RHOPOINT 2N4391

Databook.fxp 1/14/99 11:30 AM Page B-13
B-13
01/99
2N4391, 2N4392, 2N4393
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Low On Resistance Analog
Switches
¥ Choppers
¥ Commutators
2N4391
At 25°C free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage
Min
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Gate Source Forward Voltage
VGS(F)
Drain Saturation Current (Pulsed)
IDSS
Drain Cutoff Current
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Max
– 40
2N4392
Min
Max
– 40
– 100
2N4393
Min
– 200
Unit
Test Conditions
V
IG = – 1µA, VDS = ØV
– 100
pA
VGS = – 20V, VDS = ØV
– 200
nA
VGS = – 20V, VDS = ØV
– 0.5
–3
V
VDS = – 20V, ID = 1 nA
1
V
IG = 1 mA, VDS = ØV
5
30
mA
VDS = 20V, VGS = ØV
100
pA
VDS = 20V, VGS = – 5V
200
nA
VDS = 20V, VGS = – 5V
100
pA
VDS = 20V, VGS = – 7V
200
nA
VDS = 20V, VGS = – 7V
100
pA
VDS = 20V, VGS = – 12V
200
nA
VDS = 20V, VGS = – 12V
V
VGS = ØV, ID = 3 mA
V
VGS = ØV, ID = 6 mA
V
VGS = ØV, ID = 12 mA
Ω
VGS = ØV, ID = 1 mA
–4
– 10
50
150
– 200
Process NJ132
Max
– 40
– 100
– 40 V
50 mA
1.8 W
12 mW/°C
–2
–5
25
75
1
1
ID(OFF)
0.4
Drain Source ON Voltage
VDS(ON)
0.4
Static Drain Source ON Resistance
rDS(ON)
30
Drain Source ON Resistance
rds(on)
Common Source Input Capacitance
Ciss
Common Source Reverse
Transfer Capacitance
Crss
0.4
TA = 150°C
TA = 150°C
TA = 150°C
TA = 150°C
60
100
30
60
100
Ω
VGS = ØV, ID = ØA
f = 1 kHz
14
14
14
pF
VDS = 20V, VGS = ØV
f = 1 kHz
3.5
pF
VDS = ØV, VGS = – 5V
f = 1 kHz
pF
VDS = ØV, VGS = – 7V
f = 1 kHz
pF
VDS = ØV, VGS = – 12V
f = 1 kHz
ns
VDD = 10V, VGS(ON) = ØV
Dynamic Electrical Characteristics
3.5
3.5
Switching Characteristics
Turn ON Delay Time
td(on)
15
Rise Time
tr
5
5
5
ns
Turn OFF Delay Time
td(off)
20
35
50
ns
ID(ON)
12
6
3
Fall Time
tf
15
20
30
ns
VGS(OFF) – 12
–7
–5
TOÐ18 Package
Surface Mount
See Section G for Outline Dimensions
SMP4391, SMP4392, SMP4393
15
15
2N4391 2N4392 2N4393
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
mA
V
Databook.fxp 1/14/99 11:30 AM Page B-15
B-15
01/99
2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
2N4856, 2N4857, 2N4858
– 40 V
– 40 V
1.8 W
10 mW/°C
50 mA
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Device Dissipation
Power Derating
Continuous Forward Gate Current
2N4856
2N4859
At 25°C free air temperature:
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
V(BR)GSS
Gate Reverse Current
2N4856, 2N4857, 2N4858
IGSS
Gate Reverse Current
2N4859, 2N4860, 2N4861
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
–4
Drain Saturation Current (Pulsed)
IDSS
50
Drain Cutoff Current
ID(OFF)
Drain Source ON Voltage
VDS(ON)
Max
2N4857
2N4860
Min
Max
2N4858
2N4861
Min
2N4859, 2N4860, 2N4861
– 30 V
– 30 V
1.8 W
10 mW/°C
50 mA
Process NJ132
Max
Unit
Test Conditions
– 40
– 40
– 40
V
IG = – 1 µA, VDS = ØV
– 30
– 30
– 30
V
IG = – 1 µA, VDS = ØV
– 250
– 250
– 250
pA
VGS = – 20V, VDS = ØV
– 500
– 500
– 500
nA
VGS = – 20V, VDS = ØV
– 250
– 250
– 250
pA
VGS = – 15V, VDS = ØV
– 500
– 500
– 500
nA
VGS = – 15V, VDS = ØV
– 10
–2
–6
– 0.8
–4
V
VDS = 15V, ID = 0.5 nA
20
100
8
80
mA
VDS = 15V, VGS = ØV
250
250
250
pA
VDS = 15V, VGS = – 10V
500
500
500
nA
VDS = 15V, VGS = – 10V
0.75
(20)
0.5
(10)
0.5
(5)
V
(mA)
TA = 150°C
TA = 150°C
TA = 150°C
VGS = ØV, ID = ( )
Dynamic Electrical Characteristics
Common Source ON Resistance
rds(on)
25
40
60
Ω
VGS = ØV, ID = Ø A
f = 1 kHz
Common Source Input Capacitance
Ciss
18
18
18
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Common Source Reverse
Transfer Capacitance
Crss
8
8
8
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
td(on)
6
(20)
[–10]
6
(10)
[– 6]
10
(5)
[– 4]
ns
(mA)
[V]
tr
3
(20)
[–10]
4
(10)
[– 6]
10
(5)
[– 4]
ns
(mA)
[V]
td(off)
25
(20)
[–10]
50
(10)
[– 6]
100
(5)
[– 4]
ns
(mA)
[V]
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
TOÐ18 Package
Surface Mount
See Section G for Outline Dimensions
SMP4856, SMP4857, SMP4858,
SMP4859, SMP4860, SMP4861
Pin Configuration
VDD = 10V, VGS = ØV
ID(ON) = ( )
VGS(OFF) = [ ]
(2N4856, 2N4859) RL = 465Ω
(2N4857, 2N4860) RL = 953Ω
(2N4858, 2N4861) RL = 1910Ω
1 Source, 2 Drain, 3 Gate &Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-45
B-45
01/99
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Analog Low On Resistance
Switches
¥ Choppers
IFN5432
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Min
V(BR)GSS
– 25
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
–4
Drain Saturation Current (Pulsed)
IDSS
150
ID(OFF)
Drain Source ON Voltage
VDS
Static Drain Source ON Resistance
rDS(ON)
Min
– 10
IFN5434
Min
– 200
–3
–9
100
–1
Process NJ903
Max
Unit
V
IG = – 1µA, VDS = ØV
– 200
pA
VGS = – 15V, VDS = ØV
– 200
nA
VGS = – 15V, VDS = ØV
–4
V
VDS = 5V, IG = 3 nA
– 25
– 200
– 200
2
Max
– 25
– 200
Gate Reverse Current
Drain Cutoff Current
Max
IFN5433
– 25 V
100 mA
300 mW
2.4 mW/°C
30
Test Conditions
mA
VDS = 15V, VGS = ØV
pA
VDS = 5V, VGS = – 10V
200
nA
VDS = 5V, VGS = – 10V
100
mV
VGS = ØV, ID = 10 mA
7
10
Ω
VDS = ØV, ID = 10 mA
200
200
200
200
200
50
70
5
TA = 150°C
TA = 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
5
7
10
Ω
VGS = ØV, ID = ØA
f = 1 kHz
Common Source Input Capacitance
Ciss
60
60
60
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Common Source Reverse
Transfer Capacitance
Crss
20
20
20
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Turn ON Delay Time
td(on)
4
4
4
ns
Rise Time
tr
1
1
1
ns
Turn OFF Delay Time
td(off)
6
6
6
ns
Fall Time
tf
30
30
30
ns
VDD = 1.5 V, VGS(ON) = ØV
VGS(OFF) = – 12V, ID(ON) = 10 mA
(IFN5432) RL = 145 Ω
(IFN5433) RL = 143 Ω
(IFN5433) RL = 140 Ω
Switching Characteristics
TOÐ52 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/14/99 1:02 PM Page B-49
B-49
01/99
J108, J109
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
J108
Static Electrical Characteristics
Min
J109
Max
Gate Source Breakdown Voltage
V(BR)GSS
– 25
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
–3
Drain Saturation Current (Pulsed)
IDSS
80
Drain Cutoff Current
ID(OFF)
3
Drain Source ON Resistance
rds(on)
Drain Gate Capacitance
Min
Process NJ450
Max
– 25
–3
– 10
–2
– 25 V
50 mA
360 mW
3.27 mW/°C
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
–3
nA
VGS = – 15V, VDS = ØV
–6
V
VDS = 5V, ID = 1 µA
40
mA
VDS = 15V, VGS = ØV
3
nA
VDS = 5V, VGS = – 10V
8
12
Ω
VGS = Ø, VDS < = 0.1V
f = 1 kHz
Cgd
15
15
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Source Gate Capacitance
Cgs
15
15
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Drain Gate + Source Gate Capacitance
Cgd + Cgs
85
85
pF
VDS = VGS = ØV
f = 1 MHz
Dynamic Electrical Characteristics
Switching Characteristics
Typ
Typ
Turn ON Delay Time
td(on)
3
3
ns
Rise Time
tr
1
1
ns
Turn OFF Delay Time
td(off)
4
4
ns
Fall Time
tf
18
18
ns
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ108, SMPJ109
VDD
VGS(OFF)
RL
J108
J109
1.5
– 12
150
1.5
–7
150
V
V
Ω
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-50
B-50
01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
J110
Static Electrical Characteristics
Min
J110A
Max
Gate Source Breakdown Voltage
V(BR)GSS
– 25
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Drain Cutoff Current
ID(OFF)
3
Drain Source ON Resistance
rds(on)
Drain Gate Capacitance
Min
Max
– 25
–3
– 0.5
–4
10
– 0.5
Process NJ450
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
–3
nA
VGS = – 15V, VDS = ØV
–4
V
VDS = 5V, ID = 1 µA
10
– 25 V
50 mA
360 mW
3.27 mW/°C
mA
VDS = 15V, VGS = ØV
3
nA
VDS = 5V, VGS = – 10V
18
25
Ω
VGS = Ø, VDS < = 0.1V
f = 1 kHz
Cgd
15
15
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Source Gate Capacitance
Cgs
15
15
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Drain Gate + Source Gate Capacitance
Cgd + Cgs
85
85
pF
VDS = VGS = ØV
f = 1 MHz
Dynamic Electrical Characteristics
Switching Characteristics
Typ
Typ
Turn ON Delay Time
td(on)
4
4
ns
Rise Time
tr
1
1
ns
Turn OFF Delay Time
td(off)
6
6
ns
Fall Time
tf
30
30
ns
VDD
VGS(OFF)
RL
J110
J110A
1.5
–5
150
1.5
–5
150
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ110, SMPJ110A
V
V
Ω
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-51
B-51
01/99
J111, J112, J113
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
J111
At 25°C free air temperature
Static Electrical Characteristics
Min
J112
Max
– 35
Min
J113
Max
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
– 35
Gate Source Cutoff Voltage
VGS(OFF)
–3
Drain Saturation Current (Pulsed)
IDSS
20
Drain Cutoff Current
ID(OFF)
–1
–1
rds(on)
30
Drain Gate Capacitance
Cdg
Source Gate Capacitance
Cgs
Drain Gate + Source Gate Capacitance
Cgd + Cgs
Process NJ132
Max
Unit
V
IG = – 1µA, VDS = ØV
–1
nA
VGS = – 15V, VDS = ØV
V
VDS = 5V, ID = 1 µA
– 35
–1
– 10
Min
–1
–1
–5
5
– 35 V
50 mA
360 mW
3.27 mW/°C
–3
2
Test Conditions
mA
VDS = 15V, VGS = ØV
–1
nA
VDS = 15V, VGS = – 10V
50
100
Ω
VGS = ØV, VDS = 0.1V
f = 1 kHz
5
5
5
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
5
5
5
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
28
28
28
pF
VDS = VGS = ØV
f = 1 MHz
ns
J111
Dynamic Electrical Characteristics
Drain Source ON Resistance
Switching Characteristics
Typ
Typ
Typ
7
7
7
Turn ON Delay Time
td(on)
Rise Time
tr
6
6
2
ns
VDD
10
10
10
V
Turn OFF Delay Time
td(off)
20
20
20
ns
VGS(OFF)
– 12
–7
–5
V
Fall Time
tf
15
15
15
ns
RL
800
1600
3200
Ω
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ111, SMPJ112, SMPJ113
J112
J113
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-18
B-18
01/99
2N5020, 2N5021
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
At 25°C free air temperature:
2N5020
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GDO
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Max
25
2N5021
Min
Process PJ32
Unit
25
1.5
– 0.3 – 1.2
Test Conditions
V
IG = 1µA, VDS = ØV
1
nA
VGS = 15V, VDS = ØV
0.5
2.5
V
VDS = – 15V, ID = 1 nA
–1
– 3.5
mA
VDS = – 15V, VGS = ØV
1.5
6
mS
VDS = – 15V, VGS = ØV
1
0.3
Max
– 50 V
50 mA
500 mW
4 mW/°C
– 65°C to + 200°C
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
gfs
Common Source Output Conductance
gos
20
20
µS
VDS = – 15V, VGS = ØV
Common Source Input Capacitance
Ciss
25
25
pF
VDS = – 15V, VGS = ØV
f = 1 MHz
Common Source
Reverse Transfer Capacitance
Crss
7
7
pF
VDS = – 15V, VGS = ØV
f = 1 MHz
1
3.5
TOÐ18 Package
Surface Mount
Dimensions in Inches (mm)
SMP5020, SMP5021
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-52
B-52
01/99
J174, J175
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
J174
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Drain Cutoff Current
ID(OFF)
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
Dynamic Electrical Characteristics
J175
Max
30
Min
– 30 V
50 mA
360 mW
3.27 mW/°C
Process PJ99
Max
30
Unit
Test Conditions
V
IG = 1 µA, VDS = ØV
1
nA
VGS = 20V, VDS = ØV
6
V
VDS = – 15V, ID = – 10 nA
– 20 – 125 – 7
– 70
mA
VDS = – 15V, VGS = ØV
–1
–1
nA
VDS = – 15V, VGS = 10V
Ω
VGS = Ø, VDS < = 0.1V
f = 1 kHz
1
5
10
3
Max
Max
85
85
Typ
Typ
Drain Gate Capacitance
Cgd
5.5
5.5
pF
VDS = ØV, VGS = 10V
f = 1 MHz
Source Gate Capacitance
Cgs
5.5
5.5
pF
VDS = ØV, VGS = 10V
f = 1 MHz
Drain Gate + Source Gate Capacitance
Cgd + Cgs
32
32
pF
VDS = VGS = ØV
f = 1 MHz
td(on)
2
5
ns
Rise Time
tr
5
10
ns
Turn OFF Delay Time
td(off)
5
10
ns
Fall Time
tf
10
20
ns
Switching Characteristics
Turn ON Delay Time
VDD
VGS(OFF)
RL
VGS(ON)
J174
J175
– 10
12
560
Ø
–6
8
1.2 k
Ø
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ174, SMPJ175
V
V
Ω
V
Pin Configuration
1 Drain, 2 Gate, 3 Source
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-53
B-53
01/99
J176, J177
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Choppers
¥ Commutators
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
J176
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Drain Cutoff Current
ID(OFF)
Max
30
Min
Process PJ99
Max
30
1
4
–2
0.8
1
nA
VGS = 20V, VDS = ØV
2.25
V
VDS = – 15V, ID = – 10 nA
– 35 – 1.5 – 20
mA
VDS = – 15V, VGS = ØV
–1
nA
VDS = – 15V, VGS = 10V
Ω
VGS = Ø, VDS < = 0.1V
f = 1 kHz
–1
Max
250
300
Typ
Typ
Dynamic Electrical Characteristics
Test Conditions
IG = 1 µA, VDS = ØV
Max
rds(on)
Unit
V
1
Dynamic Electrical Characteristics
Drain Source ON Resistance
J177
– 30 V
50 mA
360 mW
3.27 mW/°C
Drain Gate Capacitance
Cgd
5.5
5.5
pF
VDS = ØV, VGS = 10V
f = 1 MHz
Source Gate Capacitance
Cgs
5.5
5.5
pF
VDS = ØV, VGS = 10V
f = 1 MHz
Drain Gate + Source Gate Capacitance
Cgd + Cgs
32
32
pF
VDS = VGS = ØV
f = 1 MHz
td(on)
15
20
ns
Rise Time
tr
20
25
ns
Turn OFF Delay Time
td(off)
15
20
ns
Fall Time
tf
20
25
ns
Switching Characteristics
Turn ON Delay Time
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ176, SMPJ177
VDD
VGS(OFF)
RL
VGS(ON)
J176
J177
–6
6
5.6 k
Ø
–6
3
10 k
Ø
V
V
Ω
V
Pin Configuration
1 Drain, 2 Gate, 3 Source
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/14/99 11:31 AM Page B-19
B-19
01/99
2N5114, 2N5115, 2N5116
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
2N5114
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Min
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Gate Source Forward Voltage
VGS(F)
Drain Saturation Current (Pulsed)
IDSS
Max
30
2N5115
Min
Max
30
500
1
10
– 30
– 90
Min
1
3
6
–1
1
–1
– 15
– 60
Unit
V
IG = – 1µA, VDS = ØV
500
pA
VGS = 20V, VDS = ØV
1
µA
VGS = 20V, VDS = ØV
4
V
VDS = – 15V, IG = – 1 nA
–1
–5
– 25
– 500
–1
Drain Cutoff Current
– 500
ID(OFF)
–1
VDS(ON)
Test Conditions
V
VDS = ØV, IG = – 1 mA
mA
VGS = ØV, VDS = – 18V
mA
VGS = ØV, VDS = – 15V
pA
VDS = – 15V, VGS = 12 V
µA
VDS = – 15V, VGS = 12 V
pA
VDS = – 15V, VGS = 7V
µA
VDS = – 15V, VGS = 7V
– 500
pA
VDS = – 15V, VGS = 5V
–1
µA
VDS = – 15V, VGS = 5V
V
VGS = ØV, ID = – 15 mA
– 1.3
Drain Source ON Voltage
Process PJ99
Max
30
500
5
2N5116
– 40 V
50 mA
500mW
3 mW/°C
– 65°C to + 200°C
– 0.8
V
VGS = ØV, ID = – 7 mA
– 0.6
V
VGS = ØV, ID = – 3 mA
TA = 150°C
TA = 150°C
TA = 150°C
TA = 150°C
rDS(ON)
75
100
150
Ω
VGS = ØV, ID = – 1 mA
Drain Source ON Resistance
rds(on)
75
100
150
Ω
VGS = ØV, ID = ØA
f = 1 kHz
Common Source Input Capacitance
Ciss
25
25
27
pF
VDS =– 15V, VGS = ØV
f = 1 MHz
pF
VDS = ØV, VGS = 12V
f = 1 MHz
pF
VDS = ØV, VGS = 7 V
f = 1 MHz
pF
VDS = ØV, VGS = 5V
f = 1 MHz
VDD
VGG
RL
RG
ID(ON)
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
7
Common Source Reverse
Transfer Capacitance
Crss
7
7
Switching Characteristics
2N5114 2N5115 2N5116
Turn ON Delay Time
td(on)
6
10
25
ns
Rise Time
tr
10
20
35
ns
Turn OFF Delay Time
td(off)
6
8
20
ns
Fall Time
tf
15
30
60
ns
TOÐ18 Package
Pin Configuration
See Section G for Outline Dimensions
1 Source 1, 2 Gate & Case, 3 Drain
www.interfet.com
– 10
20
130
100
– 15
–6
12
910
220
–7
–6
8
2000
390
–3
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
V
V
Ω
Ω
mA
Databook.fxp 1/13/99 2:09 PM Page G-2
G-2
01/99
TO-18 Package
Dimensions in Inches (mm)
0.210 (5.33)
0.170 (4.32)
0.100 (2.54) - Dia. Typ.
3 Leads - Dia.
0.021 (0.53)
0.016 (0.41)
0.230 (5.84) 0.195 (4.95)
0.209 (5.31) 0.178 (4.52)
Dia.
Dia.
3
2
0.048 (1.22)
0.028 (0.71)
1
0.030 (0.76) Max.
0.750 (19.05) Max.
0.500 (12.70) Min
45°
0.046 (1.17)
0.036 (0.91)
Bottom View
TO-39 Package
Dimensions in Inches (mm)
Alternate (Preferred)
version cap height =
Max 0.185 (4.70),
Min 0.165 (4.19)
0.260 (6.60)
0.240 (6.10)
0.370 (9.40) 0.335 (8.51)
0.350 (8.89) 0.315 (8.00)
Dia.
Dia.
0.125 (3.18) Max.
0.009 (0.23) Min.
0.750 (19.05) Max.
0.500 (12.70) Min
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
3 Leads - Dia.
0.021 (0.53)
0.016 (0.41)
3
0.210 (5.34) Dia.
0.190 (4.82) Dia.
2
0.050 (1.14)
0.029 (0.74)
1
45°
0.034 (0.86)
0.028 (0.71)
Bottom View
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page G-3
G-3
01/99
TO-46 Package
Dimensions in Inches (mm)
0.085 (2.16)
0.065 (1.65)
0.100 (2.54) - Dia. Typ.
3 Leads - Dia.
0.021 (0.53)
0.016 (0.41)
0.230 (5.84) 0.195 (4.95)
0.209 (5.31) 0.178 (4.52)
Dia.
Dia.
3
2
0.048 (1.22)
0.028 (0.71)
1
0.040 (1.02) Max.
0.750 (19.05) Max.
0.500 (12.70) Min
45°
0.046 (1.17)
0.036 (0.914)
Bottom View
TO-52 Package
Dimensions in Inches (mm)
0.150 (3.81)
0.115 (2.92)
0.230 (5.84) 0.195 (4.95)
0.209 (5.31) 0.178 (4.52)
Dia.
Dia.
0.030 (0.76) Max.
0.750 (19.05) Max.
0.500 (12.70) Min
www.interfet.com
0.100 (2.54) - Dia. Typ.
3 Leads - Dia.
0.019 (0.48)
0.016 (0.41)
3
2
0.048 (1.22)
0.028 (0.71)
1
45°
0.046 (1.17)
0.036 (0.91)
Bottom View
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page G-7
G-7
01/99
TO-236AB Package (SOT-23)
Dimensions in Inches (mm)
0.021 (0.54)
0.015 (0.38)
3
0.010 (0.25)
0.005 (0.13)
0.0059 (0.15)
0.0035 (0.089)
8°
0.098 (2.64) 0.055 (1.40)
0.083 (2.10) 0.047 (1.20)
1
0.022 (0.55)
0.017 (0.44)
0.120 (3.05)
0.105 (2.67)
2
0.079 (2.00)
0.071 (1.80)
0.040 (1.02)
0.031 (0.79)
0.004 (0.10)
0.001 (0.02)
0.041 (1.12)
0.035 (0.89)
SOIC-8 Package
Dimensions in Inches (mm)
8 7 6 5
0.158 (4.01) 0.244 (6.20)
0.150 (3.81) 0.228 (5.79)
1 2 3 4
0.050 (1.27)
0.022 (0.56)
0.018 (0.046
0.018 (0.46
0.014 (0.36)
0.059 (1.50)
0.049 (1.24)
0.197 (5.00)
0.188 (4.78)
www.interfet.com
0.015 (0.37)
Min.
0.069 (1.75)
0.053 (1.35)
45°
0.009 (0.23)
0.007 (0.18)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page G-6
G-6
01/99
TO-226AA Package (TO-92)
Dimensions in Inches (mm)
0.210 (5.33)
0.170 (4.32)
0.165 (4.19)
0.125 (3.18)
0.115 (2.66)
0.080 (2.04)
3 Leads
0.022 (0.55)
0.014 (0.36)
3
2
1
0.205 (5.20) 0.135 (3.43)
0.175 (4.45)
Min.
Bottom View
0.022 (0.55)
0.014 (0.36)
Seating Plane
0.750 (19.05) Max.
0.500 (12.70) Min.
0.105 (2.66)
0.095 (2.42)
TO-226AB Package (TO-92/18)
Dimensions in Inches (mm)
0.210 (5.33)
0.170 (4.32)
3 Leads
0.022 (0.55)
0.014 (0.36)
3
0.205 (5.20) 0.135 (3.43)
0.175 (4.45)
Min.
0.052 (1.33)
0.047 (1.21)
2
1
Seating Plane
0.750 (19.05) Max.
0.500 (12.70) Min.
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
0.165 (4.19)
0.125 (3.18)
0.115 (2.66)
0.080 (2.04)
0.022 (0.55)
0.014 (0.36)
0.105 (2.66)
0.095 (2.42) Bottom View
www.interfet.com