Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators At 25°C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C) 2N4338 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS – 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4339 Min Max – 50 – 50 V 50 mA 300 mW 2mW/°C Process NJ16 Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 – 100 pA VGS = – 30V, VDS = ØV – 100 – 100 nA VGS = – 30V, VDS = ØV – 0.6 – 1.8 V VDS = 15V, ID = 0.1 µA 1.5 mA VDS = 15V, VGS = ØV 0.05 (– 5) 0.05 (– 5) nA V VDS = 15V, VGS = ( ) 2500 1700 Ω VGS = ØV, ID = Ø A f = 1 kHz 600 1800 800 2400 µS VDS = 15V, VGS = ØV f = 1 kHz 15 µS VDS = 15V, VGS = ØV f = 1 kHz 7 7 pF VDS = 15V, VGS = ØV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = ØV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = ØV RG = 1 MΩ, BW = 200 Hz f = 1 kHz – 0.3 –1 0.2 0.6 0.5 TA = 150°C Dynamic Electrical Characteristics TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375