS = 15V, VGS = ØV 3 nA VDS = 5V, VGS = – 10V 18 25 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Cgd 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance Cgs 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = ØV f = 1 MHz Dynamic Electrical Characteristics Switching Characteristics Typ Typ Turn ON Delay Time td(on) 4 4 ns Rise Time tr 1 1 ns Turn OFF Delay Time td(off) 6 6 ns Fall Time tf 30 30 ns VDD VGS(OFF) RL J110 J110A 1.5 –5 150 1.5 –5 150 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ110, SMPJ110A V V Ω Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-51 B-51 01/99 J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J111 At 25°C free air temperature Static Electrical Characteristics Min J112 Max – 35 Min J113 Max Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS – 35 Gate Source Cutoff Voltage VGS(OFF) –3 Drain Saturation Current (Pulsed) IDSS 20 Drain Cutoff Current ID(OFF) –1 –1 rds(on) 30 Drain Gate Capacitance Cdg Source Gate Capacitance Cgs Drain Gate + Source Gate Capacitance Cgd + Cgs Process NJ132 Max Unit V IG = – 1µA, VDS = ØV –1 nA VGS = – 15V, VDS = ØV V VDS = 5V, ID = 1 µA – 35 –1 – 10 Min –1 –1 –5 5 – 35 V 50 mA 360 mW 3.27 mW/°C –3 2 Test Conditions mA VDS = 15V, VGS = ØV –1 nA VDS = 15V, VGS = – 10V 50 100 Ω VGS = ØV, VDS = 0.1V f = 1 kHz 5 5 5 pF VDS = ØV, VGS = – 10V f = 1 MHz 5 5 5 pF VDS = ØV, VGS = – 10V f = 1 MHz 28 28 28 pF VDS = VGS = ØV f = 1 MHz ns J111 Dynamic Electrical Characteristics Drain Source ON Resistance Switching Characteristics Typ Typ Typ 7 7 7 Turn ON Delay Time td(on) Rise Time tr 6 6 2 ns VDD 10 10 10 V Turn OFF Delay Time td(off) 20 20 20 ns VGS(OFF) – 12 –7 –5 V Fall Time tf 15 15 15 ns RL 800 1600 3200 Ω TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ111, SMPJ112, SMPJ113 J112 J113 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: 2N5020 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GDO Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max 25 2N5021 Min Process PJ32 Unit 25 1.5 – 0.3 – 1.2 Test Conditions V IG = 1µA, VDS = ØV 1 nA VGS = 15V, VDS = ØV 0.5 2.5 V VDS = – 15V, ID = 1 nA –1 – 3.5 mA VDS = – 15V, VGS = ØV 1.5 6 mS VDS = – 15V, VGS = ØV 1 0.3 Max – 50 V 50 mA 500 mW 4 mW/°C – 65°C to + 200°C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 20 20 µS VDS = – 15V, VGS = ØV Common Source Input Capacitance Ciss 25 25 pF VDS = – 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 7 7 pF VDS = – 15V, VGS = ØV f = 1 MHz 1 3.5 TOÐ18 Package Surface Mount Dimensions in Inches (mm) SMP5020, SMP5021 Pin Configuration 1 Source 1, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-52 B-52 01/99 J174, J175 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J174 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Dynamic Electrical Characteristics J175 Max 30 Min – 30 V 50 mA 360 mW 3.27 mW/°C Process PJ99 Max 30 Unit Test Conditions V IG = 1 µA, VDS = ØV 1 nA VGS = 20V, VDS = ØV 6 V VDS = – 15V, ID = – 10 nA – 20 – 125 – 7 – 70 mA VDS = – 15V, VGS = ØV –1 –1 nA VDS = – 15V, VGS = 10V Ω VGS = Ø, VDS < = 0.1V f = 1 kHz 1 5 10 3 Max Max 85 85 Typ Typ Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz Source Gate Capacitance Cgs 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = ØV f = 1 MHz td(on) 2 5 ns Rise Time tr 5 10 ns Turn OFF Delay Time td(off) 5 10 ns Fall Time tf 10 20 ns Switching Characteristics Turn ON Delay Time VDD VGS(OFF) RL VGS(ON) J174 J175 – 10 12 560 Ø –6 8 1.2 k Ø TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ174, SMPJ175 V V Ω V Pin Configuration 1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-53 B-53 01/99 J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J176 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Max 30 Min Process PJ99 Max 30 1 4 –2 0.8 1 nA VGS = 20V, VDS = ØV 2.25 V VDS = – 15V, ID = – 10 nA – 35 – 1.5 – 20 mA VDS = – 15V, VGS = ØV –1 nA VDS = – 15V, VGS = 10V Ω VGS = Ø, VDS < = 0.1V f = 1 kHz –1 Max 250 300 Typ Typ Dynamic Electrical Characteristics Test Conditions IG = 1 µA, VDS = ØV Max rds(on) Unit V 1 Dynamic Electrical Characteristics Drain Source ON Resistance J177 – 30 V 50 mA 360 mW 3.27 mW/°C Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz Source Gate Capacitance Cgs 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = ØV f = 1 MHz td(on) 15 20 ns Rise Time tr 20 25 ns Turn OFF Delay Time td(off) 15 20 ns Fall Time tf 20 25 ns Switching Characteristics Turn ON Delay Time TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ176, SMPJ177 VDD VGS(OFF) RL VGS(ON) J176 J177 –6 6 5.6 k Ø –6 3 10 k Ø V V Ω V Pin Configuration 1 Drain, 2 Gate, 3 Source www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 11:31 AM Page B-19 B-19 01/99 2N5114, 2N5115, 2N5116 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range 2N5114 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Max 30 2N5115 Min Max 30 500 1 10 – 30 – 90 Min 1 3 6 –1 1 –1 – 15 – 60 Unit V IG = – 1µA, VDS = ØV 500 pA VGS = 20V, VDS = ØV 1 µA VGS = 20V, VDS = ØV 4 V VDS = – 15V, IG = – 1 nA –1 –5 – 25 – 500 –1 Drain Cutoff Current – 500 ID(OFF) –1 VDS(ON) Test Conditions V VDS = ØV, IG = – 1 mA mA VGS = ØV, VDS = – 18V mA VGS = ØV, VDS = – 15V pA VDS = – 15V, VGS = 12 V µA VDS = – 15V, VGS = 12 V pA VDS = – 15V, VGS = 7V µA VDS = – 15V, VGS = 7V – 500 pA VDS = – 15V, VGS = 5V –1 µA VDS = – 15V, VGS = 5V V VGS = ØV, ID = – 15 mA – 1.3 Drain Source ON Voltage Process PJ99 Max 30 500 5 2N5116 – 40 V 50 mA 500mW 3 mW/°C – 65°C to + 200°C – 0.8 V VGS = ØV, ID = – 7 mA – 0.6 V VGS = ØV, ID = – 3 mA TA = 150°C TA = 150°C TA = 150°C TA = 150°C rDS(ON) 75 100 150 Ω VGS = ØV, ID = – 1 mA Drain Source ON Resistance rds(on) 75 100 150 Ω VGS = ØV, ID = ØA f = 1 kHz Common Source Input Capacitance Ciss 25 25 27 pF VDS =– 15V, VGS = ØV f = 1 MHz pF VDS = ØV, VGS = 12V f = 1 MHz pF VDS = ØV, VGS = 7 V f = 1 MHz pF VDS = ØV, VGS = 5V f = 1 MHz VDD VGG RL RG ID(ON) Static Drain Source ON Resistance Dynamic Electrical Characteristics 7 Common Source Reverse Transfer Capacitance Crss 7 7 Switching Characteristics 2N5114 2N5115 2N5116 Turn ON Delay Time td(on) 6 10 25 ns Rise Time tr 10 20 35 ns Turn OFF Delay Time td(off) 6 8 20 ns Fall Time tf 15 30 60 ns TOÐ18 Package Pin Configuration See Section G for Outline Dimensions 1 Source 1, 2 Gate & Case, 3 Drain www.interfet.com – 10 20 130 100 – 15 –6 12 910 220 –7 –6 8 2000 390 –3 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 V V Ω Ω mA Databook.fxp 1/13/99 2:09 PM Page G-2 G-2 01/99 TO-18 Package Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.100 (2.54) - Dia. Typ. 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 3 2 0.048 (1.22) 0.028 (0.71) 1 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 45° 0.046 (1.17) 0.036 (0.91) Bottom View TO-39 Package Dimensions in Inches (mm) Alternate (Preferred) version cap height = Max 0.185 (4.70), Min 0.165 (4.19) 0.260 (6.60) 0.240 (6.10) 0.370 (9.40) 0.335 (8.51) 0.350 (8.89) 0.315 (8.00) Dia. Dia. 0.125 (3.18) Max. 0.009 (0.23) Min. 0.750 (19.05) Max. 0.500 (12.70) Min 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 3 0.210 (5.34) Dia. 0.190 (4.82) Dia. 2 0.050 (1.14) 0.029 (0.74) 1 45° 0.034 (0.86) 0.028 (0.71) Bottom View www.interfet.com Databook.fxp 1/13/99 2:09 PM Page G-3 G-3 01/99 TO-46 Package Dimensions in Inches (mm) 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) - Dia. Typ. 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 3 2 0.048 (1.22) 0.028 (0.71) 1 0.040 (1.02) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 45° 0.046 (1.17) 0.036 (0.914) Bottom View TO-52 Package Dimensions in Inches (mm) 0.150 (3.81) 0.115 (2.92) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min www.interfet.com 0.100 (2.54) - Dia. Typ. 3 Leads - Dia. 0.019 (0.48) 0.016 (0.41) 3 2 0.048 (1.22) 0.028 (0.71) 1 45° 0.046 (1.17) 0.036 (0.91) Bottom View 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page G-7 G-7 01/99 TO-236AB Package (SOT-23) Dimensions in Inches (mm) 0.021 (0.54) 0.015 (0.38) 3 0.010 (0.25) 0.005 (0.13) 0.0059 (0.15) 0.0035 (0.089) 8° 0.098 (2.64) 0.055 (1.40) 0.083 (2.10) 0.047 (1.20) 1 0.022 (0.55) 0.017 (0.44) 0.120 (3.05) 0.105 (2.67) 2 0.079 (2.00) 0.071 (1.80) 0.040 (1.02) 0.031 (0.79) 0.004 (0.10) 0.001 (0.02) 0.041 (1.12) 0.035 (0.89) SOIC-8 Package Dimensions in Inches (mm) 8 7 6 5 0.158 (4.01) 0.244 (6.20) 0.150 (3.81) 0.228 (5.79) 1 2 3 4 0.050 (1.27) 0.022 (0.56) 0.018 (0.046 0.018 (0.46 0.014 (0.36) 0.059 (1.50) 0.049 (1.24) 0.197 (5.00) 0.188 (4.78) www.interfet.com 0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35) 45° 0.009 (0.23) 0.007 (0.18) 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page G-6 G-6 01/99 TO-226AA Package (TO-92) Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min. Bottom View 0.022 (0.55) 0.014 (0.36) Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min. 0.105 (2.66) 0.095 (2.42) TO-226AB Package (TO-92/18) Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 3 Leads 0.022 (0.55) 0.014 (0.36) 3 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min. 0.052 (1.33) 0.047 (1.21) 2 1 Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min. 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 0.022 (0.55) 0.014 (0.36) 0.105 (2.66) 0.095 (2.42) Bottom View www.interfet.com