Databook.fxp 1/13/99 2:09 PM Page C-10 C-10 01/99 VCR11N N-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C. Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control VCR11N At 25°C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage Static Drain Source ON Resistance Ratio Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 15 V 10 mA 300 mW 2.4 mW/°C Process NJ26 Max Unit V IG = – 1 µA, VDS = ØV – 0.2 nA VGS = – 15V, VDS = ØV V – 25 Test Conditions VGS(OFF) –8 – 12 rDS(MIN) .95 1 VDS = 100 mV, rDS1 = 200Ω ID = 1 µA, VDS = – 10V rDS(MAX) .95 1 VGS1 = VGS2, rDS1 = 2 kΩ rds(on) 70 200 Ω VGS = ØV, ID = ØA f = 1 kHz Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Cdg 7.5 pF VDG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance Csg 7.5 pF VGS = 10V, ID = ØA f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TOÐ71 Package Pin Configuration Dimensions in Inches (mm) 1 Source , 2 Drain 1, 3 Gate 1, 5 Source 2, 6 Drain 2, 7 Gate 2 www.interfet.com