Databook.fxp 1/14/99 11:33 AM Page B-67 B-67 01/99 U310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: U310 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ – 25 V 20 mA 500 mW 4 mW/°C Process NJ72L Max – 25 Unit Test Conditions V IG = – 1 µA, VDS = ØV – 150 pA VGS = – 15V, VDS = ØV – 150 nA VGS = – 15V, VDS = ØV –6 V VDS = 10V, ID = 1 nA 1 V VDS = ØV, IG = 10 mA 60 mA VDS = 10V, VGS = ØV 17 mS VDS = 10V, ID = 10 mA f = 1 kHz 15 mS VDS = 10V, ID = 10 mA f = 105 MHz 14 mS VDS = 10V, ID = 10 mA f = 450 MHz µS VDS = 10V, ID = 10 mA f = 1 kHz 0.18 µS VDS = 10V, ID = 10 mA f = 105 MHz 0.32 µS VDS = 10V, ID = 10 mA f = 450 MHz – 2.5 24 TA = 125°C Dynamic Electrical Characteristics 10 Common Gate Forward Transconductance gfg 250 Common Gate Output Conductance gog Drain Gate Capacitance Cdg 2.5 pF VDS = 10V, VGS = – 10V f = 1 MHz Gate Source Capacitance Cgs 5 pF VDS = 10V, VGS = – 10V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N Common Gate Power Gain Gpg Noise Figure NF 10 nV/√Hz VDS = 10V, ID = 10 mA f = 100 Hz 14 16 dB VDS = 10V, ID = 10 mA f = 105 MHz 10 11 dB VDS = 10V, ID = 10 mA f = 450 MHz TOÐ52 Package Surface Mount See Section G for Outline Dimensions SMPJ310 1.5 2 dB VDS = 10V, ID = 10 mA f = 105 MHz 2.7 3.5 dB VDS = 10V, ID = 10 mA f = 450 MHz Pin Configuration 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375