MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode (FRED) Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 1 MEE 95-06 DA 3 Symbol IFSM 1 2 3 Maximum Ratings A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 142 95 TBD 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1080 1170 A A TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5800 5700 A2s A2s -40...+150 -40...+125 110 °C °C °C 280 W 3000 3600 V~ V~ TVJ = 45°C; 3 TO-240 AA Type 1 VRRM = 600 V IFAV = 95 A trr = 250 ns Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 ● ● I2t TVJ Tstg THmax Ptot Tcase = 25°C VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Md Mounting torque (M5) Terminal connection torque (M5) dS dA a Creep distance on surface Strike distance through air Maximum allowable acceleration 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 12.7 9.6 50 90 Weight mm mm m/s2 g ● ● ● ● ● Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● ● ● ● ● Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses ● ● ● Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM VF IF = 100 A; TVJ TVJ TVJ TVJ IF = 300 A; Characteristic Values (per diode) typ. max. 2 0.5 34 = 125°C = 25°C = 125°C = 25°C VT0 rT For power-loss calculations only TVJ = 125°C RthJH RthJC DC current DC current trr IRM IF = 100 A VR = 300 V -di/dt = 200 A/ms TVJ = 100°C TVJ = 25°C TVJ = 100°C 250 ① IFAV rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved mA mA mA 1.36 1.55 2.05 2.09 V V V V 1.01 2.85 V mW 0.550 0.450 K/W K/W 300 14 21 ● Dimensions in mm (1 mm = 0.0394") ns A A 749 Symbol 1-2 MEA 95-06 DA MEE 95-06 DA MEK 95-06 DA IF 200 A 175 4 µC 150 Qr 3 60 A TVJ= 100°C VR = 300V 50 TVJ= 100°C VR = 300V IRM IF=190A IF= 95A IF=47.5A 40 125 TVJ=150°C TVJ=100°C TVJ=25°C 100 IF=190A IF= 95A IF=47.5A 2 30 75 20 50 1 10 25 0 0.0 0.5 1.5 V VF 1.0 0 10 2.0 Fig. 1 Forward current IF versus voltage drop VF per leg 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 250 IRM 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.0 TVJ= 100°C IF = 150A 40 VFR IF=190A IF= 95A IF=47.5A 1.0 0 A trr 200 Qr Kf 0 50 TVJ= 100°C VR = 300V ns 1.5 A/ms 1000 -diF/dt µs VFR 0.8 tfr tfr 30 0.6 20 0.4 10 0.2 150 0.5 100 0.0 50 0 50 100 °C 150 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 0 0 200 400 600 800 diF/dt 0.0 1000 A/ms Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0.6 K/W 0.5 0.4 ZthJH Constants for ZthJH calculation: 0.3 i 0.2 1 2 3 4 0.1 0.0 0.001 0.01 0.1 Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 1s Rthi (K/W) ti (s) 0.037 0.138 0.093 0.282 0.002 0.134 0.25 0.274 10 t 2-2